6.151sp02_1


Step Description CAFE name Lab Notes





1 RCA clean rca ICL
2 500A thermal oxide tubeA2 ICL Temp = 950C, 15/7/15min dry/wet/dry O2
3 HMDS HMDS ICL

spin-coat 1.2um photoresist + prebake coater6 ICL

photolithography – mask 0 (alignment marks) EV1 TRL

develop photo-wet-l TRL

postbake postbake TRL
4 BOE (alignment marks) acid-hood2 TRL time = 1min (etch rate ~1000A/min)
5 Etch Si, 5,000A (alignment marks) AME5000 ICL time = 50sec (etch rate ~105A/sec)
6 Ash photoresist asher ICL
7 HMDS HMDS ICL

spin-coat 1.2um photoresist + prebake coater6 ICL

photolithography – mask 1 (p ion implantion) EV1 TRL

develop photo-wet-l TRL

postbake postbake TRL
8 p ion implantation - - Boron, dose = 5e13, energy = 100 keV
9 strip photoresist & clean w/ Piranha (x2) acid-hood2 TRL
10 HMDS HMDS TRL

spin-coat 1.2um photoresist + prebake coater TRL OCG825-20, 6/6/30sec 500/750/1000 RPM

prebake prebakeovn TRL

photolithography – mask 2 (p+ ion implantation) EV1 TRL

develop photo-wet-l TRL

postbake postbake TRL
11 p+ ion implantation - - Boron, dose = 5e15, energy = 100 keV
12 Ash photoresist asher TRL 120min @ 1100W
13 clean w/ Piranha acid-hood2 TRL
14 HMDS HMDS TRL

spin-coat 1.2um photoresist coater TRL OCG825-20, 6/6/30sec 500/750/1000 RPM

prebake prebakeovn TRL

photolithography – mask 3 (n+ ion implantation) EV1 TRL

develop photo-wet-l TRL

postbake postbake TRL
15 n+ ion implantation - - Phosphorus, dose = 5e15, energy = 125 keV
16 Ash photoresist asher TRL 90min @ 1100W
17 clean w/ Piranha acid-hood TRL
18 BOE (thin oxide) acid-hood TRL time = 1min (etch rate ~1000A/min)
19 RCA clean rca ICL
20 10,000A thermal oxide tubeA2 ICL Temp = 1050C, 20/210/20min dry/wet/dry O2
21 HMDS HMDS ICL

spin-coat 1.2um photoresist coater6 ICL

photolithography – mask 4 (oxide contact holes) EV1 TRL

develop photo-wet-l TRL

postbake postbake TRL
22 BOE (thick oxide contact holes) acid-hood TRL time = 11min (etch rate ~1000A/min)
23 strip photoresist with Piranha acid-hood TRL
24 HMDS HMDS TRL

spin-coat 1.2um thin photoresist coater TRL

prebake prebakeovn TRL

photolithography – mask 5 (metal) EV1 TRL

develop photo-wet-l TRL

postbake postbake TRL
25 Ash (to strip organics before metal dep) asher TRL 2-3min
26 evaporate 100A chromium, 4000A gold e-beam-Au TRL
27 strip photoresist & metal liftoff with acetone photo-wet-Au TRL






final version Sat Apr 13 11:03:05 EDT 2002