Course Overview Lecture Schedule Homework	Text Books Laboratory Schedule Laboratory Instruction	Policy for Academic Conduct Student Survey

6.152J / 3.155J

   This course introduces the theory and technology of integrated circuit fabrication. Because of the interdisciplinary nature of the subject, its content includes concepts from electrical engineering, chemical engineering, and materials science. In lecture we will discuss the theory of basic processing techniques, such as diffusion, oxidation, epitaxy, photolithography, chemical vapor deposition, plasma etching, and metallization. We will also cover both electrical and material characterization. (See Lecture Schedule).

     In the laboratory section of this course, we will be fabricating several test structures, including silicon gate PMOS transistors, p-n junction diodes, Van der Pauw devices, and many other structures in which one will be able to observe the interrelationship between material properties, electrical behavior, and the device fabrication techniques.

     At the end of this course one should have a good understanding of the various processing techniques used to fabricate integrated circuits. One should understand the theory of the individual processes, how they are characterized, both electrically and structurally, and the interrelationship of these processes when combined to fabricate integrated circuits.

PREREQUISITES: 6.012, or 6.071, or 3.15

    This course will meet for two 1.5-hour lectures per week (see Lecture Schedule). Laboratory sessions will begin on September 12 and continue until the end of the semester (see Laboratory Schedule). Students will spend approximately one four-hour lab session per week for 9 weeks. At that time, the device structures will have been fabricated and the rest of the lab time will be spent on material and electrical characterization.

    There will be approximately 6 homework sets during the semester. The homework sets will be due as indicated on the Homework page.

    There will be three 90-minute in-class quizzes.

    The final lab report is due at Noon, Thursday, December 14. It will be no more than 15 pages in length and will discuss primarily the electrical and material characterization results and relate those to the actual processing conditions during the fabrication sequence. We will distribute a handout that will describe in more detail the final report.

The following combination of homework sets and exams will determine grades:

HOMEWORK

    There will be six homework assignments consisting of two questions each. The questions will address specific issues in integrated circuit processing from a design approach. The questions should be answered by student teams with one set of solutions submitted by each team. As soon as possible, you should set up a homework team consisting of no more than four students.

     All participating members of the team should sign each completed assignment. Your signature is your bond that you have contributed significantly to the solutions. The homework will be graded on both writing clarity and technical content. Each member of the team should be the final draft author of at least three solutions during the semester. The final draft author should be identified at the beginning of the solution.

     The solution should be approximately 500 words in length (per question) plus data, and should be structured in four sections:

1. Background (problem definition)
2. Constraints (relevant technical issues that you have learned)
3. Recommended solution (with brief mention of the alternatives)
4. Analysis (basis of your choice)

 Additional resources outside of the course curriculum are encouraged.

Problem Set Schedule (tentative) 

                                                        Other Significant Dates:

                                                                9/11         First Day of Lab

                                                                10/6         Add Date

                                                                11/22       Drop Date

                                                                12/14       Lab Report Due

S.A. Campbell, The Science and Engineering of Microelectronic Fabrication,
Oxford University Press, 1996

              Laboratory Manual: http://www-mtl.mit.edu/6152j/6152J.html

S. Wolf, and R. Tauber, Silicon Processing for the VLSI Era, Lattice Press, 1986.

S.K. Ghandi, VLSI Fabrication Principles, 2nd Edition, Wiley, 1994.

S.M. Sze, VLSI Technology, 2nd Edition, McGraw-Hill, 1988.

Pierret/Neudeck, Modular Series on Solid State Devices, Vols. 1-5, Addison-Wesley, 1984.

A.S. Grove, Physics and Technology of Semiconductor Devices, Wiley, 1977.

J.L. Vossen and W. Kern, Thin Film Processes, Academic Press, 1978.

J.W. Mayer and S.S. Lau, Electronic Materials Science: For Integrated Circuits in Si and GaAs, 

Macmillan, 1990.

S.P. Murarka and M.C. Peckerar, Electronic Materials Science and Technology, Academic Press, 1989.

M. Ohring, The Materials Science of Thin Films, Academic Press, 1992.

Lab groups will consist of 6 or fewer students who will meet at 9 assigned times during the semester. The possible times available are numerous, so one should fit your needs. The groups A-F will meet for the day and time periods indicated: