6.777J/2.751J Material Property
Database
Material:
PVD Chromium
Property |
Value |
Reference |
Image/URL (optional) |
|
7.19 g/cc |
Matweb |
|
Young's modulus |
140 GPA |
(Thin
film) IEEE, MicroElectroMechanical Systems
Workshop, Feb 1990, |
|
Poisson ratio |
0.21 |
Goodfellow.com |
|
Stiffness Constants |
0.002 (limiting strain) |
IEEE, MicroElectroMechanical Systems Workshop, Feb 1990, |
|
Tensile or fracture strength |
282 MPa |
Ultimate Tensile Strength (Recrystallized) Matweb |
|
Residual stress on silicon |
Tensile or compressive
depending on normalized energy of deposition |
Hsieh, J.H., et al.
“Effects of
energetic particle bombardment on residual stress, microstrain
and grainsize of plasma-assisted PVD Cr thin
film.” Thin Solid Films. v424.
|
(See Below) |
Specific heat |
0.461 J/g-°C |
Matweb |
|
Thermal conductivity |
69.1 W/m-°K |
Matweb |
|
Dielectric constant |
12 (pure) |
Dielectric Constant Guide |
|
Index of refraction |
2.97 |
http://en.wikipedia.org/wiki/List_of_indices _of_refraction |
|
Electrical conductivity |
7.69 E4 /W-cm |
(@ 20°C) Matweb |
|
Magnetic permeability |
mo(1+cm) |
cm = 3.5e-6 (cgs) Matweb |
|
Piezoresistivity |
|
|
|
Piezoelectricity |
N/A |
N/A |
|
Wet etching method |
Acidic solution of cerric ammonium nitrate |
Buck,
P. and Grenon, B.
“A comparison of wet and dry chrome etching with the CORE-2564.” Proceedings of the SPIE – The
International Society for Optical Engineering. v2087, 1994, p42-49. |
|
Plasma etching method |
Electron beam irradiation
enhanced with XeF2 gas |
Wang, Jianhua, et al.
“Etching characteristics of chromium thin films by an electron beam
induced-surface reaction.” Semiconductor
Science and Technology. v18, April
2003, p199-205. |
|
Adhesion to silicon dioxide |
|
|
|
Biocompatibility |
Toxic (unless coated) |
http://periodic.lanl.gov/elements/24.html |
|
Hydrophobicity |
Contact Angle between 20 °– 60° |
Kuze, Eiji, et al. “Contact angle of water on chromium nitride
thin film prepared on three dimensional materials by chromium plasma-based
ion implantation.” Surface Coatings
and Technology. v158-159. September
2002, pp577-581. |
|
Melting Point |
1860°C |
Matweb |
|
CTE |
6.2 mm/m-°C |
(over a range of 20°C – 100°C) Matweb |
|
Residual
stress on silicon: