6.777J/2.751J Material Property Database

Material: Copper – PVD or Electroplated

Property	Value	Reference	Image/URL (optional)
Mass density	8960 kg/m^3	CRC Handbook of Chemistry and Physics (2003-2004)
Young's modulus	130 Gpa	L.B. Freund, S. Suresh. Thin Film Materials: Stress, Defect Formation, and Surface Evolution (2003)
Poisson ratio	0.34	L.B. Freund, S. Suresh. Thin Film Materials: Stress, Defect Formation, and Surface Evolution (2003)
Stiffness Constants	C11 = 168.3 Gpa, C12 = 1.221 Gpa, C44 = 0.757 Gpa	CRC Handbook of Chemistry and Physics (2003-2004)
Tensile or fracture strength	193 Mpa [1] – 262 Mpa [2]	[1] J.W. Dini, Electrodeposition – The Materials Science of Coatings and Substrates [2] D. Read, J. Dally, “Mechanical Behavior of Aluminum and Copper Thin Films.” In Mechanics and Materials for Electronic Packaging: Vol. 2 (1994), ASME
Residual stress on silicon	0 – 400 Mpa	H.M. Choi, S.K. Choi et. al. “Influence of film density on residual stress and resistivity for Cu thin films deposited by bias sputtering.” Thin Solid Films 358 (2000) 202-205.
Specific heat	385 J/kg*K (@ 300 K)	CRC Handbook of Chemistry and Physics (2003-2004)
Thermal conductivity	401 W/m*K (@ 300K)	CRC Handbook of Chemistry and Physics (2003-2004)
Dielectric constant
Index of refraction	0.15 @ 700 nm	ASM Specialty Handbook: Copper and Copper Alloys (2001)
Electrical conductivity	6.00 x 10^-7 Ohm^-1*m^-1 – 1.25 x 10^-7 Ohm^-1*m^-1	H.M. Choi, S.K. Choi et. al. “Influence of film density on residual stress and resistivity for Cu thin films deposited by bias sputtering.” Thin Solid Films 358 (2000) 202-205.
Magnetic permeability	~1 – Diamagnetic	ASM Specialty Handbook: Copper and Copper Alloys (2001)
Piezoresistivity	p11 = 5.7 x 10^-3 Gpa ^-1 p12 = 6.3 x 10^-3 Gpa^-1	C. Hu, Y. Gao, Z. Sheng. “The piezoresistance coefficients of copper and copper-nickel alloys.” Journal of Materials Science 35 (2000) 381-386
Piezoelectricity
Wet etching method	Sulfuric Acid/Hydrogen peroxide	MEMS Exchange (http://www.mems-exchange.org/)
Plasma etching method	Cl2, HCl and HBr plasma etching	Y. Kuo, S. Lee. “Room temperature copper etching based on a plasma-copper reaction.” Applied Physics Letters, 78 (7) February 2001.
Adhesion to silicon dioxide	Variant (1.5 – 3.5 J/m^2). Generally weak and improved with alloying, use of an adhesion layer, or surface preparation	[1] K. Nagao, J. Neaton, N. Ashcroft. “Ab initio study of adhesion at Cu/SiO2 interface.” (Cornell Univ. and Rutgers Univ. - Presentation) [2] P.J. Ding, W.A. Lanford, S. Hymes, S.P. Murarka. “Oxidation resistant high conductivity films” Applied Physics Letters 64 (21) May 1994	www.ccmr.cornell.edu/IRG-Glass/nagao.ppt
Biocompatibility	YES – if properly coated (ie. Silicone)	E. Pina, E. Burgos, et. al. “Magnetoelastic sensor as a probe for muscular activity, an in vivo experiment.” Sensors and Actuators A 91 (2001) 99-102
Hydrophobicity	5 degrees with water (“polished” copper)	“Coating Lubricous Surfaces Paper” VITEK research Corporation (www.vitekres.com)