6.777J/2.751J Material Property
Database
Material: Indium Tin
Oxide (ITO)
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Property |
Value |
Reference |
Image/URL (optional) |
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6.8 g/cm3 |
J Vac Sci Tech
A 19:5(2043-7); 2001 |
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Young's modulus (sputtered, 10wt% SnO2) |
116 GPa |
Thin Solid Films 278:1-2(12-17); 1995 |
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Poisson ratio (sputtered, 10wt% SnO2) |
0.35 |
Thin Solid Films 278:1-2(12-17); 1995 |
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Stiffness Constants |
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Tensile or fracture strength failure strain (105 nm film) failure strain (16.8 nm film) |
0.022 0.003 |
MRS Symp Proc 666
(F3.24.1 – 12); 2001 |
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Residual stress on silicon (sputtered, 10wt% SnO2) |
-2.1 ~ -2.3 GPa |
Thin Solid Films 278:1-2(12-17); 1995 |
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Specific heat |
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Thermal conductivity |
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Dielectric constant |
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Index of refraction (increases with anneal) |
~1.7 @633 nm 1.8 - 2.0 |
Appl Surf Sci 179:1-4(181-90);
2001 J Vac Sci
Tech A 19:5(2514-21);
2001 |
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Electrical conductivity (“standard” sputtered) (epi, 5.7wt% SnO2) |
~104 S/cm 1.3 x 104 S/cm |
Thin Solid
Films 411:1(1-5); 2002 Vacuum 66:3-4(419-25);
2002 |
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Magnetic permeability |
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Piezoresistivity: gage factor (sputtered) (laser deposited) |
0.2 ~ -14.7 2.04 ~ -77.71 |
J Appl Phys 91:9(6194-6);
2002 Thin Solid Films 288 (279-286); 1996 |
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Piezoelectricity |
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Wet etching method |
oxalic acid HCl/HNO3 |
Langmuir 18:1(194-7); 2002 J Electron Mat 25:12(1806-17); 1996 |
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Plasma etching method |
CH4/H2/Ar |
J Vac Sci
Tech A 16:4(2177-86);
1998 |
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Adhesion to silicon dioxide |
good – in pulloff tests of 1000 Å
ITO and 1300-30,000 Å SiO2, failures occurred in substrate rather
than ITO/oxide. |
Appl Surf Sci 115:1(96-102);
1997 |
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Biocompatibility |
no observed inhibition of cell growth;
small amount of protein adsorption |
Proc IEEE/EMBS Conf on Microtechnologies
in Medicine & Biology (261-4);2002 |
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Hydrophobicity advancing qc receding qr |
varies strongly with surface treatment 28.6°-96.5° 12.3°-49.3° |
J Appl Phys 86:5
(2774-8); 1999 |
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