6.777J/2.751J Material Property Database

 

Material: LPCVD Silicon Dioxide

 

Property

Value

Reference

Image/URL (optional)

Mass density

2160 kg/m3, LPVCD performed  at T = 400 C

Process-dependent thermal transport properties of silicon-dioxide films deposited using low-pressure chemical vapor deposition
Ju, Y.S. (Dept. of Mech. Eng., Stanford Univ., CA, USA); Goodson, K.E. Source: Journal of Applied Physics, v 85, n 10, 15 May 1999, p 7130-4
ISSN: 0021-8979 CODEN: JAPIAU
Publisher: AIP, USA

 

Young's modulus

46 – 75 Gpa Thermal-wet grown,thickness=0.425um,values are calculated using electrostatically deflectable membrans and Cr for metallization

IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249

http://www.memsnet.org/material/silicondioxidesio2film/

Poisson ratio

0.17  Value obtained by micro-indentation test for thermally grown SiO2 film on a silicon<111> wafer.

Thin Solid Films,283(1996), p.15

http://www.memsnet.org/material/silicondioxidesio2film/

Stiffness Constants

 

 

 

Tensile or fracture strength

 

 

 

Residual stress on silicon

2.1-4.2 x 10^9 dyne/cm^2 depending on T of deposition

Highly stable silicon dioxide films deposited by means of rapid thermal low-pressure chemical vapor deposition onto InP
Katz, A. (AT&T Bell Labs., Murray Hill, NJ, USA;); Feingold, A.; Chakrabarti, U.K.; Pearton, S.J.; Jones, K.S. Source: Applied Physics Letters, v 59, n 20, 11 Nov. 1991, p 2552-4
ISSN: 0003-6951 CODEN: APPLAB
Country of publication: USA

 

Specific heat

1.56 MJ/(m^3 k) at LPCVD T = 400C. Property changes depending on T of LPCVD, the reference contains more data.

Process-dependent thermal transport properties of silicon-dioxide films deposited using low-pressure chemical vapor deposition
Ju, Y.S. (Dept. of Mech. Eng., Stanford Univ., CA, USA); Goodson, K.E. Source: Journal of Applied Physics, v 85, n 10, 15 May 1999, p 7130-4
ISSN: 0021-8979 CODEN: JAPIAU
Publisher: AIP, USA

 

Thermal conductivity

0.95  W/mk  LPCVD performed at T=400 C, film thickness 0.3micron. Refernce contains values for different T and different film thickness . No annealing included, after annealing  k can be found in the 2nd refernce.

Annealing-temperature dependence of the thermal conductivity of LPCVD silicon-dioxide layers
Goodson, K.E.; Flik, M.I.; Su, L.T.; Antoniadis, D.A.;
Electron Device Letters, IEEE  ,Volume: 14 , Issue: 10 , Oct. 1993
Pages:490 - 492

http://ieeexplore.ieee.org/search

Capacitance

20-60 pF, in a LPCVD SiO2 MOS structure

Electrical characterization of low-pressure chemical-vapor-deposited silicon dioxide metal-oxide-silicon structures
Ang, S.S. (Dept. of Electr. Eng., Arkansas Univ., Fayetteville, AR, USA); Shi, Y.J.; Brown, W.D. Source: Journal of Applied Physics, v 73, n 5, 1 March 1993, p 2397-401

 

Index of refraction

1.46 for thermal grown oxide

 

http://www.timedomaincvd.com/CVD_Fundamentals/films/SiO2_properties.html

Dielectric Constant

3.9 -4.5 plain Silicon Dioxide

 

http://www.asiinstr.com/dc1.html#SECTION-S

Electrical conductivity

 

 

 

Magnetic permeability

 

 

 

Piezoresistivity

 

 

 

Piezoelectricity

 

 

 

Wet etching method

 

 

 

Plasma etching method

 

 

 

Adhesion to silicon dioxide

 

 

 

Biocompatibility

 

 

 

Hydrophobicity

 

 

 

Capacitance

20-60 pF, in a LPCVD SiO2 MOS structure

Electrical characterization of low-pressure chemical-vapor-deposited silicon dioxide metal-oxide-silicon structures
Ang, S.S. (Dept. of Electr. Eng., Arkansas Univ., Fayetteville, AR, USA); Shi, Y.J.; Brown, W.D. Source: Journal of Applied Physics, v 73, n 5, 1 March 1993, p 2397-401