6.777J/2.751J Material Property Database

 

Material:  PECVD Silicon Nitride*

*Properties for PECVD nitride depend heavily on method of deposition.

 

Property

Value

Reference

Image/URL (optional)

Mass density

2500 kg/m3

IEEE 1990 Ultrasonics Symposium Proceedings (Cat. No.90CH2938-9), 1990, p 445-8 vol.1

 

Young's modulus

160 GPa

Proceedings IEEE Sixteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.03CH37426), 2003, p 678-81

 

Poisson ratio

0.253

Thin-Films - Stresses and Mechanical Properties VII. Symposium, 1998, p 27-32

 

Stiffness Constants

n/a

 

 

Tensile or fracture strength

2.4 GPa

Thin Films: Stresses and Mechanical Properties Symposium, 1989, p 63-8

 

Residual stress on silicon

600 MPa (compressive)

Applied Physics A (Materials Science Processing), v A74, n 2, Feb. 2002, p 181-6

 

Specific heat

0.17 J/g-K

http://www.ai.mit.edu/people/tk/tks/silicon-nitride.html

 

Thermal conductivity

16-33 W/m-K

http://www.ai.mit.edu/people/tk/tks/silicon-nitride.html

 

Dielectric constant

7

Journal of the Electrochemical Society, v 137, n 12, Dec. 1990, p 3910-17

 

Index of refraction

1.8

IEEE 1992 Ultrasonics Symposium (Cat. No.92CH3118-7), 1992, p 369-72 vol.1

 

Electrical conductivity

1012 Ω-cm

Journal of the Electrochemical Society, v 137, n 12, Dec. 1990, p 3910-17

 

Magnetic permeability

n/a

 

 

Piezoresistivity

n/a

 

 

Piezoelectricity

Strong (LICVD)

Applied Physics Letters Vol 62(3) pp.321-322. January 18,1993.

 

Wet etching method

BHF/Phosphoric Acid

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407), 2000, p 76-8

 

Plasma etching method

SF6/O2 in LAM490B

www-mtl.mit.edu

 

Adhesion to silicon dioxide

good

Applied Physics Letters, v 64, n 17, 25 April 1994, p 2226-8

 

Biocompatibility

good

Sensors and Actuators B (Chemical), v B38, n 1-3, Jan.-Feb. 1997, p 38-41

 

Hydrophobicity

No, but achievable through chemical surface modification

Sensors and Actuators A (Physical), v A30, n 3, Feb. 1992, p 231-9