6.777J/2.751J Material Property
Database
Material: PECVD
Silicon Dioxide
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Property |
Value |
Reference |
Image/URL
(optional) |
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2.3 (g/cm^3) |
Film
Characteristics of Low-Temperature PECVD SiO2 using tetraisocyanatesilane and
O2; Idris et al; Japanese Journal of Applied Physics |
http://jjap.ipap.jp/… …link?JJAP/37/6562 |
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Young's modulus |
85 +/- 4 (GPA) |
Elastic Properties of SiO2
deposited by CVD from tetraethylflorthosilicate; Carlotti et al; European materials research society
spring symposium |
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Poisson ratio |
.25 |
Elastic Properties of SiO2
deposited by CVD from tetraethylflorthosilicate; Carlotti et al; European materials research society
spring symposium |
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Stiffness Constants |
c11=76 c44=25.5 (GPA) |
Elastic Properties of SiO2
deposited by CVD from tetraethylflorthosilicate; Carlotti et al; European materials research society
spring symposium |
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Tensile or fracture strength |
9.52 (Gpa) |
MEMS and Nanotechnology
Clearinghouse |
http://www.memsnet.org/material/… …amorphoussilicondioxideasio2film/ |
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Residual stress on silicon |
-62.7 Mpa |
Elastic Properties of SiO2
deposited by CVD from tetraethylflorthosilicate; Carlotti et al; European materials research society
spring symposium |
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Specific heat |
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Thermal conductivity |
1.1 W/m/K |
MEMS and Nanotechnology
Clearinghouse |
http://www.memsnet.org/… …material/silicondioxidesio2film/ |
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Dielectric constant |
5 |
The Effective
Dielectric-Constant Of SiO2 Deposited in the spaces between adjacent
conductors; Schwartz et al; Journal of the Electrochemical Society |
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Index of refraction |
1.46 |
Film
Characteristics of Low-Temperature PECVD SiO2 using tetraisocyanatesilane and
O2; Idris et al; Japanese Journal of Applied Physics |
http://jjap.ipap.jp/… …link?JJAP/37/6562 |
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Electrical conductivity |
7E-15 1/(ohm*cm) |
Film
Characteristics of Low-Temperature PECVD SiO2 using tetraisocyanatesilane and
O2; Idris et al; Japanese Journal of Applied Physics |
http://jjap.ipap.jp/… …link?JJAP/37/6562 |
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Magnetic permeability |
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Piezoresistivity |
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Piezoelectricity |
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Wet etching method |
Buffered HF Rate: <3 (nm/s) |
Physical and electrical
properties of low temp E100degC SiO2 films deposited by electron cyclotron
resonance plasmas |
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Plasma etching method |
CF4/H2 etch gas |
Microsystem Design; Senturia |
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Adhesion to silicon dioxide |
excellent |
Microsystem Design; Senturia |
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Biocompatibility |
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Hydrophobicity |
Hydrophilic, very low contact
angle |
Structure and Reactivity of
Water at Biomaterial Surfaces; Vogler; Advances in Colliod and Interface Science |
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