6.777J/2.751J
Material Property Database
Material:
Thermal silicon oxide
Property |
Value |
Reference |
Image/URL (optional) |
Mass density |
2200 kg/m^3 |
IEEE
Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249 |
|
Young's modulus |
70(wet grown) 57(dry grown) |
Thin Solid Films,283(1996),
p.15, IEEE Transactions on electron
devices,Vol.ED25,No.10,Oct1978, p.1249 |
|
Poisson ratio |
0.17 |
Thin Solid Films,283(1996),
p.15 |
|
Stiffness Constants |
Since films are amorphous, see
Young’s modulus |
|
|
Tensile or fracture strength |
110 MPa
(tensile strength), 690-1380 MPa (compressive
strength) |
AZOM |
|
Residual stress on silicon |
-300 MPa
(biaxial), -275 to -225 MPa (wet 950 deg C) |
MEMS Clearinghouse, IEEE MEMS
Workshop, p.223, 1993 |
|
Specific heat |
1.0 J/gK |
A.S. Grove: Physics and
Technology of Semiconductor Devices |
|
Thermal conductivity |
1.4 W/mK |
A.S. Grove: Physics and
Technology of Semiconductor Devices |
|
Dielectric constant |
3.9 |
Muller and Kamins:
Device Electronics for Integrated Circuits |
|
Index of refraction |
1.46 |
Michelle M. Gauthier,
Engineering Materials Handbook, ASM desk edition. |
|
Electrical conductivity |
Insulator, 10^-12 S/cm |
Michelle M. Gauthier,
Engineering Materials Handbook, |
|
Magnetic permeability |
Must be small, most probably
zero, because amorphous |
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Piezoresistivity |
No, since amorphous |
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Piezoelectricity |
No, amorphous |
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Wet etching method |
Buffered HF |
Steve Senturia’s
book |
|
Plasma etching method |
CF4/H2 |
Steve Senturia’s
book |
|
Adhesion to silicon dioxide |
Hm… very adhesive J |
|
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Biocompatibility |
Compatible (a piece of glass in
a tissue will probably not cause repelling) |
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Hydrophobicity |
Hydrophilic, but not too much
(drop some water on a glass) |
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