6.777J/2.751J Material Property
Database
Material: SU-8
Photoresist
Property |
Value |
Reference |
Image/URL (optional) |
Mass density |
1,190
kg/m3 |
Roch, |
|
Young's modulus |
4.02 Gpa |
|
|
Poisson ratio |
0.22 |
|
|
Stiffness Constants |
|
|
|
Tensile or fracture
strength |
34 Mpa |
|
|
Residual stress on
silicon |
16-19 MPa |
|
|
Specific heat |
|
|
|
Thermal conductivity |
0.2 W/mK |
|
|
Dielectric constant |
3 |
|
|
Index of refraction |
1.67-1.8 |
|
|
Electrical
conductivity |
|
|
|
Magnetic permeability |
1.08 |
Calculated from n = (ermr)1/2 for
linear media |
|
Piezoresistivity |
|
|
|
Piezoelectricity |
|
|
|
Wet etching method |
PGMEA |
Normal chemical for
developing SU-8 |
|
Plasma etching method |
FIB (?) |
Focused Ion Beam can
be used to cut SU-8 (dry etch) |
|
Adhesion to silicon
dioxide |
Poor |
Conradie, E.H., “SU-8 thick photoresist
processing as a functional material for MEMS applications”. |
|
Biocompatibility |
Good |
|
|
Hydrophobicity |
Hydrophobic |
http://aveclafaux.freeservers.com/SU-8.html (used for fluidic
channels) |
|