6.777J/2.751J
Material Property Database
Material: Tungsten
|
Property |
Value
|
Reference |
Image/URL (optional) |
|
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19.25 g/cm3 |
MEMSnet http://www.memsnet.org/material/tungstenwbulk/ |
|
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Young's
modulus |
410 Gpa |
MEMSnet |
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|
Poisson ratio |
0.26 |
Applied
Physics Letters, Vol 73, No 14 “Poisson’s
ratio measurement in tungsten thin films combining an x-ray diffractometer with in situ tensile tester” |
|
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Stiffness
Constants |
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Tensile or
fracture strength |
0.01 |
Limiting
Strain – MEMSnet http://www.memsnet.org/material/tungstenwfilm/ |
|
|
Residual
stress on silicon |
-3 – 2 Gpa |
Journal of
Applied Physics, Vol 87, No 1 “Residual
stress, microstructure, and structure of tungsten thin films deposited by
magnetron sputtering” |
|
|
Specific heat |
132.51 J/kg/K |
MEMSnet http://www.memsnet.org/material/tungstenwbulk/ |
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Thermal
conductivity |
178 W/m/K |
MEMSnet |
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Dielectric
constant |
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Index of
refraction |
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Electrical
conductivity |
5.3 x 10-6
W cm |
Tungsten and
Other Refractory Metals for VLSI Applications, 1985 – “Tungeten
– A Spectator’s View” |
|
|
Magnetic
permeability |
3.3 x 10-7 |
MatWeb http://www.matweb.com/search/SpecificMaterial.asp?bassnum=MEW000 |
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Piezoresistivity |
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Piezoelectricity |
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Wet etching
method |
Acids |
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Plasma etching
method |
SF6 |
Acta Polytechnica Scandinavica,
Electrical Engineering Series, 1995 “Plasma
etching in microdevice fabrication: thin film and
process integration aspects” |
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|
Adhesion to
silicon dioxide |
Low to none |
Tungsten and
Other Refractory Metals for VLSI Applications, 1985 “Adhesion of
non-selective CVD tungsten to silicon dioxide” |
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Biocompatibility |
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Hydrophobicity |
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