Physics Spotlight  
MIT postdoc Junwei Liu and collaborators are proposing a new random access memory (RAM) device architecture using ferroelectric tunneling RAM. “It’s very simple, and it’s really practical, and I think it could be realized in the near future,” Liu says. MIT Assistant Professor Liang Fu is one of the paper’s senior authors. Photo: Denis Paiste/Materials Processing CenterMIT postdoc Junwei Liu and collaborators are proposing a new random access memory (RAM) device architecture using ferroelectric tunneling RAM. “It’s very simple, and it’s really practical, and I think it could be realized in the near future,” Liu says. MIT Assistant Professor Liang Fu is one of the paper’s senior authors.
Photo: Denis Paiste/Materials Processing Center

Charging up random access memory

Researchers demonstrate room-temperature ferroelectric states in ultra-thin films of tin and tellurium.

Denis Paiste | Materials Processing Center
July 14, 2016

Just as magnetic materials have opposing North and South poles, ferroelectric materials have opposing positive charges and negative charges that exhibit measurable differences in electric potential. Researchers at MIT and colleagues in China recently demonstrated this ferroelectric behavior along the edges of atomically thin tin-tellurium film at room temperature.
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