R. I. P.

The original web server for EDIP software (cmtek2.harvard.edu) died in March 2000, after ten years of distinguished service to the Kaxiras Group at Harvard. The download gateway is temporarily unavailable. This list below is an automatically generated record of all downloads prior to March 2000. A few names have been added since then, but the list is far from complete.
--- Martin Bazant

EDIP Software Downloads

  1. Name: Martin Z. Bazant
    Comments: I am using EDIP to study amorphous voids and surfaces, amorphous-liquid transition, crystal melting, (100) surface premelting, ....
    Time: Monday, Febraury 2, 1998 - 12:10:51 am
    E-Mail: bazant@cmt.harvard.edu
    Address: Department of Physics Harvard University Cambridge, MA 02138

  2. Name: Peter Gumbsch
    Comments: Implement it in our Finite Element-Atomistic (FEAt) code and play around with it
    Time: Monday, Febraury 2, 1998 - 01:27:35 am
    E-Mail: gumbsch@finix.mpi-stuttgart.mpg.de
    Address: MPI Metallforschung Seestr. 92 D-70174 Stuttgart, Germany

  3. Name: Kai Nordlund
    Comments: Calculations of collision cascades and properties of amorphous clusters in bulk
    Time: Monday, Febraury 2, 1998 - 01:46:25 am
    E-Mail: kai.nordlund@helsinki.fi
    Address: Accelerator Lab P. O: Box 43, 00014 University of Helsinki Finland

  4. Name: aourag hafid
    Comments: in order to calculate the total energy and elastic constant of silicon in MD
    Time: Tuesday, Febraury 3, 1998 - 02:11:32 am
    E-Mail: vrpgudl@ist.cerist.dz
    CMSL 22 Rue Hoche 22000 Sidi BelAbbes Algeria

  5. Name: Asoke. P. Chattopadhyay
    Comments: to model silicon clusters, surfaces etc. of different types, with or without embedded/chemisorbed atoms/molecules. I wish to compare the results obtained by EDIP method with other methods (e.g. ab-initio cluster models).
    Time: Tuesday, Febraury 3, 1998 - 04:37:21 am
    E-Mail: asoke@klyuniv.ernet.in
    Address: Department of Chemistry University of Kalyani Kalyani 741235 INDIA

  6. Name: Matti Mäki-Jaskari
    Comments: At this moment ,fracture in silicon ,if better than the old version. We suppose that we are quite aware of some limitations of the model in this case. We are also interested about other groups. Thanks
    Time: Tuesday, Febraury 3, 1998 - 01:13:15 pm
    E-Mail: mmakijas@lce.hut.fi
    Address: Helsinki University of Technology Laboratory of Computational Engineering P.O.Box 9400 FIN-02015 HUT FINLAND

  7. Name: somebody
    Comments: well, don't know yet.....
    Time: Wednesday, Febraury 4, 1998 - 10:15:24 am

  8. Name: christopher roland
    Comments: Just to check it out at some point. I have been looking for an alternate to Stillinger Weber for quite some time now. Perhaps this will be useful?
    Time: Saturday, Febraury 7, 1998 - 10:20:57 am
    E-Mail: roland@ajax.physics.ncsu.edu
    Address: Department of Physics, NCSU Raleigh, NC 27695-8202

  9. Name: radu cojocaru
    Time: Saturday, Febraury 7, 1998 - 01:10:47 pm
    E-Mail: cojocaru@icmct.uvt.ro

  10. Name: David Drabold
    Comments: Application to a-Si
    Time: Sunday, Febraury 8, 1998 - 12:02:21 am
    E-Mail: drabold@ohiou.edu
    Address: Ohio University

  11. Name: Ryan Bubb
    Comments: I am writing a molecular dynamics simulation of low energy (10-100eV) impacts of silicon atoms on a silicon crystal lattice for my honors thesis as an undergraduate physics major at William and Mary. I had planned to use the Stillinger Weber potential, but am intrigued by the EDIP.
    Time: Sunday, Febraury 8, 1998 - 08:57:31 pm
    E-Mail: rjbubb@as.wm.edu
    Address: Applied Science Department Tercentenary Hall College of William and Mary Williamsburg, VA 23187

  12. Name: Froehner, Michael
    Comments: Numerical tests for atomic interaction in phase transition processes
    Time: Thursday, March 5, 1998 - 11:22:30 am
    E-Mail: froehner@math.tu-cottbus.de
    Address: Technical University of Cottbus, Institut of Mathematics, Michael Froehner P.B. 101344 D - 03013 Cottbus

  13. Name: Hong Sang Kean
    Time: Thursday, March 12, 1998 - 03:37:28 am
    E-Mail: skhong@dhis.co.kr

  14. Name: Dominic Holland
    Comments: Not at all sure that I will use it. Colud use MAXIMA or Mathematica to get the derivatives of the potentials, clean that up and replace my Stillinger-Weber force code with it. I fracture silicon, but there's supposed to be a problem with a lack of (111) surface reconstruction using SW. I have some unusual fracture behavior along (111), and I would like to know if it shows up with other potentials.
    Time: Friday, March 20, 1998 - 08:37:03 pm
    E-Mail: holland@chaos.ph.utexas.edu
    Address: Grad Boxes UT Physics R.L.M 5.208 Austin TX 78712

  15. Name: Timothy C. Germann
    Comments: Implement it in our MD code (SPaSM) and play around with it a bit, possibly for polycrystalline Si.
    Time: Tuesday, March 24, 1998 - 01:14:07 pm
    E-Mail: tcg@lanl.gov
    Address: Theoretical Division (T-11) MailStop B262 Los Alamos National Laboratory Los Alamos, NM 87545

  16. Name: Joshua Fujiwara
    Comments: I will calculate thermal properties of Silicon.
    Time: Wednesday, March 25, 1998 - 11:19:04 am
    E-Mail: jsof@mit.edu
    Address: 77 Mass. Ave. R215-B Cambridge, MA 02146

  17. Name: Gopalakrishnan Subramanian
    Comments: I would like to use the EDIP force subroutine to do molecular dynamics and energy minimization calculations to study dislocation nucleation in ion-implanted Si.
    Time: Thursday, March 26, 1998 - 02:26:29 pm
    E-Mail: gsubr@grove.ufl.edu
    Address: G.Subramanian New Engineering Building (5th Floor) Building #33 University of Florida Gainesville, FL 32611

  18. Name: trial
    Comments: just trying something out..
    Time: Thursday, March 26, 1998 - 02:35:57 pm
    E-Mail: gsubr@mail.mse.ufl.edu
    Address: univ of florida

  19. Name: Dr. Masuhiro Mikami
    Comments: I want to use the EDIP for the structure analysis of the bulk silicon with the defects.
    Time: Sunday, April 5, 1998 - 11:00:07 pm

  20. Name: Umesh Waghmare
    Comments: Just to play with it.
    Time: Tuesday, April 7, 1998 - 11:20:57 pm
    E-Mail: waghmare@cmt.harvard.edu
    Address: Dept of Physics Harvard University

  21. Name: Claudia
    Time: Friday, April 10, 1998 - 06:15:21 am
    E-Mail: BZB16741@niftyserve.or.jp

  22. Name: HALLS Y.C.Liu
    Time: Friday, April 10, 1998 - 01:05:10 pm
    E-Mail: @MS13.HINET.NET

  23. Name: Jeong-Won, Kang
    Comments: I calculated Si potential using SW model. I have seen your paper in MRS vol.469. I think that EDIP is better than SW. I have studied silicon process, ion implantation and diffusion. Using EDIP force, I will calculate atomic properties of silicon process.
    Time: Sunday, April 12, 1998 - 08:45:13 am
    E-Mail: kok@semilab3.ee.cau.ac.kr
    Address: Semiconductor process & Devices lab. Chung-Ang Univ. Seoul, Kores

  24. Name: Wei Wang
    Comments: Use for molecular dynamics simulations
    Time: Friday, April 24, 1998 - 02:59:12 pm
    E-Mail: wwang@pacific.mps.ohio-state.edu
    Address: 174 W. 18th Ave. Columbus OH 43210 Ohio State University Group of Prof. John W. Wilkins

  25. Name: Martin Swart
    Comments: Ion implantation and damadge
    Time: Saturday, April 25, 1998 - 09:06:53 am
    E-Mail: swartm@ilink.nis.za
    Address: Department of Physics University of the North P. O. Box 4179 PIETERSBURG, 0700 South Africa

  26. Name: Bambang
    Comments: We used it as a tool to succeed our costdown planning.
    Time: Sunday, April 26, 1998 - 03:36:07 pm

  27. Name: stella nikuli
    Comments: Instructional use
    Time: Monday, May 4, 1998 - 10:08:23 am
    E-Mail: nikella@lycosmail.com
    Address: A. Wouters 5/6 1090 Jette Belgium

  28. Name: Kong, x
    Comments: Do some research work for simulation
    Time: Saturday, May 16, 1998 - 05:09:52 am
    E-Mail: xykongc@online.sh.cn
    Address: Shanghai Jiaotong university Materials Science Shanghai 200030 P.R.China

  29. Name: Frühbrodt, Eike
    Comments: We are readers of the Hauschildt / Wenzel / Alting publication. Therefore we'd like to test the tool. Later on a use of the tool within the design process may be possible.
    Time: Thursday, May 28, 1998 - 05:39:37 am
    E-Mail: efruehbr@hdpp.de
    Address: Von-Sauer-Str. 31d D-22761 Hamburg Germany

  30. Name: Joe Rongen
    Comments: Private Research with EDIP
    Time: Thursday, May 28, 1998 - 10:24:14 pm

  31. Name: Bernd Eberhard
    Comments: Interfaces in materials, esp. grain boundaries
    Time: Friday, May 29, 1998 - 01:55:27 pm
    E-Mail: ber@physik.uni-augsburg.de
    Address: Institut fuer Physik Memmingerstr. 6 86135 Augsburg Germany

  32. Name: Juen-Kai Wang
    Time: Saturday, May 30, 1998 - 02:58:41 am
    E-Mail: jkwang@ccms.ntu.edu.tw
    Address: Center for Condensed Matter Sciences National Taiwan University 1 Roosevelt Road, Section 4 Taipei, Taiwan, ROC

  33. Name: Graça Lemos
    Comments: I'm teacher of Physics for secondary.
    Time: Saturday, June 6, 1998 - 08:07:16 am
    E-Mail: lemoscosta@mail.telepac.pt
    Address: Rua do Socorro, 15 4480 Vila do Conde Portugal

    Time: Monday, June 15, 1998 - 06:10:05 am

  35. Name: Mario Rosati
    Time: Monday, June 15, 1998 - 09:48:29 am
    E-Mail: rosati@caspur.it
    Address: CASPUR c/o CICS Universita' "La Sapienza" P.le A. Moro, 5 00185 Roma (ITALY)

  36. Name: inoue
    Time: Thursday, June 18, 1998 - 05:14:57 am

  37. Name: zqyang
    Comments: don't no yet
    Time: Wednesday, June 24, 1998 - 08:04:47 am
    E-Mail: 970011@fudan.edu.cn
    Address: Physics Department Fudan University Shanghai 200433 China

  38. Name: Zhongqin Yang
    Comments: just trying something out.
    Time: Wednesday, June 24, 1998 - 08:05:41 am
    E-Mail: 970011
    Address: Physics Department Fudan University Shanghai 200433 China

  39. Name: Yanwu Lu
    Comments: I want to calculate the strain in GaN.
    Time: Wednesday, June 24, 1998 - 12:56:13 am
    E-Mail: ylu@cruiser.engin.umb.edu
    Address: 20 Mount Vernon St. Dorchester, MA 02125-1605

  40. Name: Serge M. Nakhmanson
    Comments: Study big (1000 atoms and more?) models of a-Si:H with voids.
    Time: Wednesday, June 24, 1998 - 01:11:48 pm
    E-Mail: nakhmans@helios.phy.ohiou.edu
    Address: Clippinger Labs, Dep-t of Physics & Astronomy, Ohio University, Athens, OH

  41. Name: Matti Maki-Jaskari
    Comments: Molecular dynamics
    Time: Thursday, June 25, 1998 - 08:02:01 am
    E-Mail: mmakijas@lce.hut.fi

  42. Name: Kalle Kainu
    Comments: simulations of crack growth in silicon
    Time: Thursday, July 2, 1998 - 03:00:30 am

  43. Name: Antti Kuronen
    Comments: Currently, just to check it out. I wonder if there are any plans to apply EDIP to compound semiconductor material.
    Time: Wednesday, July 8, 1998 - 04:30:09 am
    E-Mail: Antti.Kuronen@hut.fi
    Address: Helsinki University of Technology Laboratory of Computational Engineering P.O.Box 9400, FIN-02015 HUT, FINLAND

  44. Name: John Michelsen
    Comments: simulate nanofabrication
    Time: Thursday, July 16, 1998 - 08:47:22 pm
    E-Mail: jmichels@zyvex.com
    Address: Zyvex LLC

  45. Name: Pavel Fastenko
    Comments: apply to extended defects in Si. I want to compare to SW.
    Time: Thursday, July 23, 1998 - 04:20:55 pm
    E-Mail: fastenko@tonka.bu.edu
    Address: Boston University Electrical and Computer Engineering Dept 8 St. Mary's street Boston, MA 02215

  46. Name: Pavel Fastenko
    Time: Thursday, July 23, 1998 - 04:34:22 pm

  47. Name: David Robinson
    Comments: Interested in time evolution of defect clusters in silicon and corresponding energy states
    Time: Wednesday, July 29, 1998 - 10:52:48 am
    E-Mail: darobinson@home.com
    Address: 3656 Merced Dr Oceanside, CA 92056 Physicist (Raytheon Systems)

  48. Name: boureau
    Comments: still undecided
    Time: Thursday, July 30, 1998 - 01:15:10 pm
    E-Mail: geb@ccr.jussieu.fr
    Address: Laboratoire de chimie physique Universite Pierre et Marie Curie 11, rue Pierre et Marie Curie 75231 Paris Cedex 5 France

  49. Name: tahir cagin
    Comments: I will look into surface reconstructions of Si and their energetics.
    Time: Thursday, July 30, 1998 - 03:28:28 pm

  50. Name: Jian Zi
    Comments: To study the structure transformation of semiconductor nanocrystals.
    Time: Thursday, August 6, 1998 - 10:20:27 am
    E-Mail: jzi@fudan.edu.cn
    Address: Dept. of Phys. Fudan Univ. Shanghai 200433 P. R. China

  51. Name: Peter Kroll
    Comments: Test. Tranfer probably to binary phases
    Time: Friday, August 7, 1998 - 05:56:31 pm
    E-Mail: pk32@cornell.edu
    Address: Cornell University Chemistry Department Baker Lab Ithaca, NY 14853-1301

  52. Name: Seung-Youl Kang
    Time: Monday, August 10, 1998 - 06:46:27 am
    E-Mail: sykang@cadvax.etri.re.kr
    Address: Taejon, Yusong-Gu, ETRI, Korea

  53. Name: David Robinson
    Time: Tuesday, August 18, 1998 - 01:25:07 pm

  54. Name: byongmok ahn
    Time: Thursday, August 27, 1998 - 05:39:25 am
    E-Mail: calvinair@hotmail.com
    Address: kyonggi.university south KOREA

  55. Name: sdfsdfgsdfg
    Comments: fgfghfgh fghfdgh fgh dfjftui6uror
    Time: Tuesday, September 8, 1998 - 09:35:07 am

  56. Name: JeongWon, Kang
    Time: Friday, September 11, 1998 - 02:36:26 am
    E-Mail: kok@semilab3.ee.cau.ac.kr

  57. Name: D. Y. Sun
    Comments: do research work.
    Time: Tuesday, September 15, 1998 - 04:33:12 am
    E-Mail: dysun@theory.issp.ac.cn
    Address: Institute of Solid State Physics, Heifei-230031, P. R. China

  58. Name: Hoai, T.X.
    Comments: We are studying nanocrystaline photoelectrodes. simulation of growth grain boundary, current transport ect...
    Time: Thursday, September 24, 1998 - 03:29:57 am
    E-Mail: txhoai@capsi.ac.vn
    Address: Center for Applied Physics, Vietnam Nghiado-caugiay-Hanoi,Vietnam P.O. Box 630 Boho Hanoi VN Telephone 84 4 8344711 Fax:84 4 352483

  59. Name: Martin Z. Bazant
    Comments: Study of defects, disordered phases and surfaces. Extension to compound semiconductors.
    Time: Friday, September 25, 1998 - 08:53:27 pm
    E-Mail: bazant@math.mit.edu
    Address: Department of Mathematics, Building 2-339, MIT, Cambridge, MA 02139-4307

  60. Name: Eros Albertazzi
    Comments: Silicon displacement-threshold energy
    Time: Monday, September 28, 1998 - 05:23:54 am
    E-Mail: eros@lamel.bo.cnr.it
    Address: CNR-LAMEL Via P.Gobetti 101 40129 Bologna, Italy

  61. Name: Joel Eymery
    Comments: To study Si grain boundaries
    Time: Monday, September 28, 1998 - 05:52:36 am

  62. Name: Joel Eymery
    Time: Monday, September 28, 1998 - 05:58:03 am

  63. Name: Sergei I.Chikicev
    Comments: I am a newcomer in the field, but have some plans to simulate a very unusual extended defects, formed in silicon under high voltage electron irradiation and studied by HREM
    Time: Tuesday, September 29, 1998 - 02:38:34 am
    E-Mail: chika@isp.nsc.ru
    Address: 630090 Novosibirsk-90 Academician Lavrentiev Avenue, 13 Institute of Semiconductor Physics, Siberian Branch if the Russian Academy of Sciences,RUSSIA

  64. Name: Normand Mousseau
    Comments: ART (activation-relaxation technique), of course
    Time: Thursday, October 1, 1998 - 05:46:43 pm
    E-Mail: mousseau@ohio.edu
    Address: Dept. Physics and Astronomy Ohio University Athens, OH 45701

  65. Name: ng chi wai
    Comments: calculate the force between atoms
    Time: Wednesday, October 7, 1998 - 08:18:35 am

  66. Name: ng chi wai
    Comments: to calculate the force between atoms
    Time: Thursday, October 8, 1998 - 10:59:55 am

  67. Name: Atsushi Kawamoto
    Comments: We would like to simulate some extended defect structures in silicon.
    Time: Thursday, October 8, 1998 - 09:26:10 pm

  68. Name: Richard Hodgson
    Comments: Plan to eventually look at using EDIP in global minimization problem of small clusters of atoms.
    Time: Sunday, October 11, 1998 - 01:19:42 pm

  69. Name: inoue
    Time: Wednesday, October 14, 1998 - 06:32:51 am

  70. Name: M Cakmak
    Time: Wednesday, October 14, 1998 - 12:07:24 am

  71. Name: Nitya Nath Shukla
    Time: Friday, October 16, 1998 - 02:41:13 am
    E-Mail: nitsu@mailcity.com
    Address: 1313,Ratan Lal Nagar, Kanpur-208022

  72. Name: somebody
    Time: Friday, October 16, 1998 - 08:45:02 am
    E-Mail: sykang@cadvax.etri.re.kr
    Address: ETRI, Korea

  73. Name: zqr
    Comments: Is it better and faster?
    Time: Tuesday, October 20, 1998 - 03:13:02 am
    E-Mail: woops
    Address: woops, place

  74. Name: Ogundare Folorunso
    Comments: I am currently in a diploma programme at the centre and I hope to work Atomic motion in crystals for my final project. So the subroutine will be of use to me.
    Time: Saturday, October 24, 1998 - 08:30:32 am
    E-Mail: ogundare@ictp.trieste.it
    Address: International Centre for Theoretical Physics (Diploma-CMP} ,P.O.Box 586, Trieste, Italy

  75. Name: toto
    Time: Sunday, November 1, 1998 - 12:25:23 am

  76. Name: Massimiliano Mazzarolo
    Comments: I plan to use EDIP potential for investigate some aspects of low-energy recoils in silicon. I already use other models like SW, TS with my MD-code.
    Time: Wednesday, November 4, 1998 - 10:11:49 am
    E-Mail: max@osmium.mater.unimi.it
    Address: Dept. of Material Science Universita' degli Studi di Milano Via Emanueli 15 MILANO Italy

  77. Name: x
    Comments: x
    Time: Saturday, November 7, 1998 - 11:48:36 am

  78. Name: Dave Teter
    Comments: Check it out and see how it compares to some other models.
    Time: Sunday, November 8, 1998 - 04:16:37 pm
    E-Mail: teter@virginia.edu
    Address: Dept. of Materials Science University of Virginia Charlottesville, VA 22903

  79. Name: Mohd Khalid Kasmin
    Comments: I am not sure yet. Would like to have a look at it. If possible I might use it together with a molecular dynamics program I am working on right now for studying the structure of tellurite glasses.
    Time: Monday, November 9, 1998 - 05:42:44 am
    E-Mail: khalid@dfiz2.fs.utm.my
    Address: Physics Department, Universiti Teknologi Malaysia, KB 791, 80990 Johor Bahru, Johor, Malaysia

  80. Name: Ladan
    Time: Wednesday, November 11, 1998 - 02:54:58 am

  81. Name: Detlef Stock
    Comments: I plan to check it out and to compare it with other Si potentials with respect to interfaces.
    Time: Wednesday, November 11, 1998 - 03:12:31 am
    E-Mail: pds@rz.uni-jena.de
    Address: Friedrich-Schiller-Universitaet Jena Institut fuer Festkoerperphysik Max-Wien-Platz 1 D-07745 Jena Germany

  82. Name: farid chaouki
    Comments: I will use EDIP force subroutine coupled with MD to calculate the elastic constants of GeC, and determine dynamical properties (diffusion and density of phonos) under pression.
    Time: Saturday, November 14, 1998 - 07:28:57 am
    E-Mail: assn1@yahoo.fr
    Address: Ph.D researcher université de sid-bel-abbes algeria(22000)

  83. Name: benzair
    Comments: I am resaerching in the field of phase transtion in semiconductor materials
    Time: Sunday, November 15, 1998 - 04:59:30 am

  84. Name: Kazuto Kawakami
    Comments: simulation of vacancies in silicon crystal
    Time: Monday, November 16, 1998 - 06:53:58 am

  85. Name: Nick N. Dorozhkin
    Time: Monday, November 16, 1998 - 10:46:13 am
    E-Mail: Dorozhkin@phys.bsu.unibel.by
    Address: Department of Physics Beylorussian State University, Minsk

  86. Name: Mario Rosati
    Time: Thursday, November 19, 1998 - 09:28:01 am
    E-Mail: rosati@caspur.it
    Address: CASPUR Universita' "La Sapienza" P.le A. Moro, 5 00198 ROMA ITALY

  87. Name: Xuan Luo
    Time: Friday, November 20, 1998 - 07:15:17 am

  88. Name: xzq
    Time: Monday, November 23, 1998 - 08:26:41 am
    E-Mail: xuanzq@infoc3.icas.ac.cn

  89. Name: xzq
    Time: Monday, November 23, 1998 - 08:30:30 am
    E-Mail: xuanzq@infoc3.icas.ac.cn

  90. Name: Santanu Ganguly
    Comments: I shall like to look at Silicon clusters as part of my PhD. project.
    Time: Monday, November 23, 1998 - 09:31:56 am
    E-Mail: santanu@nprl.ph.bham.ac.uk
    Address: Nanoscale Physics Research Group School Of Physics & Astronomy University Of Birmingham Edgbaston; Birmingham B15 2TT U.K.

  91. Name: Sergey A. Semerikov
    Time: Thursday, November 26, 1998 - 12:31:40 am

  92. Name: Evelyne Lampin
    Comments: I m searching for reliable interatomic potentials to use in molecular dynamics simuations for Si based systems
    Time: Friday, November 27, 1998 - 11:37:35 am
    E-Mail: Evelyne.Lampin@isen.iemn.univ-lille1.fr
    Address: IEMN - ISEN Avenue Poincare F59652 Villeneuve d'Ascq

  93. Name: Ruth Petz
    Comments: Educational study
    Time: Monday, November 30, 1998 - 02:14:23 am

  94. Name: G. Banini
    Comments: Calulations of interatomic forces in covalent solids possibly including defects structures.
    Time: Wednesday, December 2, 1998 - 06:48:56 pm
    E-Mail: Gkbanini@hotmail.com
    Address: Wolfson College, Cambridge

  95. Name: Luigi Brambilla
    Comments: In a parallel Md code to simulate polycrystalline silicon.
    Time: Thursday, December 3, 1998 - 08:50:07 am

  96. Name: San Qiang Shi
    Comments: To learn the method.
    Time: Friday, December 4, 1998 - 04:18:51 am

  97. Name: Talid Sinno
    Comments: Currently interested in computing point defect thermophysical properties for use in continuum models of silicon crystal growth. Have used SW potential for this with limited success.
    Time: Tuesday, December 8, 1998 - 10:10:45 pm
    E-Mail: sinno@mit.edu
    Address: Dept. of Chemical Engineering M.I.T. 25 Ames St., Bldg 66-472 Cambridge , Ma 02139

  98. Name: Antonio J. R. da Silva
    Comments: Nanophase Si; Machining of Si; Fracture of Si.
    Time: Sunday, December 13, 1998 - 03:39:32 pm

  99. Name: Ahmed LAZREG
    Comments: i'd like to use your potential for the simulation of Borone Nitrides. So i'd like to fit it to my own researchs. i'd like to thank you greatfully for your help. sincere salutations !
    Time: Wednesday, December 16, 1998 - 08:21:29 am

  100. Name: David Robinson
    Comments: Return visit
    Time: Wednesday, December 16, 1998 - 12:25:28 am

  101. Name: Talid Sinno
    Comments: reload...
    Time: Friday, December 18, 1998 - 02:45:30 pm

  102. Name: Noam Bernstein
    Time: Friday, December 18, 1998 - 03:45:27 pm
    E-Mail: noamb@cmt.harvard.edu
    Address: Surely you know this :)

  103. Name: Jarmo Koivusaari
    Comments: Calculations of properties of amorphous carbon
    Time: Sunday, December 20, 1998 - 05:56:00 am

  104. Name: N. Khokhriakov
    Comments: I am trying to make a computer program to simulate carbonization processes
    Time: Monday, December 21, 1998 - 01:35:28 am
    E-Mail: savinsky@uni.udm.ru
    Address: Internet-Center Udmurt University Izhevsk Udmurtia Russia Dr, Theoretical group

  105. Name: angelo
    Time: Friday, December 25, 1998 - 12:21:27 am
    E-Mail: ctpdonbo@sol.racsa.c.cr
    Address: colegio tecnico don bosco san jose costa rica

  106. Name: Shuji Ogata
    Time: Monday, December 28, 1998 - 04:25:42 pm

  107. Name: Wu Jiangtao
    Comments: To simualate the properties of liquids and gases
    Time: Friday, January 1, 1999 - 12:56:22 am
    E-Mail: wujtbox@public.xa.sn.cn
    Address: Division of Thermodynamics & Heat Transfer Xi'an Jiaotong University P.R.China

  108. Name: Jianjun Xie
    Comments: I am not sure yet
    Time: Monday, January 11, 1999 - 12:22:35 am
    E-Mail: xie@viking.lanl.gov
    Address: Los Alamos National Lab

  109. Name: Gopalakrishnan Subramanian
    Comments: I will be incorporating it in a Molecular Dynamics Simulation code.
    Time: Monday, January 11, 1999 - 06:08:08 pm
    E-Mail: gsubram@perranoski.tec.ufl.edu
    Address: University of Florida, Gainesville, Florida

  110. Name: G.Subramanian
    Comments: Will incorporate it in molecular dynamics simulations
    Time: Tuesday, January 12, 1999 - 07:27:06 pm
    E-Mail: gsubram@perranoski.tec.ufl.edu
    Address: University of Florida

  111. Name: Nicholas Cooper
    Comments: Compare with other emperical potentials for modelling amorphous silicon and other silicon structures
    Time: Wednesday, January 13, 1999 - 12:05:00 am
    E-Mail: ncooper@physics.usyd.edu.au
    Address: Madsen Building F09 The University of Sydney NSW 2006 Australia

  112. Name: G.Subramanian
    Comments: in molecular dynamics simulations
    Time: Wednesday, January 13, 1999 - 06:38:04 pm
    E-Mail: gsubram@perranoski.tec.ufl.edu
    Address: University of Florida

  113. Name: Liang Meng Heng
    Comments: Dislocation, epitaxial growth and thermal oxidation
    Time: Thursday, January 14, 1999 - 12:52:45 am
    E-Mail: mmhliang@ntu.edu.sg
    Address: Division of Materials Engineering School of Applied Science Nanyang Technological University Singapore 639798

  114. Name: Normand Modine
    Comments: We plan to use EDIP to test various transition state finding and accelerated dynamics methods.
    Time: Friday, January 15, 1999 - 11:37:35 am

  115. Name: sds
    Time: Monday, January 18, 1999 - 11:39:56 am
    E-Mail: sdsd
    Address: sdsssd

  116. Name: xie xuepeng
    Comments: defects simulation
    Time: Thursday, January 21, 1999 - 01:25:57 am

  117. Name: Santanu Ganguly
    Comments: Simulations for Silicon Clusters.
    Time: Friday, January 29, 1999 - 05:40:38 am
    E-Mail: santanu@nprl.ph.bham.ac.uk
    Address: Nanoscale Physics Research Group University Of Birmingham School Of Physics & Astronomy Edgbaston; Birmingham B15 2TT U.K.

  118. Name: Boo Teck Boon
    Comments: Trying out
    Time: Thursday, Febraury 4, 1999 - 12:22:40 am
    E-Mail: tbboo@pacific.net.sg
    Address: Blk 309 Yishun Ring Rd. #03-1250C S(760309)

  119. Name: Jorge O. Sofo
    Comments: Comparison of this potential with other empirical potentials for Si and C
    Time: Thursday, Febraury 18, 1999 - 01:24:18 pm
    E-Mail: sofo@cab.cnea.gov.ar
    Address: Instituto Balseiro (8400) Bariloche RN Argentina

  120. Name: volz
    Comments: Study of step generation on surfaces
    Time: Tuesday, Febraury 23, 1999 - 04:03:54 am
    E-Mail: volz@let.ensma.fr
    Address: Laboratoire d'Etudes Thermiques BP 109 86960 Futuroscope Cedex

  121. Name: Fabrizio Cleri
    Comments: To test how good it works on amorphous Si problems.
    Time: Tuesday, March 2, 1999 - 10:17:30 am
    E-Mail: cleri@casaccia.enea.it
    Address: ENEA Divisione Materiali Avanzati Centro Ricerche Casaccia CP 2400 00100 Roma AD (Italy)

  122. Name: JIN Z.H.
    Comments: I am going to study melting properties of clusters, wires, as well as grain boundaries in bulk solids for Si etc, using more accurate potentials, like EDIP.
    Time: Friday, March 5, 1999 - 09:39:48 am
    E-Mail: zhjin@imr.ac.cn
    Address: State Key Lab of RSA Inst. Met. Res. Chinese Aca. Sci. Wenhua Rd. 72, Shenyang 110015, China

  123. Name: Chun-Rong Fu
    Time: Saturday, March 6, 1999 - 09:15:40 am

  124. Name: yes
    Time: Wednesday, March 10, 1999 - 01:13:50 pm
    E-Mail: yes@there.com

  125. Name: Shin-ichi Sawada
    Time: Friday, March 12, 1999 - 06:40:08 am

  126. Name: test
    Time: Wednesday, March 17, 1999 - 02:47:30 pm

  127. Name: M. K. Kasmin
    Comments: This my second download. I lost the one downloaded a few months back due to hard disk crash.
    Time: Thursday, March 18, 1999 - 10:19:41 am

  128. Name: test
    Time: Monday, March 22, 1999 - 07:36:05 am
    E-Mail: test@com

  129. Name: P. uncho
    Time: Sunday, April 4, 1999 - 12:03:37 am
    E-Mail: u2@pi.u-aizu.yo.ac.jp

  130. Name: Yury K.Timoshenko
    Comments: I plan to test the EDIP for calculations of atomic coordinates around intrinsic defects in Si
    Time: Tuesday, April 13, 1999 - 04:18:01 pm
    E-Mail: yury@tim.vsu.ru
    Address: Department of Physics, Voronezh State University, 394693 Voronezh, Russia

  131. Name: Yury K.Timoshenko
    Comments: I plan to test the EDIP for calculations of atomic coordinates around intrinsic defects in Si
    Time: Tuesday, April 13, 1999 - 04:54:22 pm

  132. Name: Salvy Peter Russo
    Comments: I have written my own MD code using Stillinger-Weber and Brenner potentials. I'd like to test the EDIP routine against my own rountines and compare.
    Time: Friday, April 16, 1999 - 02:52:21 am
    E-Mail: salvy.russo@rmit.edu.au
    Address: Department of Applied Physics RMIT University GPO Box 2476V Melbourne, 3001 Australia

  133. Name: Q. R. Zheng
    Comments: I will try to use the potential for carbon and compare it with Tersoff's potential to find out which one is fast.
    Time: Monday, April 19, 1999 - 11:22:45 pm
    E-Mail: qrzheng@mimi.cnc.ac.cn
    Address: Department of Physics, Graduate School, Chinese Academy of Science, Beijing 100039, China

  134. Name: Luna
    Comments: To seen
    Time: Saturday, April 24, 1999 - 05:36:05 pm
    E-Mail: jaluna@olemail.com
    Address: 75016 Paris

  135. Name: Tae Gyoung Kim
    Time: Wednesday, April 28, 1999 - 07:53:02 am
    E-Mail: gyoung92@hotmail.com
    Address: 1162-1 Sujung Dong Dong Gu Pusan, ROK

  136. Name: Garrett H. Sin
    Comments: Will try it out in our parallel MD code to look at voids.
    Time: Monday, May 3, 1999 - 08:23:07 am

  137. Name: S.G. Srinivasan
    Comments: Check out the potential for study of defect structure in Covalent Solids
    Time: Monday, May 3, 1999 - 07:45:14 pm

  138. Name: Dr.Eyvaz I.Isaev
    Time: Wednesday, May 5, 1999 - 06:38:05 am

  139. Name: Yikuan Wang
    Comments: First I will get to know the subroutine. Then I will try to use it in materials of interest. When I come to a problem, I will ask for your great help. Thank you very much!
    Time: Thursday, May 13, 1999 - 08:38:17 am
    E-Mail: ykwang@cugb.edu.cn
    Address: Physics Teaching Office China University of Geosciences Beijing 100083 P. R. China

  140. Name: Detlef Stock
    Comments: reload...
    Time: Friday, May 21, 1999 - 05:43:09 am
    E-Mail: pds@rz.uni-jena.de
    Address: FSU Jena,Inst. f. Festkörperphysik, Max-Wien-Platz 1, D-07743 Jena, Germany

  141. Name: siryu
    Comments: I am interested in Carbon Nanutube.
    Time: Wednesday, May 26, 1999 - 09:49:48 pm
    E-Mail: siryu@semilab3.ee.cau.ac.kr

  142. Name: seyfettin cakmak
    Time: Saturday, May 29, 1999 - 05:18:35 am
    E-Mail: scakmak@fef.sdu.edu.tr
    Address: Suleyman Demirel University Physics Department 32260, Isparta, TURKEY

  143. Name: Sefa Dag
    Comments: I want to use this program for growth mechanism of Si(100) surface
    Time: Tuesday, June 1, 1999 - 08:02:12 am
    E-Mail: sefa@fen.bilkent.edu.tr
    Address: Department of physics Bilkent University Ankara 06533 TURKEY

  144. Name: ll
    Time: Wednesday, June 2, 1999 - 02:48:19 am

  145. Name: Lo Veng Cheong
    Time: Thursday, June 10, 1999 - 08:58:32 pm
    E-Mail: apavclo@polyu.edu.hk
    Address: The Hong Kong Polytechnic University Dept of Applied Physics Kowloon, Hong Kong China

  146. Name: D.Balamurugan
    Comments: I am Planning to work on Silicon cluters. To find their ground state goemetries and properties. And also planning to see the effect of these clusters on the bulk.
    Time: Friday, June 11, 1999 - 02:30:22 am
    E-Mail: balad@iitk.ac.in
    Address: D.Balamurugan,Ph.d Scholor, department of Physics, Indian Institute of Technology, kanpur, India - 208 016.

  147. Name: Nikolaj Moll
    Comments: Using it for accelrated molecular dynamics.
    Time: Monday, July 26, 1999 - 10:47:57 am

  148. Name: ali
    Time: Wednesday, August 4, 1999 - 09:08:38 am

  149. Name: Hidenari Baba
    Comments: I'd like to check or tune my program. I've studied fracture and nano-indentation of silicon.
    Time: Monday, August 9, 1999 - 09:36:24 pm

  150. Name: Mahmud El_Gohary
    Comments: Master research in the field of Molecular dynamic Simulation
    Time: Sunday, September 12, 1999 - 09:22:42 am
    E-Mail: emahmud@hotmail.com
    Address: Egypt, Alexandria, Vectoria, Khalf 50 Gammal Abd ElNasser St. Postal No 21411 Appt. No 8

  151. Name: Anil Gannepalli
    Comments: I'm performing molecular dynamics simulations for a Si tip and Si substrate system. I would be employing the EDIP potential to study the changes taking place in the system during nanoindentation.
    Time: Monday, September 20, 1999 - 02:24:46 am
    E-Mail: ganil@iastate.edu
    Address: 2157 Sweeney Hall Department of Chemical Engg. Iowa State Univ. Ames, IA 50011

  152. Name: Mahmud El_Gohary
    Comments: Comparison with glue model.
    Time: Tuesday, September 21, 1999 - 06:34:59 am
    E-Mail: emahmud@hotmail.com
    Address: Egypt, Alexandria, Vectoria, Khalf 50, Gammal Abdulnasser St. Postal no. 21411 Appt. No. 8

  153. Name: Yury Turkin
    Comments: Comparison of this potential with other empirical potentials for Si and C
    Time: Friday, September 24, 1999 - 01:46:17 pm

  154. Name: Risman Adnan
    Comments: To calculate the DOS of a-SiC alloy
    Time: Sunday, October 3, 1999 - 06:22:35 pm
    E-Mail: risman_a@hotmail.com
    Address: Risman Adnan Margonda Raya Gang Madrasah No.18 Depok, Pondok Cina 16424 Jakarta, INDONESIA

  155. Name: ktan
    Comments: Build interatomic potentials for semiconductor MD study structure and surface properties
    Time: Sunday, October 17, 1999 - 09:48:56 pm

  156. Name: Y.Mu
    Time: Tuesday, October 26, 1999 - 08:29:02 am
    E-Mail: ygmu@hotmail.com
    Address: D-91058, Erlangen Germany

  157. Name: ygmu
    Time: Thursday, October 28, 1999 - 02:49:36 am
    E-Mail: ygmu@hotmail.com
    Address: Schottkystrass 10 Erlangen Germany

  158. Name: pinco
    Comments: aaaa
    Time: Friday, October 29, 1999 - 09:42:14 am

  159. Name: Gabriela Stoleru
    Comments: Molecular dynamics simulation of epitaxial growth of quantum dots, if it turns out I could use it for GaAs.
    Time: Tuesday, November 2, 1999 - 12:58:51 am
    E-Mail: vgp5e@virginia.edu
    Address: University of Virginia Electrical Engineering Department, Thornton Hall C-235 Charlottesville, VA-22903 USA

  160. Name: Hans
    Comments: Testing whether we could use it for simulation of crystal growth and twinnig in CVD prozesses
    Time: Friday, November 12, 1999 - 04:14:55 am
    E-Mail: jentsch@ww.uni-erlangen.de

  161. Name: Emil Briggs
    Comments: I am interested in doing some comparisons of forces generated from classical potentials with those from an ab-initio approach.
    Time: Saturday, November 13, 1999 - 07:35:18 am
    E-Mail: briggs@tick.physics.ncsu.edu
    Address: Dept. of Physics North Carolina State University

  162. Name: Geoff Leach
    Comments: Comparison with Stillinger-Weber and other empirical potentials.
    Time: Tuesday, November 16, 1999 - 01:59:40 am
    E-Mail: gl@cs.rmit.edu.au
    Address: Department of Computer Science RMIT Bowen Lane Melbourne Victoria Australia

  163. Name: Stefano Saba
    Comments: To simulate the relaxation of an interface between the Silicon and another Silicon base semiconductor, and to observe the formation of dislocations.
    Time: Tuesday, November 16, 1999 - 02:17:44 pm
    E-Mail: joepinoz@tiscalinet.it
    Address: v. Sebastiano del Piombo,3 20149, Milano Italia Universita' degli Studi di Milano

  164. Name: Stefano Saba
    Comments: jj
    Time: Wednesday, November 17, 1999 - 08:09:41 am

  165. Name: Franco Valentinotti
    Comments: to investigate about virial computation for a many-body potentials
    Time: Thursday, November 18, 1999 - 09:52:15 am
    E-Mail: valentin@mater.unimib.it
    Address: Universita' MILANO BICOCCA

  166. Name: Ian Seely
    Comments: Course project on liquid simulations
    Time: Tuesday, November 30, 1999 - 12:39:46 am

  167. Name: Andrea Lazzeri
    Comments: I want to know more about this method.
    Time: Friday, December 3, 1999 - 07:27:02 pm

  168. Name: siryu
    Comments: I am interested in carbon nanotube
    Time: Wednesday, December 8, 1999 - 11:28:22 pm
    E-Mail: siryu@semilab.ee.cau.ac.kr
    Address: seoul

  169. Name: henri minos
    Comments: to calculate charge densities and physico-electrical properties in the amorphous silicon (a-si:H) and simulate larger(a-si:H) atomic systems .
    Time: Sunday, December 12, 1999 - 08:29:30 am
    E-Mail: hpminos@chat.ru
    Address: 83 profsaouznaya street .corpus 3.room 606/117279 moscow.

  170. Name: Alexander Belov
    Comments: MD studies of extended defects in Si
    Time: Thursday, December 16, 1999 - 11:11:49 am
    E-Mail: a.belov@fz-rossendorf.de
    Address: Institute of Ion Beam Physics and Materials Research, FZ-Rossendorf, Postfach 510119, D-01314 Dresden

  171. Name: F. Gao
    Comments: I am trying to simulating defect migration in Si or SiC.
    Time: Monday, December 20, 1999 - 12:46:50 am
    E-Mail: fei58@liv.ac.uk
    Address: Materials Science and Engineering, The Department of Engineering, The University of Liverpool, Liverpool, L68 3GH UK

  172. Name: Jiang Long Wang
    Comments: molecular diffusion simulation
    Time: Sunday, January 9, 2000 - 04:58:22 am
    E-Mail: jlwang@theory.issp.ac.cn
    Address: Institute of Solid State Physics Academia Sinica Hefei, Anhui, P. R. China Zip 230031

  173. Name: Quanhong YANG
    Time: Thursday, January 20, 2000 - 12:10:04 am
    E-Mail: Qhyang@mail.sy.ln.cn
    Address: Institute of Metal Research Chinese Academy Of Sciences 72 Wenhua Road Shenyang 110015, P.R.China

  174. Name: Risman Adnan
    Comments: it is about MD simulation in amorphous phase
    Time: Wednesday, January 26, 2000 - 07:53:24 am
    E-Mail: risman_a@hotmail.com
    Address: Jl.Margonda Raya Gang Madrasah No.18 Depok, 16424 INDONESIA

  175. Name: Fred Orock
    Comments: I would like to use EDIP to study the deposition of silicon ions (atoms) on glass substrate.
    Time: Friday, Febraury 4, 2000 - 11:58:24 am

  176. Name: richard vink
    Comments: Use EDIP to generate samples of a-Si
    Time: Tuesday, Febraury 8, 2000 - 08:59:28 am

  177. Name: Politano Olivier
    Comments: Computation of elastic properties of nano plates
    Time: Tuesday, Febraury 8, 2000 - 05:31:29 pm
    E-Mail: politano@cmt.harvard.edu
    Address: Departement of Physics Harvard University Cambridge, MA 02138

  178. Name: Risman Adnan
    Comments: Learn about it.
    Time: Wednesday, Febraury 9, 2000 - 12:41:10 am
    E-Mail: risman_a@hotmail.com
    Address: Risman Adnan Department of Physics University of Indonesia DEPOK, 16424 INDONESIA

  179. Name: A Lien
    Comments: Qwerty io pasdf ghjk
    Time: Friday, Febraury 18, 2000 - 02:03:11 am
    E-Mail: webmaster@cmtek2.harvard.edu
    Address: ZXCV, Mkiopl

  180. Name: Chachi Rojas Ayala
    Comments: first, I revise EDIP then, use to include in Binary alloys simulations
    Time: Monday, Febraury 21, 2000 - 01:31:12 pm
    E-Mail: d220116@unmsm.edu.pe
    Address: Ciudad Universitaria, Pabellón de Ciencias Físicas. av. venezuela Cdra 34. Lima 1 Dirección Postal: Apartado 14-0149 Telefax (51) 1-452-1343 Lima Perú

  181. Name: Choo Zhi Min
    Comments: for Silicon dislocation simulation
    Time: Thursday, Febraury 24, 2000 - 12:54:47 am

  182. Name: aourag hafid
    Comments: molecular dynamics in Si
    Time: Thursday, Febraury 24, 2000 - 01:23:25 am
    E-Mail: haourag@mail.univ-sba.dz
    Address: 22 rue hoche sidi-bel-abbes 22000- Algeria

  183. Name: seyfettin cakmak
    Comments: computational physics
    Time: Monday, Febraury 28, 2000 - 02:41:51 am
    E-Mail: scakmak@fef.sdu.du.tr
    Address: Suleyman Demirel University Physics Department 32260, Isparta, Turkey

    ************************ END OF AUTOMATIC RECORD ************************
  184. Name: Stefan Goedecker
    Comments: I want to use EDIP for tests of different atomic relaxation methods.
    Time: , 15 Sep 2000 13:40:39
    E-Mail: sgoedecker@cea.fr
    Address: CEA Grenoble, France

  185. Name: Alexandre Cuenat
    Comments: to study sputtering of Si surface at the 1 keV range.
    Time: 22 Dec 2000 13:53:13
    E-Mail: cuenat@fas.harvard.edu
    Address: DEAS, Harvard

  186. Name: Laurent Pizzagalli
    Comments: I plan to test it in comparison with SW and Tersoff potential for dislocation core structure.
    Time: 1 Mar 2001 16:01:16
    E-Mail: pizza@univ-poitiers.fr
    Address: Laboratoire de Métallurgie Physique, Université de Poitiers, SP2MI, BP 30179, 86960 Futuroscope Cedex, FRANCE

  187. Name:Catherine Bishop
    Comments: I'm using EDIP to explore the grain boundary energy in silicon as a function of misorientation and inclination of the boundary, i.e. I want to produce the grain boundary Wulff shape in silicon using MD.
    Time: 20 Mar 2001 08:55:24
    E-Mail: cbishop@mit.edu
    Address: DMSE, MIT

  188. Name:Manoj Warrier
    Comments: I downloaded the file just to check out its inclusion in a MD code I am writing to study Si sputtering for incident Si ions in the energy range 10-100 eV as part of my Ph.D work. Time: Tue, 26 Mar 2002 15:24:24
    E-Mail: manoj.warrier@ipp.mpg.de
    Address: Stellaratortheorie, Max-Planck Institut Fur Plasmaphysik
    TeilInstitut Greifswald Wendelsteinstrasse 1
    D-17491 Greifswald Germany

  189. Name:Erik Albenze
    Comments I am currently studying explosive crystallization in Si (and Ge). Time Thu Apr 18 09:21:16 EDT 2002
    Address: Cornell University

  190. Name:Yu-Tsung Chiu
    Comments silicon melting & recrystallization Time Tue, 28 May 2002 11:46:43
    Address: Materials Research Laboratories, Industrial Technology Research Institute, S100, MRL/ITRI bldg.77, 195 Sec. 4, Chung Hsing Rd. Chutung, Hsinchu, Taiwan 31040, ROC

  191. Name:Harley T. Johnson
    Comments:ion bombardment Time Wed, 2 Apr 2003 10:34:09
    Address: Mechanical & Industrial Engineering, University of Illinois at Urbana-Champaign

  192. Name:Qiang Lu
    Comments: to study how the randomness in atomic lattice structure (including defects distribution) affects the behaviors of material fracture. Time Tue, 01 Jul 2003 14:47:42
    Address: Civil & Environmental Engineering Department University of Delaware Newark, DE, 19711