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Crystal Growth

Featured Equipment

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The Crystal Growth shared experimental facility in the CMSE is a resource available to users within and outside of MIT community.  We have optical floating-zone furnaces, top-seeded growth furnaces, 3-zone tube furnace, box furnaces, arc melting furnace and cutting/polishing equipments to satisfy the needs of crystal growth. Facilities for characterization of crystals include SQUID magnetometers and ICP-AES. The project can be arranged as a contract to work or trained researchers to become qualified facility users.

Personnel

Dr. Shaoyan Chu, Research Scientist
Office: 13-3134
Phone: (617) 253-0054
Fax: (617) 258-6478
E-mail:  sc79@mit.edu

Patrick Boisvert, Technical Associate
Office: 13-1018  
Office phone: (617) 253-3317
Lab: 13-3124   
Lab phone: (617) 258-9140
Fax: (617) 258-6478
E-mail: pboisver@mit.edu

Location:

Building 13, Rooms 3120, 3124, 3136, 3143 (3 rd floor) and Room 4148 (4th floor)

Instruments available:

Crystal Systems Inc. FZ-T 4000-H Optical Floating Zone Furnace
This system employs four mirrors, creating highly uniform and stable temperature distribution conditions.   Maximum operating temperature is 2100°C. Typical operating temperature is 1800°C. Maximum crystal growth length is 100mm. Growth speed is 0.2 ~ 20mm/hr. Maximum crystal diameter is 15mm.Maximum atmospheric gas pressure is 2 kg/cm*2.

Crystal Systems Inc. FZ-T 12000-X-S Optical Floating Zone Furnace
This system employs the four mirrors type furnace, which enables the growth of high quality single crystals creating extremely uniform and stable temperature distribution conditions. Maximum operating temperature is 2800° C Typical operating temperature is 2400° C. Maximum crystal growth length is 100mm. Growth speed is 0.18 ~ 18mm/hr.

Quantum Design AC and DC Magnetic Property Measurement System (DC/AC SQUID)
This apparatus is capable of measuring magnetic moments in the range +/-2 emu to a resolution of 10-7 emu. Measurements may be obtained in the temperature range 1.8 to 400 K with magnetic fields from -7 Tesla to +7 Tesla. The system is fully automated, accepting flexible user-programmed parameters that allow for unattended operation day and night.

Cutting and Polishing equipment

Crystal cutting and polishing equipment in our SEF provide complete surface preparation for crystal alignment, lapping and polishing. With the help of 2-Axis Goniometer, we can cut crystal precisely along a fixed orientation determined by Laue picture. The lapping fixture will control the thickness to be polished down to the micron size.

Equipment Includes:

Furnaces

The highest temperature of our resistance type furnace is 1700C, which uses MoSi2 heating element with computer control. The temperature stability and ramping rate is extremely stable and thus suitable for crystal pulling and slow cooling crystal growth methods. All of our furnaces are programmable and gas exchange is allowed in the tube-annealing furnace.

Equipment Includes:

For MIT Users
For Non-MIT Users
Instruments
Materials Analysis
Electron Microscopy
Crystal Growth
X-Ray Diffraction
Techniques
Booking
Equipment Status
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