Please submit your 200 word abstract to hwcvd5@gmail.com in the form of two attachments. (1) a word file and (2) a pdf containing the same text.

See Guidelines for Preparing Manuscripts

Lecturers
Please bring your presentation on a memory stick and upload it during the break before your session to the laptop PC with PowerPoint, which is available in the lecture room. The chairperson of your session will be there to meet you.

Poster Presenters
Please set up your poster either before the conference dinner on Friday, between 17:15-19:00 or anytime after 7:00 on Saturday.  An area of 1.3 meters x 1.3 meters feet is available for each poster. Please affix your poster on the board labeled with your abstract number.  Food and refreshments will be provided. Note that there is only one poster session on Saturday evening.

Papers are solicited in all fields of HWCVD (Cat-CVD), initiated CVD (iCVD), and Hot Filament CVD, as suggested below:

• Process Fundamentals: Catalytic filament chemistry, initiation mechanisms, deposition chemistry, in situ analysis, and monitoring technologies
• Apparatus: technology of temperature control, cleaning and etching, system design, filament issues, particle generation
• Film Properties: Film properties: amorphous silicon, micro- and nanocrystalline silicon, epi-Si, poly-silicon, silicon alloys, dielectrics (SiNx, SiOx, SiC), passivation coatings, thin film diamond, hard coatings, nanostructured carbon, carbon nanotubes, polymers
• Novel Materials: Novel materials: films with unique properties yielding unexpected results
• Devices: Thin Film Transistors, Displays, Solar Cells, Light Emitting Diodes, Field Emission Displays, applications to GaAs devices, photosensors, photoreceptors, photonic structures, organic devices, micromechanical structures
• New Developments: dry etching, surface modification, passivation, cleaning interior of vacuum equipment, other surprise developments
• Transfer to Industry: scaling up to large areas, reproducibility, filament lifetime, high deposition rate, gas utilization, replacement of greenhouse gases such as SF6 and CF4 in dry etching processes