Inside Quantum Devices
Dr. Crispin H. W. Barnes, Solid-state Physics Group, Cambridge Univ., England
Tue Jan 28, 09am-12:00pm, NW14-1112
No enrollment limit, no advance sign up
Participants requested to attend all sessions (non-series)
Prereq: 2nd-year Calculus; Quantum Mechanics; Solid-State Physics
This course will cover the following aspects of quantum devices:
(1) Band engineering / electrostatic confinement to reduce dimensionality 3->2->1->0; Landauer formalism for conductance; transport properties of 1D systems and quantum dots; Aharonov-Bohm effect; non-invasive measurement.
(2) Quantum Hall effect; edge states; quasi-particles; fractional quantum Hall effect / edge states; quantum anti-dots.
(3) The prospects for a quantum information processor based on these phenomena.
Contact: Timothy F. Havel, NW14-2218, 253-8309, tfhavel@mit.edu
Sponsor: Cambridge-MIT Institute
Latest update: 11-Dec-2002
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