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Project Members:

Ghislain Granger

Iuliana Radu



Research Project:
Magnetic Field and Temperature Dependence of Singlet-Triplet Transition in a Single-Electron Transistor

Background Work

Our group studies electron transport in a single-electron transistors (SETs), or quantum dots, or "Artificial Atoms" (See: Marc Kastner's article: Part 1; Part 2). We observed Coulomb blockade "diamonds" in the differential conductance as a function of the gate voltage and the drain-source voltave in SETs.

"Effects of Quantum Levels on Transport Through a Coulomb Island", E. B. Foxman, P. L. McEuen, U. Meirav, N. S. Wingreen, Y. Meir, P. A. Belk, N. R. Belk, M. A. Kastner, and S. J. Wind, Phys. Rev. B 47, 10020-10023(1993)


Early Kondo Work

"Kondo Effect in a Single-Electron Transistor", D. Goldhaber-Gordon, H. Shtrikman, D. Mahalu, D. Abusch-Magder, U. Meirav, and M. Kastner, Nature, Vol 391, 156 (1998)

Due to the interaction between the localized electrons on the quantum dot and the delocalized electrons in the source and drain of the sample, a nonzero spin on the quantum dot gets screened due to the formation of a many-body singlet, i.e. the Kondo Effect

The above figure is obtained from D. Goldhaber-Gordon's article. The vertical white line in the middle of the figure indicates a peak of differential conductance inside a "diamond", corresponding to a zero-bias peak for an odd number of electrons inside the quantum dot.

Recent Work

"Singlet-triplet transition in a single-electron transistor at zero magnetic field", A. Kogan, G. Granger, M. A. Kastner, D. Goldhaber-Gordon, and H. Shtrikman Phys. Rev. B 67, 113309 (2003)

When there is an odd number of electrons in the quantum dot, we generally see the Kondo peak at zero drain-source bias, as in the figure above. For an even number of electrons, we sometimes observe Kondo peaks corresponding to the triplet excited state. When we increase the gate voltage, the triplet excitation energy decreases until a new zero-bias Kondo peak is formed, corresponding to a Kondo-screened triplet ground state. In other words, the change of the shape of the potential that confines the quantum dot in the SET due to the change in gate voltage results in a singlet-triplet transition in zero magnetic field.


Future Work

Magnetic Field and Temperature Dependence

Our next goal is to investigate the magnetic field and temperature dependence of the singlet-triplet transition in order to test theoretical predictions (see article "Singlet-Triplet Transition in Lateral Quantum Dots: A Numerical Renormalization Group Study", W. Hofstetter and G. Zarand Phys. Rev. B 69, 235301 (2004)).

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