Kevin Robert Bagnall




Papers in Refereed Journals

  1. Experimental characterization of the thermal time constants of GaN HEMTs via micro-Raman thermometry

    K. R. Bagnall, O. I. Saadat, S. Joglekar, T. Palacios, and E. N. Wang

    IEEE Transactions on Electron Devices, vol. 64, pp. 2121-2128, May 2017.

  2. Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors

    K. R. Bagnall, C. E. Dreyer, D. Vanderbilt, and E. N. Wang

    Journal of Applied Physics, vol. 120, p. 155104, Oct. 2016.

  3. Contributed review: experimental characterization of inverse piezoelectric strain in GaN HEMTs via micro-Raman spectroscopy

    K. R. Bagnall and E. N. Wang

    Review of Scientific Instruments, vol. 87, p. 061501, Jun. 2016.

  4. Design and modeling of membrane-based evaporative cooling devices for thermal management of high heat fluxes

    Z. Lu, T. Salamon, S. Narayanan, K. R. Bagnall, D. Hanks, D. Antao, B. Barabadi, J. Sircar, M. E. Simon, and E.N. Wang

    IEEE Transactions on Components, Packaging, and Manufacturing Technology, vol. 6, no. 7, pp. 1056-1065, Jun. 2016.

  5. Analytical solution for temperature rise in complex, multilayer structures with discrete heat sources

    K. R. Bagnall, Y. S. Muzychka, and E. N. Wang

    IEEE Transactions on Components, Packaging, and Manufacturing Technology, vol. 4, no. 5, pp. 817-830, May 2014.

  6. Application of the Kirchhoff transform to thermal spreading problems with convection boundary conditions

    K. R. Bagnall, Y. S. Muzychka, and E. N. Wang

    IEEE Transactions on Components, Packaging, and Manufacturing Technology, vol. 4, no. 3, pp. 408-420, Mar. 2014.

  7. Thermal spreading resistance and heat source temperature in compound orthotropic systems with interfacial resistance

    Y. S. Muzychka, K. R. Bagnall, and E. N. Wang

    IEEE Transactions on Components, Packaging, and Manufacturing Technology, vol. 3, no. 11, pp. 1826-1841, Nov. 2013.

  8. Gas adsorption characteristics of metal organic frameworks via quartz crystal microbalance (QCM) techniques

    A. Venkatasubramanian, M. Navaei, K. R. Bagnall, K. C. McCarley, S. Nair, and P. J. Hesketh

    Journal of Physical Chemistry C, vol. 116, pp. 15313-15321, 2012


Conference Papers and Presentations

Peer-reviewed Conference Papers

  1. K. R. Bagnall and E. N. Wang, "Transient thermal dynamics of GaN HEMTs," Proceedings of the 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), Las Vegas, NV, May 2016. Paper link

  2. S. Somasundaram, K. R. Bagnall, S. Adera, B. He, M. Wei, C. S. Tan, and E. N. Wang, "Detailed thermal resistance model for characterization of the overall thermal conductivity of a flat heat pipe," Proceedings of the 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), Las Vegas, NV, May 2016. Paper link

  3. K. R. Bagnall, O. I. Saadat, T. Palacios, and E. N. Wang, "Analytical thermal model for HEMTs with complex epitaxial structures," Proceedings of the 14th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), Orlando, FL, May 27-30. Paper link

  4. D. F. Hanks, Z. Lu, K. R. Bagnall, S. Narayanan, R. Raj, R. Enright, and E. N. Wang, "Nanoporous evaporative device for advanced electronics thermal management," Proceedings of the 14th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), Orlando, FL, May 2014. Paper link

Conference Presentations

  1. K. R. Bagnall, C. E. Dreyer, D. Vanderbilt, and E. N. Wang, "Electric field dependence of optical phonon frequencies in wurtzite GaN," to be presented at the Materials Research Society (MRS) Fall Meeting, Boston, MA, Nov. 2016.

  2. R. M. Radway, K. R. Bagnall, E. N. Wang, and T. Palacios, "Near-junction thermal management of GaN-on-SiC HEMTs via wafer bonding," International Workshop on Nitride Semiconductors, Orlando, FL, Oct. 2016.

  3. C. Foy, K. R. Bagnall, M. E. Trusheim, A. Lauri, E. N. Wang, and D. R. Englund, "Imaging current distributions and temperature profiles in GaN HEMTs using nitrogen vacancy centers in nanodiamonds," Conference on Lasers and Electro-Optics (CLEO), San Jose, CA, Jun. 2016.

  4. D. F. Hanks, J. Sircar, Z. Lu, D. S. Antao, K. R. Bagnall, B. Barabadi, T. R. Salamon, and E. N. Wang, "High heat flux evaporative nanoporous silicon membrane device for advanced thermal management," Hilton Head Workshop 2016, Hilton Head Island, SC, Jun. 2016.

  5. K. R. Bagnall, S. Joglekar, C. Dreyer, D. Vanderbilt, T. Palacios, and E. N. Wang, "Experimental characterization of inverse piezoelectric strain in GaN HEMTs," Materials Research Society (MRS) Fall Meeting, Boston, MA, Nov. 2015.

  6. B. Barabadi, K. R. Bagnall, Y. Zhang, and T. Palacios, "High resolution temperature measurement of GaN HEMTs via thermoreflectance thermography," Materials Research Society (MRS) Fall Meeting, Boston, MA, Nov. 2015.

  7. K. R. Bagnall, O. I. Saadat, S. J. Joglekar, B. Barabadi, T. Palacios, and E. N. Wang, "Important considerations in thermal modeling and their impact on optimization of GaN HEMTs," International Workshop on Nitride Semiconductors, Wroclaw, Poland, Aug. 2014.

  8. K. R. Bagnall, T. Fujishima, O. I. Saadat, Y. Nam, T. Palacios, and E. N. Wang, "Quantitative analysis of heat generation in GaN-based electronics based on electro-thermal modeling," ASME Summer Heat Transfer Conference, Minneapolis, MN, Jul. 2013.

  9. K. R. Bagnall, Y. S. Muzychka, and E. N. Wang, "Kirchhoff transformations for conduction problems with heterogeneous temperature-dependent thermal conductivity relationships," ASME Summer Heat Transfer Conference, Minneapolis, MN, Jul. 2013.

  10. K. R. Bagnall, O. I. Saadat, T. Fujishima, Y. Nam, T. Palacios, and E. N. Wang, "Electro-thermal modeling of heat generation in AlGaN/GaN HEMTs," International Workshop on Nitride Semiconductors, Sapporo, Japan, Oct. 2012.

  11. O. I. Saadat, K. R. Bagnall, T. Fujishima, D. Piedra, J. R. Lachapelle, E. N. Wang, and T. Palacios, "Schottky diode based in-situ temperature sensors for AlGaN/GaN HEMTs," International Workshop on Nitride Semiconductors, Sapporo, Japan, Oct. 2012.

  12. Y. Zhang, M. Sun, T. Fujishima, K. R. Bagnall, Z. Liu, E. N. Wang, and T. Palacios, "Thermal performance of GaN vertical and lateral power transistors," International Workshop on Nitride Semiconductors, Sapporo, Japan, Oct. 2012.

  13. P. Saunier, K. R. Bagnall, T.-S. Chou, and H.-Q. Tserng, "Can 40 W/mm be achieved...and will it be useful?," IEEE International Microwave Symposium, Montreal, Canada, Jun. 2012.

  14. H. Stalford and K. Bagnall, "On-chip 3-D MEMS micro-robot and its potential applications," Commercialization of Micro and Nano Systems Conference, Puerta Vallarta, Mexico, Sept. 2008.

M.S. Thesis

Device-level Thermal Analysis of GaN-based Electronics

June 2013

Available at MIT DSpace


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