Journal Publications:
  1. A. Khakifirooz, S. Haji, and S. S. Mohajerzadeh, "UV-assisted nickel-induced crystallization of amorphous silicon," Thin Solid Films, vol. 383, pp. 241-243, Feb. 2001.
  2. A. Khakifirooz, S. S. Mohajerzadeh, and S. Haji, "Field-assisted metal-induced crystallization of amorphous silicon films,"J. Vacuum Science and Technology A, vol. 19, no. 5, pp. 2453-2455, Sept./Oct., 2001.
  3. A. Khakifirooz, S. Haji, S. S. Mohajerzadeh, R. Shafiiha, and E. Asl Soleimani, "Piezoresistive thin-film germanium strain gauges with improved sensitivity," Sensors and Materials.
  4. L. Rezaee, A. Khakifirooz, and S. S. Mohajerzadeh, "Low-temperature ultraviolet-assisted metal-induced crystallization of silicon on glass," J. Non-Crystalline Solids, vol. 303, no. 2, pp. 232-236, May 2002.
  5. L. Rezaee, S. S. Mohajerzadeh, and A. Khakifirooz, "Fabrication of poly-Si TFT's on glass with a novel method of back-reflecting low-temperature UV-assisted nickel-induced crystallization," Solid-State Electronics, vol. 47, pp. 361-366, 2003.
  6. B. Hekmatshoar, D. Shahrjerdi, S. Mohajerzadeh, A. Khakifirooz, A. Goodarzi, and M. Robertson, "Low temperature crystallization of germanium on plastic by externally applied compressive stress," J. Vacuum Science Technology A , vol. 21, no. 3, pp. 752-755, 2003.
  7. A. Khakifirooz and D. A. Antoniadis, "On the electron mobility in ultrathin SOI and GOI," IEEE Electron Device Lett., vol. 25, no. 2, pp. 80-82, Feb. 2004.
  8. D. Shahrjerdi, B. Hekmatshoar, S.S. Mohajerzadeh, A. Khakifirooz, and M. Robertson, "High mobility poly-Ge thin-film transistors fabricated on flexible plastic substrates at temperatures below 130oC," J. Electronic Materials, vol. 33, no. 4, pp. 353-357, Apr. 2004.
  9. B. Arvan, A. Khakifirooz , R. Tarighat, S. Mohajerzadeh, A. Goodarzi, E. Asl. Soleimani and E. Arzi, "Atmospheric pressure chemical vapor deposition of titanium dioxide films from TiCl4," Materials Science and Engineering B , vol. 109, no. 1-3, pp. 17-23, 2004.
  10. B. Hekmatshoar, D. Shahrjerdi, S. Mohajerzadeh, A. Khakifirooz, M. Robertson, A. Tonita, and J. C. Bennett, "Low-temperature stress-assisted germanium-induced crystallization of silicon-germanium alloys on flexible polyethylene terephtalate substrates," J. Vac. Sci. Tech. A, vol. 22, no. 3, pp. 856-858, 2004.
  11. D. Shahrjerdi, M. Fathipour, B. Hekmatshoar, and A. Khakifirooz, "A lateral structure for low-cost fabrication of COOLMOSTM," Solid-State Electronics, vol. 48, no. 10-11, pp. 1953-1957, 2004.
  12. M. Fathipour, E. Fathi, B. Afzal, and A. Khakifirooz, "An improved shift-and-ratio Leff extraction method for MOS transistors with halo/pocket implants," Solid-State Electronics, vol. 48. no. 10, pp. 1829-1832, 2004.
  13. D. Shahrjerdi, B. Hekmatshoar, A. Khakifirooz, and A. Afzali-Kusha, "Optimization of the VT-control method for low-power ultra-thin double-gate SOI logic circuits," Integration, vol. 38, no. 3, pp. 505-513, 2005.
  14. A. Khakifirooz and D. A. Antoniadis, "Scalability of hole mobility enhancement in biaxially strained ultrathin body SOI," IEEE Electron Device Lett., vol. 27, no. 5, pp. 402-404, 2006.
  15. A. Ritenour, A. Khakifirooz, D. A. Antoniadis, R. Z. Lei, W. Tsai, A. Dimoulas, G. Mavrou, and Y. Panayiotatos, "Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack," Appl. Phys. Lett., vol. 88, p. 132107, 2006.
  16. D. A. Antoniadis, I. Aberg, C. N. Chleirigh, O. M. Nayfeh, A. Khakifirooz, and J. L. Hoyt, "Continuous MOSFET performance increase with device scaling: the role of strain and channel material innovation," IBM J. Research Dev., vol. 50, no. 4/5, 2006 (invited).
  17. D. A. Antoniadis, A. Khakifirooz, I. Aberg, and J. L. Hoyt, "Channel material innovations for continuing the historical MOSFET performance increase with scaling", ECS Transactions (invited).
  18. A. Khakifirooz and D. A. Antoniadis, "MOSFET performance scaling -- Part I: Historical trends,", submitted to IEEE Trans. Electron Devices.
  19. A. Khakifirooz and D. A. Antoniadis, "MOSFET performance scaling -- Part II: Future directions,", submitted to IEEE Trans. Electron Devices.
Conference Presentations:
  1. A. Khakifirooz, S. S. Mohajerzadeh, and R. Shafiiha, "A miniaturized thin-film germanium strain gauge," Int. Conf. Microelectronics, pp. 72-75, 1999.
  2. A. Khakifirooz, S. S. Mohajerzadeh, and E. Asl Soleimani, "A miniaturized thin-film germanium strain gauge suitable for mass-production," IMACS/IEEE CSCC, pp. 3572-3575, 1999.
  3. A. Khakifirooz, S. S. Mohajerzadeh, A. Haji, and E. Asl Soleimani, "Effect of copper-induced recrystallization on the piezoresistivity of germanium films," presented in MRS Spring Meeting, San Francisco, CA, Apr. 2000.
  4. A. Khakifirooz, S. Haji, and S. S. Mohajerzadeh, "UV-assisted nickel-induced crystallization of amorphous silicon," presented at E-MRS, IUMRS, ICEM, Strasbourg, France, 2000.
  5. F. Bahmani, S. M. Fakhraie, and A. Kahkifirooz, "A rail-to-rail, constant-gm, 1-volt, CMOS opamp," IEEE Int. Symp. Circuits Systems, vol. 2, pp. 669-672, Geneva, Switzerland, 2000.
  6. A. Khakifirooz, S. S. Mohajerzadeh, and S. Haji, "Field-assisted metal-induced crystallization of amorphous silicon films," presented in the 47th Symp. Ameriacan Vacuum Soc., Boston, MA, Oct. 2-6, 2000.
  7. A. Khakifirooz, S. Haji, S. S. Mohajerzadeh, E. Asl Soleimani, "Structural improvement of amorphous silicon using metal-induced crystallization," Int. Conf. Microelectronics, pp. 237-240, 2000.
  8. B. Nejati, A. Khakifirooz, S. J. Ashtiani, and O. Shoaei, "Pipeline analog-to-digital converters with radix<2," Int. Conf. Microelectronics, pp. 39-42, 2000.
  9. L. Rezaee, S. Mohajerzadeh, A. Khakifirooz, S. Haji, and E. Asl Soleimani, "A novel back-reflecting UV-assisted metal-induced crystallization," presented in MRS Spring Meeting, vol. 664, pp. 651-656, San Francisco, CA, Apr. 2001.
  10. K. Naeli, S. Mohajerzadeh, A. Khakifirooz, S. Haji, and E. Asl Soleimani, "A new field-aided Ge-induced lateral crystallization of silicon," presented in MRS Spring Meeting, San Francisco, CA, Apr. 2001.
  11. A. Goodarzi, A. Akhavan, S. S. Mohajerzadeh, M. Gitibin, A. Miri, A. Khakifirooz, E. Asl Soleimani, "A novel lateral pixel structure for plasma display panels," SID Int. Symp., pp. 782-785, San Jose, CA, June 5-7, 2001.
  12. S. Ashtiani, A. Khakifirooz, and O. Shoaei, "Switched-capacitor band-pass sigma-delta modulator with 4x parallelism," presented at Int. Symp. Signals, Circuits, and Systems, Iasi, Romania, July 10-11, 2001.
  13. L. Rezaee, S. S. Mohajerzadeh, and A. Khakifirooz, "Fabrication of poly-Si TFT's on glass with a novel method of back-reflecting low-temperature UV-assisted nickel-induced crystallization," Int. Semiconductor Device Research Symp., Washington, D.C., Dec. 5-7, 2001.
  14. A. Khakifirooz and D. A. Antoniadis, "Effect of back-gate biasing on the performance and leakage control in deeply scaled SOI MOSFETs," IEEE Int. SOI Conf., pp. 58-59, 2002.
  15. J. Derakhshandeh, S. Mohajerzadeh, N. Golshani, A. Khakifirooz, and M. Robertson, "Field-aided germanium-induced crystallization of amorphous silicon on glass," MRS Spring Meeting, San Francisco, CA, Apr. 2003.
  16. A. Khakifirooz, B. Arvan, R. Tarighat, and S. Mohajerzadeh, "Atmospheric pressure chemical vapor deposition of titanium oxide films from TiCl4 precursor," EMRS Spring Meeting, Strasbourgh, France, June 2003.
  17. B. Hekmatshoar, D. Shahrjerdi, S. Mohajerzadeh, and A. Khakifirooz, "High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C," IEEE Device Research Conf., Salt Lake City, June 23-25, 2003.
  18. B. Hekmatshoar, D. Shahrjerdi, S. Mohajerzadeh, A. Khakifirooz, M. Robertson, A. Tonita, and C. Bennett, "Low temperature stress-assisted germanium-induced crystallization of silicon-germanium alloys on flexible plastic," presented in 11th Canadian Semiconductor Tech. Conf., Ottawa, Canada, 18-22 Aug., 2003.
  19. B. Hekmatshoar, D. Shahrjerdi, S. Mohajerzadeh , A. Khakifirooz, M. Robertson, and A. Afzali-Kusha, "Stress-assisted copper-induced lateral growth of polycrystalline germanium," MRS Fall Meeting, vol. 795, pp. 199-204, Boston, MA, Dec. 2003.
  20. D. Shahrjerdi, B. Hekmatshoar, A. Khakifirooz, and M. Fathipour, "An approach to low-cost fabrication of lateral COOLMOS structures," Proc. Int. Semiconductor Device Research Symp., pp. 272-273, 2003.
  21. E. Fathi, B. Afzal, M. Fathipour, and A. Khakifirooz, "An improved shift-and-ratio Leff extraction method for MOS transistors with halo/pocket implants," Proc. Int. Semiconductor Device Research Symp., pp. 430-431, 2003.
  22. D. Shahrjerdi, B. Hekmatshoar, A. Afzali-Kusha, and A. Khakifirooz , "Optimization of the VT-control method for low-power ultra-thin double-gate SOI logic circuits," Proc. Great Lake Symp. VLSI , pp. 236-239, 2004.
  23. A. Amirabadi, J. Jafari, A. Afzali-Kusha, M. Nourani, and A. Khakifirooz, "Leakage current reduction by new technique in standby mode," Proc. Great Lake Symp. VLSI, pp. 158-161, 2004.
  24. B. Hekmatshoar, D. Shahrjerdi, S. Mohajerzadeh, A. Khakifirooz, M. Robertson, and E. Asl Soliemani, "Polycrystalline germanium and silicon-germanium alloys on plastic for realization of thin-film transistors," MRS Spring Meeting, vol. 814, pp. 101-105, San Francisco, CA, Apr. 2004.
  25. A. Behnam, B. Hekmatshoar, S. Mohajerzadeh , B. Arvan, F. Karbassian, and A. Khakifirooz, "A study of APCVD-deposited TiO2 characteristics in the structure of a tunneling transistor," MRS Spring Meeting, vol. 814, pp. 69-73, San Francisco, CA, Apr. 2004.
  26. A. Khakifirooz, O. M. Nayfeh, and D. A. Antoniadis, "Assessing the performance limits of ultra-thin double-gate MOSFETs: silicon vs. germanium," IEEE Int. SOI Conf., pp. 79-80, Charleston, SC, Oct. 2004.
  27. A. Khakifirooz, A. Ritenour, M. L. Lee, and D. A. Antoniadis, "Germanium oxynitride gate dielectrics prepared by rapid thermal processing," MRS Spring Meeting, San Francisco, CA, March 2005.
  28. J. Koohsorkhi, Y. Adbi, S. Mohajerzadeh, J. Derakhshandeh, H. Hosseinzadegan, and A. Khakifirooz, Application of encapsulated PECVED-grown carbon nano-structure field-emission devices in nanolithography," to be presented in NSTI Nanotechnology Conf., Anaheim, CA, May 8-12, 2005.
  29. A. Khakifirooz O. Nayfeh, M. L. Lee, E. Fitzgerald, and D. A. Antoniadis, "Metal germanide Schottky contacts to relaxed and strained germanium," AVS 52nd Int. Symp. Boston, MA, Oct. 30 - Nov. 4, 2005.
  30. M. Riazati, A. Afzali-Kusha, A. Khakifirooz, M. Mottaghi-Dastjerdi, and A. Sobhani, "Low-power multiplier with static decision for input manipulation," presented in IEEE Symp. Circuits Syst., Greece, May 21-26, 2006.
  31. H. Parandeh-Afshar, A. Afzali-Kusha, and A. Khakifirooz, "A very high performance address bus encoder," presented in IEEE Symp. Circuits Syst., Greece, May 21-26, 2006.
  32. C. Vaishnav, A. Khakifirooz, and M. Devos, "Punishing by rewards: when the performance bell-curve stops working for you," presented in The 24th Int. Conf. System Dynamics Soc., Nijmegen, Netherland, July 23 - 27, 2006.
  33. D. A. Antoniadis, A. Khakifirooz, I. Aberg, C. Ni Chleirigh, O. M. Nayfeh, and J. L. Hoyt, "Channel material innovations for continuing the historical MOSFET performance increase with scaling," presented in SiGe: Materials Processing and Devices, Cancun, Mexico, Oct. 2006 (invited).
  34. D. A. Antoniadis and A. Khakifirooz, "Transistor performance scaling," presented in Workshop on Gate Stack and Contact Engineering for sub-30nm FETs, Monterey, CA, Sept. 2006 (invited).
  35. A. Khakifirooz and D. A. Antoniadis, "Transistor performance scaling: the role of virtual source velocity and its mobility dependence," Int. Electron Device Meeting, San Francisco, CA, Dec. 2006.
  36. D. A. Antoniadis and A. Khakifirooz,, "Trends and requirements of future FETs based on a simple physical device model," Nanoelectronics for Tera-bit Information Processing,Hiroshima, Japan, Jan. 29-30, 2007.