1) Semiconductor Research Corporation (SRC) (May 2003), UCLA "Impact of Full Quantization Effects on 2D Inverse Modeling" O.M. Nayfeh, S.Yu, D.A. Antoniadis
2) IEEE International Conference of Simulation of Semiconductor Processes and Devices (SISPAD), (September 2004), Munich, Germany "On the Relationship Between Mobility and Velocity in sub-50 nm MOSFETs via Calibrated Monte Carlo Simulation" O.M. Nayfeh, S.Yu, D.A. Antoniadis
3) Semiconductor Research Corporation (SRC) (May 2005), Yale "Electrostatics and Mobility Modeling of HOI MOSFETs" O.M. Nayfeh, I. Aberg, C. Chleirigh, J.L.Hoyt, D.A. Antoniadis
4) MTL Annual Research Conference (January 2004) "Experimental Investigation of Polysilicon Quantization Effect" O.M. Nayfeh, D.A. Antoniadis
5) MTL-NEC Workshop on transistors, circuits, and nanoelectronics (December 2005), MIT "Electrostatics of HOI MOSFETs" O.M. Nayfeh, I. Aberg, C. Chleirigh, J.L.Hoyt, D.A. Antoniadis
6) IEEE Silicon Nanoelectronics Workshop (June 2006), Honolulu, HI "Towards MOS Memory Devices Containing 1nm Si Nanoparticles O.M. Nayfeh, D.A. Antoniadis, K. Mantey, M.H. Nayfeh 2001-2002
7) Singapore-MIT Alliance Conference on Nanomaterials (January 2007), Singapore "Semiconductor Nanowires: Fabrication, FETs, Modeling" O.M. Nayfeh, D.A. Antoniadis
8) Device Research Conference (DRC), Notre Dame, ID (June 2007), Memory effects in metal-oxide semiconductor capacitors incorporating dispesed highly monodisperse 1 nm Si nanoparticles O.M. Nayfeh, D.A. Antoniadis, K. Mantey and M.H. Nayfeh
9) Simulation of Semiconductor Processes and Devices, Technical University of Vienna, Austria (September 2007), "Calibrated Hydrodyanamic Simulation of Well-Tempered Deeply Scaled Nanowire Field Effect Transistors" O.M. Nayfeh, D.A. Antoniadis
10) Materials Day, Center for Materials Science and Engineering, MIT (October 2007), "Silicon Nanowire Field Effect Transistors that Incorporate Single Layers of Parallel Bridging Nanowire Channel Material" O.M. Nayfeh, D.A. Antoniadis