59. S. Abdul Hadi, P. Hashemi, N. DiLello, A. Nayfeh, and J. L. Hoyt, "Thin-Film a-Si/c-Si_1-xGe_x/c-Si Heterojunction Solar Cells," submitted to IEEE Journal of Photovoltaics.

58. P. Hashemi, W. Chern, H.-S. Lee, J. T. Teherani, Y. Zhu, J. Gonsalvez, G. G. Shahidi and J. L. Hoyt, "Ultra-thin strained-Ge pMOSFETs with high-K/metal gate and sub-1nm effective oxide thickness," IEEE Electron Device Letters, vol. 33, no. 7, Digital Object Identifier: 10.1109/LED.2012.2195631, 2012.

57. P. Hashemi and J.L. Hoyt, "High Hole-Mobility Strained-Ge/Si0.6Ge0.4 P-MOSFETs with High-K/Metal Gate: Role of Strained-Si Cap Thickness," IEEE Electron Device Letters, vol. 32, no. 2, pp. 173-175, Feb. 2012.

58. S. Paydavosi, K. Aidala, P. Brown, P. Hashemi, G. J. Supran, T. Osedach, J. L. Hoyt, and V. Bulovic, "Detection of Charge Storage on Molecular Thin Films of Tris(8-hydroxyquinoline) Aluminum (Alq3) by Kelvin Force Microscopy, a Candidate System for High Storage Capacity Memory Cells," Nano Letters, vol. 12, no. 3, pp. 1260-1264, Feb. 2012.

55. S. Abdul Hadi, P. Hashemi, A. Nayfeh, and J. Hoyt, "Thin Film a-Si/c-Si1-xGex/c-Si Heterojunction Solar Cells: Design and Material Quality Requirements," ECS (Electrochemical Society) Transactions, vol. 41, n0. 3, Oct. 2011.

54. M. Kim, P. Hashemi and J.L. Hoyt, "Increased critical thickness for high Ge-content strained SiGe-on-Si using selective epitaxial growth," Applied Physics Letters, vol. 97, p. 262106, Dec. 2010.

53. P. Hashemi, M. Kim, J. Hennessy, L. Gomez, D. A. Antoniadis and J.L. Hoyt, "Width-Dependent Hole Mobility in Top-Down Fabricated Si/Ge core/shell Nanowire MOSFETs", Applied Physics Letters, vol. 96, p. 063109, Feb. 2010.

52. P. Hashemi, C. D. Poweleit, M. Canonico and J. L. Hoyt, "Advanced Strained-Silicon and Core-Shell Si/Si1-xGex Nanowires for CMOS Transport Enhancement," ECS (Electrochemical Society) Transactions, vol. 33, no. 6, pp. 687-698, Oct. 2010.

51. L. Gomez, C. Ni Chleirigh, P. Hashemi, and J. L. Hoyt, "Enhanced Hole Mobility in High-Ge Content Asymmetrically Strained-SiGe p-MOSFETs," IEEE Electron Device Letters, vol. 31, no. 8, pp. 782 - 784, 2010.

50. N. Rouhi, B. Esfandyarpour, S. Mohajerzadeh, P. Hashemi, M. D. Robertson, K. Raffel, "Low temperature growth of silicon dioxide using hydrogenation assisted nano-crystallization and plasma enhanced oxidation," Journal of Non-Crystalline Solids, vol. 356, no. 20-22, pp. 1027-1031, May 2010.

49. P. Hashemi, L. Gomez, and J. L. Hoyt, "Gate-All-Around N-MOSFETs with Uniaxial Tensile Strain-Induced Performance Enhancement Scalable to Sub-10-nm Nanowire Diameter," IEEE Electron Device Letters, vol. 30, no. 4, pp. 401-403, April 2009.

48. L. Gomez, P. Hashemi, and J. L. Hoyt, "Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs," IEEE Transactions on Electron Devices, vol. 56, no. 11, pp. 2644-2651, Nov. 2009.

47. P. Hashemi, M. Canonico, J. K. W. Yang, L. Gomez, K. K. Berggren, and J. L. Hoyt, "Fabrication and Characterization of Suspended Uniaxial Tensile Strained-Si Nanowires for Gate-All-Around n-MOSFETs," ECS (Electrochemical Society) Transactions, vol. 16, no. 10, pp. 57-68, Oct. 2008.

46. J. L. Hoyt, P. Hashemi, and L. Gomez, "Prospects for Top-Down Fabricated Uniaxial Strained Nanowire MOSFETs, " in ECS Transactions , vol. 16, no. 10, pp. 731-734, Oct. 2008.

45. L. Gomez, M. Canonico, M. K. Kim, P. Hashemi , and J. L. Hoyt, "Fabrication of Strained-Si/Strained-Ge Heterostructures on Insulator," Journal of Electronic Materials, vol. 37, no. 3, pp. 240-244, March 2008.

44. Y. Abdi, P. Hashemi, S. Mohajerzadeh, M. Jamei, M. D. Robertson, M. J. Burns and J. M. MacLachlan, "Silicon nano-crystalline structures fabricated by a sequential plasma hydrogenation and annealing technique," Thin Solid Films, vol. 516, pp. 3172-3178, March 2008.

43. P. Hashemi, L. Gomez, M. Canonico, M. D. Robertson, and J. L. Hoyt, "Asymmetric strain in nano-scale patterned strained-Si/strained-Ge/strained-Si heterostructures on insulator," Applied Physics Letters, vol. 91, no. 8, p. 083109, Aug 2007.

42. Y. Abdi , M. Jamei , P. Hashemi , S. Mohajerzadeh, M. Robertson , M. Burns , J. MacLachlan, "Visible photoluminescence from a nano-crystalline porous silicon structure fabricated by a plasma hydrogenation and annealing method," Journal of Applied Physics, vol. 101, no. 4, pp. 044309:1-8, Feb 2007.

41. P. Hashemi , Y. Abdi, A. Khajooeizadeh, S. Mohajerzadeh, J. Derakhshandeh, M. D. Robertson, R. Burns, and J. M. MacLachlan, "Hydrogenation-assisted nano-crystallization of amorphous silicon by radio-frequency plasma-enhanced chemical vapor deposition," Journal of Applied Physics, vol. 100, no. 10, pp. 104320:1-6, Nov 2006.

40. Y. Abdi, J. Derakhshandeh, P. Hashemi , S. Mohajerzadeh, F. Karbassian, F. Nayeri, E. Arzi, M. D. Robertson, and H. Radamson, "Light emitting Nano-porous silicon structures fabricated using a plasma hydrogenation technique," Materials Science and Engineering B, vol. 124-125, pp. 483-487, December 2005.

39. P. Hashemi , A. Behnam, E. Fathi, A. Afzali Kusha, and M. El Nokali, "2-D Modeling of Potential Distribution and Threshold Voltage of Short Channel Fully Depleted Dual Material Gate SOI MESFET," Solid State Electronics., vol. 49, no. 8, pp. 1341-1346, August 2005.

38. E. Fathi, A. Behnam, P. Hashemi, B. Esfandiarpoor, and M. Fathipour, "The Influence of the Stacked- and Double- Material Gate Structures on the Short Channel Effects in SOI MOSFETs," IEICE Trans. Electron., vol. E88-C, no. 6, pp. 1122-1126, June 2005.

37. P. Hashemi , J. Derakhshandeh, S. Mohajerzadeh, M. D. Robertson and A. Tonita, "Stress-assisted nickel-induced crystallization of silicon on glass," Journal of Vacuum Science and Technology A (JVSTA), vol. 22, no. 3, pp. 966-970, May/Jun 2004.

36. P. Hashemi, W. Chern and J.L. Hoyt, "Strained Ge for Planar and Non-Planar p-MOSFETs," invited talk presented at the Internat ional Symposium on Development of Core Technologies for Green Nanoelectronics, Tokyo, Japan, March 2012.

35. S. Abdul Hadi, P. Hashemi, N. DiLello, A. Nayfeh, and J. L. Hoyt,"Thin Film a-Si/c-Si1-xGex/c-Si Heterojunction Solar Cells with Ge Content Up To 56%," IEEE Photovoltaics Specialist Conference (PVSC), June 2012.

34. A. Khakifirooz, K. Cheng, T. Nagumo, N. Loubet, T. Adam, A. Reznicek, , J. Kuss, D. Shahrjerdi, R. Sreenivasan, S. Ponoth, H. He, P. Kulkarni, Q. Liu, P. Hashemi, P. Khare, S. Luning, S. Mehta, J. Gimbert, Y. Zhu, Z. Zhu, J. Li, T. Yamamoto, F. Monsieur, S. Naczas, S. Schmitz, S. Holmes, C. Aulnette, N. Daval, B.-Y. Nguyen, M. Khare, G. Shahidi, and B. Doris, "Strain Engineered Extremely Thin SOI (ETSOI) for High-Performance CMOS," VLSI Tech. Symp. 2012, Honolulu, Hawaii, June 2012.

33. S. Paydavosi, K. Aidala, P. Brown, P. Hashemi, G. J. Supran, J. L. Hoyt, and V. Bulovic, "Molecular Flash memories," invited talk at ECS 2012.

32. S. Abdul Hadi, P. Hashemi, N. DiLello, A. Nayfeh, and J. L. Hoyt, "Effect of c-Si0.6Ge0.4 Thickness Grown by LPCVD on the Performance of Thin-Film a-Si/c-Si0.6Ge0.4/c-Si Heterojunction Solar Cells," presented at the 2012 Material Research Society Symposium (MRS Spring 2012), San Francisco, CA, April 2012.

31. S. Paydavosi, K. Aidala, P. Brown, P. Hashemi, G. J. Supran, J. L. Hoyt, and V. Bulovic, "High-Density Charge Storage on Molecular Thin Films- Candidate Materials for High Storage Capacity Memory Cells," IEEE International Electron Device Meeting (IEDM '11), Washington DC, USA, Session 24-4, pp. 543-546, December 2011.

30. J. Hoyt, P. Hashemi, and W. Chern, "Strained Nanowire MOSFETs," invited talk presented at the 220th Electrochemical Society (ECS), Session E9-ULSI Process Integration, Boston, Massachusetts, USA, October 2011.

29. S. Abdul Hadi, P. Hashemi, A. Nayfeh, and J. Hoyt, "Thin Film a-Si/c-Si1-xGex/c-Si Heterojunction Solar Cells: Design and Material Quality Requirements," presented at the 220th Electrochemical Society (ECS), Session E6- Photovoltaics for the 21st Century, Boston, Massachusetts, USA, October 2011.

28. S. Abdul Hadi, P. Hashemi, A. Nayfeh, and J. Hoyt, " a-Si/c-Si1-xGex/c-Si Heterojunction Solar Cells," presented at the 2011 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2011), September 2011, Osaka, Japan.

27. J.L. Hoyt, P. Hashemi, H.-S. Lee, M.A. Bhuiyan, and D.A. Antoniadis, "High Mobility Strained Ge Channels and Gate Dielectrics," invited talk presented at the 2010 Material Research Society Symposium, San Francisco, CA, April 2010.

26. P. Hashemi, J.T. Teherani, and J.L. Hoyt, "Investigation of Hole Mobility in Gate-All-Around Si Nanowire p-MOSFETs with High-k/Metal-Gate: Effects of Hydrogen Thermal Annealing and Nanowire Shape," IEEE International Electron Device Meeting (IEDM ’10), San Francisco, USA, Session 34.5, pp. 788-791, December 2010.

25. P. Hashemi, C.D. Poweleit, M. Canonico, and J.L. Hoyt, "Advanced Strained-Silicon and Core-Shell Si/Si1-xGex Nanowires for CMOS Transport Enhancement," presented at the 218th Electrochemical Society (ECS) International Symposium on SiGe, Ge, & Related Compounds: Materials, Processing, and Device, Session 13.3, Las Vegas, Nevada, USA, October 2010.

24. P. Hashemi, L. Gomez, M. Canonico, and J.L. Hoyt "Electron Transport in Gate-All-Around Uniaxial Tensile Strained-Si Nanowire n-MOSFETs," IEEE International Electron Device Meeting (IEDM’08), San Francisco, USA, session 35-3, pp. 865-868, December 2008.

23. L. Gomez, P. Hashemi, and J.L. Hoyt "Hole Velocity Enhancement in Sub-100nm Gate Length Strained-SiGe Channel p-MOSFETs on Insulator," IEEE SOI Conference, New Palts, NY, USA, October 2008.

22. P. Hashemi , L. Gomez, M. Canonico, and J.L. Hoyt "Performance Enhancement in Uniaxially Tensile Strained-Si Gate-All-Around Nanowire n-MOSFETs," presented at IEEE Device Research Conference (DRC 2008), Santa Barbara, CA, USA, p. 185, June 2008.

21. (Invited) J.L. Hoyt, P. Hashemi, and L. Gomez " Prospects for Top-Down Fabricated Uniaxial Strained Nanowire MOSFETs", in "Are nanowires the future of CMOS?" panel session of the 214th Electrochemical Society (ECS) International Symposium on SiGe, Ge, & Related Compounds: Materials, Processing, and Device, Honolulu, Hawaii, USA, October 2008.

20. P. Hashemi , L. Gomez, M. Canonico, and J.L. Hoyt "Fabrication of Gate-All-Around Uniaxially Strained-Si Nanowire N-MOSFETs on Insulator," TECHCON 2008, Austin, TX, USA, September 2008.

19. P. Hashemi , M. Canonico, J.K.W. Yang, L. Gomez, K.K. Berggren and J.L. Hoyt "Fabrication and Characterization of Suspended Uniaxial Tensile Strained-Si Nanowires for Gate-All-Around Nanowire n-MOSFETs," presented at the 214th Electrochemical Society (ECS) International Symposium on SiGe, Ge, & Related Compounds: Materials, Processing, and Device, Honolulu, Hawaii, USA, October 2008.

18. P. Hashemi, L. Gomez, M. Canonico, and J. L. Hoyt "Fabrication of Gate-All-Around Uniaxially Strained-Si Nanowire N-MOSFETs on Insulator," SRC TECHCON 2008, Austin, TX, USA, September 2008.

17. P. Hashemi , L. Gomez, M. Canonico, and J.L. Hoyt "Stress in Nano-Scale Patterned Strained Silicon/Strained Germanium/Strained Silicon Heterostructures on Insulator," presented at the Electronic Material Conference (EMC 2007), Notre Dame, IN, USA, p. 105, June 2007.

16. B. Fallah-Azad, Y. Abdi, S. Mohajerzadeh, M. Jamei, P. Hashemi, and M.D. Robertson, “Light emitting diodes on glass and silicon substrates fabricated using novel low temperature hydrogenation-assisted nano-crystallization of silicon thin films,” IEEE International Semiconductor Device Research Symposium 2007 (ISDRS 2007), College Park, MD, USA, December 2007.

15. N. Rouhi, B. Esfandyarpour, S. Mohajerzadeh, P. Hashemi , B. Hekmat-Shoar, and M.D. Robertson, “Low Temperature High Quality Growth of Silicon-Dioxide Using Oxygenation of Hydrogenation-Assisted Nano-Structured Silicon Thin Films,” presented at the Material Research Society Spring Meeting (MRS 2007), San Francisco CA, 2007 and published at Mater. Res. Soc. Symp. Proc. Vol. 989, Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2007, Warrendale, PA, USA, 2007, p. 0989-A05-08.

14. M. Jamei, F. Karbassian, S. Mohajerzadeh, Y.Abdi, P. Hashemi , M. D. Robertson and S. Yuill, “Silicon nano-crystals fabricated by novel plasma enhanced hydrogenation technique suitable for light emitting devices,” presented at the Material Research Society Fall Meeting (MRS 2006), Boston MA, Nov. 2006 and published at Mater. Res. Soc. Symp. Proc. Vol. 958, Group IV Semiconductor Nanostructures, Warrendale, PA, USA, 2007, p. 0958-L07-05.

13. J. Koohsorkhi, S. Mohajerzadeh, Y. Abdi, and P. Hashemi , “Fabrication and Modeling of Gated Field-Emission Devices using Carbon Nano Tube on Si substrate,” presented at the Material Research Society Fall Meeting (MRS 2006), Boston MA, Nov. 2006 and published in Nanowires and Carbon Nanotubes — Science and Applications , edited by P. Bandaru, M. Endo, I.A. Kinloch, A.M. Rao (Mater. Res. Soc. Symp. Proc. 963E, Warrendale, PA, USA, 2007), p. 0963-Q20-52.

12. P. Hashemi , J. Derakhshandeh, S. Mohajerzadeh, M. D. Robertson, A. Shayan Arani, and A. Afzali Kusha, "Characterization of Low Temperature Stress-Induced Crystallization of a-Si on Flexible Glass Substrate by Raman and Transmission Electron Microscopy," presented at the IEEE 17th International Conference on Microelectronics, pp. 326-329, December 2005.

11. P. Hashemi , A. Behnam, Y. Abdi, S. Mohajerzadeh, A. Khajooeizadeh and M. D. Robertson, "Metal Free Crystallization of Silicon by RF-PECVD Hydrogenation in Low Temperatures," presented at the 12th Canadian Semiconductor Technology Conference (CSTC 2005), Ottawa, Canada, August 2005.

10. P. Hashemi , A. Behnam, S. Mohajerzadeh, Y. Abdi, M.D. Robertson, J.C. Bennett, R. Thompson, "Low Temperature Growth of Silicon Oxide Using a Novel Plasma Assisted Hydrogenation/Oxygenation Technique," presented at the 12th Canadian Semiconductor Technology Conference (CSTC 2005), Ottawa, Canada, August 2005.

9. P. Hashemi , Y. Abdi, S. Mohajerzadeh, and M. D. Robertson, "Hydrogenation-Assisted Crystallization of Amorphous Silicon on Glass for Low Temperature Growth of Silicon Oxide Layers," presented at the 21st International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 21), Lisbon, Portugal, September 2005.

8. M.D. Robertson, J.C. Bennett, Y. Abdi, J. Koohsorkhi, P. Hashemi , S. Mohajerzadeh, J. Fraser and X. Wu, “TEM and SEM Investigation of PECVD-Grown Carbon Nanotubes,” presented at the 32nd Annual Meeting of the Microscopical Society of Canada, Hamilton, ON, Canada, Proceedings, p140, May 2005.

7. P. Hashemi , J. Derakhshandeh, B. Hekmatshoar, S. Mohajerzadeh, Y. Abdi, and M.D. Robertson, "Low Temperature Metal-Free Fabrication of polycrystalline Si and Ge TFT’s by PECVD Hydrogenation," presented at the Material Research Society Spring Meeting (MRS 2005), San Francisco CA, USA, and published at the Mater. Res. Soc. Symp. Proc. Vol. 862, Spring 2005.

6. Y. Abdi , P. Hashemi , F.D. Nayeri, A. Behnam, S. Mohajerzadeh and , J. Koohsorkhi, M. D. Robertson and E. Arzi, "Fabrication of Nano-crystalline Porous Silicon on Si substrates by a Plasma Enhanced Hydrogenation Technique," presented at the Material Research Society Spring Meeting (MRS 2005), San Francisco CA, USA, and published at the Mater. Res. Soc. Symp. Proc. Vol. 862, Spring 2005.

5. Y. Abdi, J. Koohsorkhi, P. Hashemi , S. Mohajerzadeh, H. Hoseinzadegan and L. Rezaee, "Encapsulated Vertically Grown Carbon Nano-Tubes for Submicron and Nano-Lithography," presented at the Material Research Society Spring Meeting (MRS 2005), San Francisco CA, USA, Spring 2005.

4. A. Behnam, E. Fathi, P. Hashemi , B. Esfandiarpoor, M. Fathipour, "The Influence of the Stacked and Double Material Gate Structures on the Short Channel Effects in SOI MOSFETs," presented at the IEEE 16th International Conference on Microelectronics, Tunisia, pp. 372-375, December 2004.

3. P. Hashemi , J. Derakhshandeh, S. Mohajerzadeh, and M. Robertson "The investigation of stress-assisted nickel-induced crystallization of silicon on glass by TEM and SEM," Presented at the 31st Annual Meeting of the Microscopical Society of Canada, Canada, May 2004.

2. P. Hashemi , A. Behnam, E. Fathi, A. Afzali Kusha, and M. Fathipour "Two-Dimensional Analytical Modeling and Simulation of the Potential and Threshold Voltage of a New Fully Depleted Dual Metal Gate SOI MESFET," presented at the IEEE 16th International Conference on Microelectronics, Tunisia, pp. 88-71, December 2004.

1. P. Hashemi , A. Khajooeizadeh, S. Mohajerzadeh, J. Derakhshandeh, M. Robertson, and J.C. Bennett, "Stress-assisted nickel-induced crystallization of silicon on glass," presented at the 11th Canadian Semiconductor Technology Conference (CSTC2003), Ottawa, Canada, August 2003.

1. P. Hashemi , L. Gomez, and J.L. Hoyt, "Patterning-induced Strain Changes in Strained Si/Strained SiGe Heterostructures," MTL Annual Research Report, p. 80, September 2006.

2. L. Gomez, P. Hashemi , and J.L. Hoyt, "Thin-Body Strained-Si/Strained-Ge Heterostructures on Insulator, " presented at MARCO Focus Center on Materials, Structures and Devices (MSD) teleseminar, Nov. 30th, 2006.

3. J.L. Hoyt, D.A. Antoniadis, E.A. Fitzgerald, L. Gomez, P. Hashemi, and C. Ni Chleirigh, "Si/Ge/Si Heterostructure on Insulator (HOI): Planar and Non-Planar MOSFETs", 2007 MSD Stanford Pre-Review Workshop, Feb 2007.

4. P. Hashemi , L. Gomez, M. Canonico, and J.L. Hoyt "Nano-scale Patterning-Assisted Strain Engineering of Strained Si/Ge/Si Heterostructures on Insulator," presented at MARCO Focus Center on Materials, Structures and Devices (MSD) Annual Review, MIT, Cambridge, MA, May, 2007.

5. C. Ni Chléirigh, L. Gomez, P. Hashemi, M. Kim, R. Wallace, M. Kim, N.D. Theodore, M. Canonico, and J.L. Hoyt "Fabrication of Si/Ge/Si Heterostructures: Bulk and Ultra-thin Body MOSFETs," presented at MARCO Focus Center on Materials, Structures and Devices (MSD) Annual Review, MIT, Cambridge, MA, May, 2007.

6. P. Hashemi, L. Gomez, and J.L. Hoyt "Strain in Nano-scale Patterned Strained Si/strained Ge Heterostructures on Insulator," MTL Annual Research Report, p. 2-22, September 2007.

7. L. Gomez, P. Hashemi, and J.L. Hoyt, "High Hole Mobility Strained-Si/Strained-Ge Heterostructures on Insulator," Microsystems Annual Research Conference, Waterville, NH, Jan 2008.

8. P. Hashemi, M. Canonico, L. Gomez, J.K.W. Yang, K.K. Berggren and J.L. Hoyt, "Suspended Strained-Si Nanowires on Insulator for High-mobility Gate-All-Around Field Effect Transistors," Microsystems Annual Research Conference, Waterville, NH, Jan 2008.

9. J.L. Hoyt, C. Ni Chleirigh, L. Gomez, and P. Hashemi, "Si/SiGe Heterostructures on Bulk and on Insulator for MOSFET Channels," 2008 MSD Stanford Pre-Review Workshop, March 2008.

10. P. Hashemi, L. Gomez, and J.L. Hoyt, "Strained-Si and Strained-Ge for Enhanced Transport Planar and Non-Planar MOSFETs," MARCO Focus Center on Materials, Structures and Devices (MSD) teleseminar, April. 10th, 2008.

11. P. Hashemi, L. Gomez, M. Canonico, and J.L. Hoyt, "Fabrication and Characterization of Uniaxially Strained-Si Gate-All-Around n-MOSFETs," MTL Annual Research Report, 2008.

12. L. Gomez, P. Hashemi, and J.L. Hoyt, "Fabrication of Short Channel p-MOSFETs on Strained-Si/Strained-SiGe Heterostructures on Insulator," MTL Annual Research Report, 2008.

13. P. Hashemi, L. Gomez, and J.L. Hoyt, "Uniaxial Strained-Si and Strained-Ge for Enhanced Transport in Non-Planar MOSFETs," presented at FCRP on Materials, Structures and Devices (MSD) Annual Review, MIT, Cambridge, MA, May, 2008.

14. L. Gomez, P. Hashemi, and J.L. Hoyt, "Short Channel Planar Strained-SiGe and Strained-Ge p-MOSFETs on Insulator," presented at FCRP on Materials, Structures and Devices (MSD) Annual Review, MIT, Cambridge, MA, May, 2008.

15. P. Hashemi, L. Gomez, and J.L. Hoyt, "Electron Transport Enhancement in Uniaxial Tensile strained-Si Nanowire NMOSFETs," Microsystems Annual Research Conference, Waterville, NH, Jan 2009.

16. L. Gomez, P. Hashemi, and J.L. Hoyt, "Hole Velocity in Short Channel Strained-SiGe p-MOSFETs," Microsystems Annual Research Conference, Waterville, NH, Jan 2009.

17. P. Hashemi " Strained-Si and Ge Gate-All-Around Nanowire MOSFETs" Focus Center Research Program for Materials, Structures and Devices (FCRP MSD) Teleseminar, Oct 8th, 2009.

18. L. Gomez, P. Hashemi, and J. L. Hoyt, "Hole Transport in Asymmetrically-Strained SiGe- Channel p-MOSFETs," Focus Center Research Program for Materials, Structures and Devices (FCRP MSD) Teleseminar, April 22nd, 2010.

19. S. Paydavosi, P. Hashemi, E. R. Young, J. L. Hoyt , V. Bulovic,"Performance Comparison of Different Organic Molecular Floating Gate Memories," Focus Center Research Program for Materials, Structures and Devices (FCRP MSD) Teleseminar, May 10th, 2010.

20. P. Hashemi, "Advanced Gate-All-Around Silicon Nanowire Transistors for Low-Power CMOS Technologies," invited talk presented at the Masdar Institute of Science and Technology, March 2011.