Enhanced Charge Carrier Mobility in Two-Dimensional High Dielectric Molybdenum Oxide

Research areas:
  • Uncategorized
Year: 2013
Type of Publication: Article
  • Sivacarendran Balendhran, Jian Zhen Ou Junkai Deng
Journal: Advanced Materials Volume: 25
Number: 1 Pages: 109-114
Month: JAN 4 2013
PT: J; TC: 0; UT: WOS:000312985700012
We demonstrate that the energy bandgap of layered, high-dielectric alpha-MoO3 can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with alpha-MoO3 of similar to 11 nm thickness and carrier mobilities larger than 1100 cm(2) V-1 s(-1) are obtained.