Connecting Single Molecule Electrical Measurements to Ensemble Spectroscopic Properties for Quantification of Single-Walled Carbon Nanotube Separation

BibTex:
Research areas:	Uncategorized	Year:	2009
Type of Publication:	Article
Authors:	Woo-Jae Kim, Kevin P. O' Chang Young Lee brien, James M. Blackwell John J. Plombon
Journal:	Journal of the American Chemical Society	Volume:	131
Number:	9	Pages:	3128-+
Month:	MAR 11 2009

@article{RefWorks:951, author = "Woo-Jae Kim,Chang Young Lee,Kevin P. O{\&}#039 and brien,John J. Plombon,James M. Blackwell,Michael S. Strano", abstract = "We directly compared ensemble spectroscopic measurements to a statistically rigorous single molecule electrical characterization of individual SWNT devices using a high throughput electrical probe station and reported, for the first time, a highly accurate extinction coefficient ratio for metallic to semiconducting SWNTs of 0.352 +/- 0.009. The systematic counting of metallic and semiconducting types from solution also allows us to examine the variances associated with device properties and therefore provide the first measure of potential defect generation during processing methods.", isbn = "0002-7863", journal = "Journal of the American Chemical Society", month = "MAR 11 2009", note = "PT: J; TC: 19; UT: WOS:000264792400004", number = "9", pages = "3128-+", title = "{C}onnecting {S}ingle {M}olecule {E}lectrical {M}easurements to {E}nsemble {S}pectroscopic {P}roperties for {Q}uantification of {S}ingle-{W}alled {C}arbon {N}anotube {S}eparation", volume = "131", year = "2009", }
Note:	PT: J; TC: 19; UT: WOS:000264792400004
Abstract:	We directly compared ensemble spectroscopic measurements to a statistically rigorous single molecule electrical characterization of individual SWNT devices using a high throughput electrical probe station and reported, for the first time, a highly accurate extinction coefficient ratio for metallic to semiconducting SWNTs of 0.352 +/- 0.009. The systematic counting of metallic and semiconducting types from solution also allows us to examine the variances associated with device properties and therefore provide the first measure of potential defect generation during processing methods.

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