High mobility, air-stable organic transistors from hexabenzocoronene/carbon nanotube bilayers

BibTex:
Research areas:	Uncategorized	Year:	2007
Type of Publication:	Article
Authors:	Kenneth D. Harris, Chang Young Lee Shengxiong Xiao
Journal:	Journal of Physical Chemistry C	Volume:	111
Number:	48	Pages:	17947-17951
Month:	DEC 6 2007

@article{RefWorks:969, author = "Kenneth D. Harris,Shengxiong Xiao,Chang Young Lee,Michael S. Strano,Colin Nuckolls,Graciela B. Blanchet", abstract = "The pick-up-stick transistor concept is demonstrated using materials that are both air-stable and fully solution processable. In this paper, the thin film transistor (TFT) semiconductor is a bilayer structure with an array of carbon nanotubes (CNTs) as an underlayer and an alkyl-substituted hexabenzocoronene (HBC) overcoat. Electrical cur-rent flowing through the structure favors the low resistance CNTs, and therefore, the effective channel length, transconductance, and charge carrier mobility are modulated by the CNT density. With this structure, we measure a field effect mobility of 0.1 cm(2)/Vs which represents a factor of 6 improvement over that of HBC without a CNT underlayer. All fabrication is carried out in a bright, air-filled environment.", isbn = "1932-7447", journal = "Journal of Physical Chemistry C", month = "DEC 6 2007", note = "PT: J; TC: 8; UT: WOS:000251291900042", number = "48", pages = "17947-17951", title = "{H}igh mobility, air-stable organic transistors from hexabenzocoronene/carbon nanotube bilayers", volume = "111", year = "2007", }
Note:	PT: J; TC: 8; UT: WOS:000251291900042
Abstract:	The pick-up-stick transistor concept is demonstrated using materials that are both air-stable and fully solution processable. In this paper, the thin film transistor (TFT) semiconductor is a bilayer structure with an array of carbon nanotubes (CNTs) as an underlayer and an alkyl-substituted hexabenzocoronene (HBC) overcoat. Electrical cur-rent flowing through the structure favors the low resistance CNTs, and therefore, the effective channel length, transconductance, and charge carrier mobility are modulated by the CNT density. With this structure, we measure a field effect mobility of 0.1 cm(2)/Vs which represents a factor of 6 improvement over that of HBC without a CNT underlayer. All fabrication is carried out in a bright, air-filled environment.

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