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Power Electronic Technology Available for Licensing

Below is a partial list of power electronic technology developed at MIT and available for licensing.  Follow the links to brief descriptions.

Contact Information:
Afarin Bellisario
Technology Licensing Officer
(617) 253-6966

High Voltage Flexible Thin Film Transistors
MIT Case No. 15405, U.S. Patent Application Serial No. 61/601674
Inventors: Akintunde I. Akinwande, Melissa Alyson Smith

This technology is a high voltage field effect transistor that has been fabricated using thin-film organic semiconductor technology.  High driving voltages are achieved by offsetting the drain or source electrode from the gate creating an un-gated semiconductor region in series with a gated semiconductor region. This technology is remarkable due to its integrated, high voltage, thin film transistors which are based on an organic semiconductor technology fabricated under a low temperature (< 95 degrees Fahrenheit), completely lithographic manufacturing process that is compatible with both rigid and flexible substrates.  More Information >>


Nano scale Porous Hydrophobic Coatings for Energy Efficient Creation of Stable Vapor Film to Reduce Drag

MIT Case No. 15825, U.S. Patent Application Serial No. 61/706401
Inventors: Jacopo Buongiorno, Thomas J. McKrell, Robert E. Cohen, Michael F. Rubner, Harrison O’Hanley

Formation of a vapor film on a solid surface reduces the drag coefficient.  However the formation of a stable vapor film layer requires large input energy. The vapor film is established when the nucleate boiling regime changes to the film boiling regime. The transition from nucleate boiling to film boiling is commonly known as critical heat flux (CHF).  For most normal surfaces CHF occurs at about 1000 kW/m2 for water at atmospheric pressure, requiring substantial energy to develop a surface vapor layer.  This technology allows formation of a stable vapor film on an object’s surface with substantially less energy by reducing CHF by orders of magnitude.  The CHF for surfaces prepared with the coatings is as low as 20-40 kW/m2, requiring 96-98% less heat to sustain the vapor film.  The coatings performance is the result of engineered porosity and hydrophobicity.  More Information >>


High Efficiency Resonant Power Convertor Using Lossless Impedance Control Network

MIT Case No. 14449, U.S. Patent Application Serial No. 61/608375
Inventors: David J. Perreault, Khurram K. Afridi 

This technology involves a resonant power converter architecture operating at fixed frequency that can achieves very high efficiency (over 90%) over a wide operating range. The converter uses lossless impedance control networks and associated controls. The architecture achieves zero voltage switching (ZVS) and near zero current switching (ZCS) simultaneously. In addition, this architecture allows bi-directional power flow.  More Information >>

Efficient, Reliable Energy Buffer for Grid-Interface Power Conversion with Switched Capacitor Architecture

MIT Case No. 14953, U.S. Patent Application Serial Nos. 61/587308, 61/594990
Inventors: Steven Leeb, David Perreault, Khurram K Afridi, Minjie Chen, Arthur Hsu Chen Chang

A buffering strategy that utilizes the ability of a capacitor to efficiently operate over a wide voltage range allows increasing the effective energy storage density to become on par with that of electrolytic capacitor. Previous switched capacitor buffering strategies have been shown to be effective in achieving high capacitor energy utilization, however, they are either too complicated for practical implementation or suffer large voltage ripple ratio. The Stacked Switched Capacitor buffer architecture in this technology provides high effective energy density, as long as the capacitors can operate efficiently over a wide voltage range.  More Information >>