Power Electronic Technology
Available for Licensing
Below is a partial list of power electronic technology developed at MIT
and
available for licensing. Follow the links to brief descriptions.
Contact Information:
Afarin Bellisario
Technology Licensing Officer
(617) 253-6966
aobell@mit.edu
High Voltage Flexible Thin
Film Transistors
MIT
Case No.
15405,
U.S. Patent Application Serial
No. 61/601674
Inventors:
Akintunde I. Akinwande,
Melissa Alyson Smith
This
technology is a high voltage
field effect transistor that has
been fabricated using thin-film
organic semiconductor
technology. High driving
voltages are achieved by
offsetting the drain or source
electrode from the gate creating
an un-gated semiconductor region
in series with a gated
semiconductor region. This
technology is remarkable due to
its integrated, high voltage,
thin film transistors which are
based on an organic
semiconductor technology
fabricated under a low
temperature (< 95 degrees
Fahrenheit), completely
lithographic manufacturing
process that is compatible with
both rigid and flexible
substrates.
More
Information >>
Nano scale Porous Hydrophobic Coatings for Energy Efficient Creation of Stable Vapor Film to Reduce Drag
MIT Case No.
15825,
U.S. Patent Application Serial No. 61/706401
Inventors:
Jacopo Buongiorno,
Thomas J. McKrell,
Robert E. Cohen,
Michael F. Rubner, Harrison O’Hanley
Formation of a vapor film on a solid surface reduces the drag coefficient. However the formation of a stable vapor film
layer requires large input energy.
The vapor film is
established when the nucleate boiling regime changes to the
film boiling regime. The transition from nucleate boiling to
film boiling is commonly known as critical heat flux (CHF).
For
most normal surfaces CHF occurs at about 1000 kW/m2
for water at atmospheric pressure, requiring substantial
energy to develop a surface vapor layer.
This technology allows formation of a stable vapor film on an object’s surface with substantially less energy by reducing CHF by orders of magnitude. The CHF for surfaces prepared with the coatings is as low as 20-40 kW/m2, requiring 96-98% less heat to sustain the vapor film. The coatings performance is the result of engineered porosity and hydrophobicity.
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High Efficiency Resonant Power Convertor Using Lossless
Impedance Control Network
MIT Case No.
14449,
U.S. Patent Application Serial No. 61/608375
Inventors:
David J. Perreault,
Khurram K. Afridi
This technology involves a resonant power converter architecture operating at fixed
frequency that can achieves very high efficiency (over 90%) over a wide
operating range. The converter uses lossless impedance control networks and
associated controls. The architecture achieves zero voltage switching (ZVS) and
near zero current switching (ZCS) simultaneously. In addition, this architecture
allows bi-directional power flow.
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Efficient, Reliable Energy
Buffer for Grid-Interface Power Conversion with Switched
Capacitor Architecture
MIT Case No.
14953,
U.S. Patent Application Serial Nos. 61/587308, 61/594990
Inventors:
Steven Leeb,
David Perreault,
Khurram K Afridi,
Minjie Chen, Arthur Hsu Chen Chang
A
buffering strategy that utilizes the ability of a capacitor to
efficiently operate over a wide voltage range allows increasing
the effective energy storage density to become on par with that
of electrolytic capacitor. Previous switched capacitor buffering
strategies have been shown to be effective in achieving high
capacitor energy utilization, however, they are either too
complicated for practical implementation or suffer large voltage
ripple ratio. The Stacked Switched Capacitor buffer architecture
in this technology provides high effective energy density, as
long as the capacitors can operate efficiently over a wide
voltage range.
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Information >>
