High buffer films
Tunable microwave devices, tunable mixers, oscillators, phase shifters and filters
These inventions propose a method to integrate BST and related films onto Si substrates and to obtain high buffer films without defects. The method uses commercially available SOI wafers with sufficiently thick oxide layers to separate the BST based microwave device structures from the Si substrate, plus a thin, high quality, single crystalline Si top layer capable of initiating the growth of high quality epitaxial BST films on top of it. Defects in epitaxially grown ferroelectric thin films on Si substrates result from a dimensional misfit between the crystal lattices. High buffer films without residual stress and defects are obtained by using the buffer layer transfer technique by wafer bonding and ion cutting.
Last revised:December 2, 2010
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