Case 10697

Strained Silicon-on-Silicon by Wafer Bonding and Layer Transfer


Strained semiconductor layer, MOS transistor, Wafer Bonding


Semiconductor-based substrates and electronic devices

  • Conventional Si1-xGex-based substrates can increase the complexity of device fabrication.
  • The presence of an oxide layer forces process modification and reduces thermal conductivity.


This invention proposes a structure that consists of two layers formed of the same semiconducting material (e.g. Si or Ge), but having different levels of strain. The two layers can be bonded directly one to the other to maintain a strain in at least one of the layers. Parallel to the interface, the lattice spacing of the second layer is different than the lattice spacing of the first layer. High-performance transistors can be designed based on such a semiconductor-based structure.


    Elimination of undesirable strain-inducing layers found in prior substrates

  • Professor Eugene A. Fitzgerald(Department of Materials Science and Engineering, MIT)
  • Dr. David Michael Isaacson (Department of Materials Science and Engineering, MIT)

Intellectual Property:

U.S. Patent Number 7,495,266, issued on February 24, 2009



Last revised: January 19, 2012

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