Si/nitride structures, GaN on Si devices, GaN-on-nothing, substrate removal
RF power amplifiers, cell phone base stations, anti-collision radar systems, digital electronics, power electronics
This invention involves several technologies to improve performance of GaN on Si devices to match the performance of GaN on SiC devices and to fabricate GaN HEMTs and Si MOSFETs devices in close proximity.
US Patent Number 8,188,459, issued on May 29, 2012
J. W. Chung, E. L. Piner, J. C. Roberts and T. Palacios, “New Technologies for Improving High Frequency Performance of AlGaN/GaN HEMTs”, International Conference on Advances in Electronics and Micro-Electronics, Valencia, Spain, Sept. 29-Oct. 4, 2008.
Last revised: April 29, 2013
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