Case 12506

New Devices Based on Si/Nitride Structures

Keywords:

Si/nitride structures, GaN on Si devices, GaN-on-nothing, substrate removal

Applications:

RF power amplifiers, cell phone base stations, anti-collision radar systems, digital electronics, power electronics

Problem:
  • Performance of GaN on Si device not comparable to that of GaN on SiC devices
  • High cost of GaN on SiC devices

Technology:

This invention involves several technologies to improve performance of GaN on Si devices to match the performance of GaN on SiC devices and to fabricate GaN HEMTs and Si MOSFETs devices in close proximity.

Advantages:
  • Reduce buffer leakage currents
  • Improve transistor reliability and breakdown voltage
  • Increase flexibility of device design
  • Increase of implantation yield
  • Cheaper manufacturing cost

Inventors:
  • Dr. Tomas Palacios (Department of Electrical Engineering and Computer Science, MIT)
  • Jinwook Chung (Department Electrical Engineering and Computer Science, MIT)

Intellectual Property:

US Patent Number 8,188,459, issued on May 29, 2012

Publications:

J. W. Chung, E. L. Piner, J. C. Roberts and T. Palacios, “New Technologies for Improving High Frequency Performance of AlGaN/GaN HEMTs”, International Conference on Advances in Electronics and Micro-Electronics, Valencia, Spain, Sept. 29-Oct. 4, 2008.

Last revised: April 29, 2013

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