Case 12506

New Devices Based on Si/Nitride Structures


Si/nitride structures, GaN on Si devices, GaN-on-nothing, substrate removal


RF power amplifiers, cell phone base stations, anti-collision radar systems, digital electronics, power electronics

  • Performance of GaN on Si device not comparable to that of GaN on SiC devices
  • High cost of GaN on SiC devices


This invention involves several technologies to improve performance of GaN on Si devices to match the performance of GaN on SiC devices and to fabricate GaN HEMTs and Si MOSFETs devices in close proximity.

  • Reduce buffer leakage currents
  • Improve transistor reliability and breakdown voltage
  • Increase flexibility of device design
  • Increase of implantation yield
  • Cheaper manufacturing cost

  • Dr. Tomas Palacios (Department of Electrical Engineering and Computer Science, MIT)
  • Jinwook Chung (Department Electrical Engineering and Computer Science, MIT)

Intellectual Property:

US Patent Number 8,188,459, issued on May 29, 2012


J. W. Chung, E. L. Piner, J. C. Roberts and T. Palacios, “New Technologies for Improving High Frequency Performance of AlGaN/GaN HEMTs”, International Conference on Advances in Electronics and Micro-Electronics, Valencia, Spain, Sept. 29-Oct. 4, 2008.

Last revised: April 29, 2013

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