Case 13414

New Wafer Technology and Its Applications in Nitride Semiconductors

Keywords:

Wafer bonding technology, nitride semiconductors, GaN device, Si processing, heterogeneous integration

Applications:

High-frequency electronics, digital electronic and high voltage power electronics, integration of optoelectronics with silicon electronics

Problem:

    Limited applications of wafer bonding technology in nitride semiconductors

Technology:

This invention proposes several novel semiconductor device structures based on a new wafer bonding technique in nitride semiconductors. This invention utilizes an interlayer, such as hydrogen silsesquioxane (HSQ or SiO2), as an adhesive layer to create a robust defect-free bond. Potential applications include integration of GaN with Si electronics, fabrication of N-face GaN transistors, Ga-face GaN transistors on any substrate to reduce the leakage current and increase the breakdown voltage, and RESURF power GaN devices.

Advantages:
  • High thermal stability of wafer bonding
  • Support large lattice mismatch and thermal expansion coefficient differences between GaN and Si
  • Improves transport properties (mobility, carrier density, sheet resistance)

Inventors:
  • Dr. Tomas Palacios (Department Electrical Engineering and Computer Science, MIT)
  • Jinwook Chung (Department Electrical Engineering and Computer Science, MIT)
  • Han Wang (Department Electrical Engineering and Computer Science, MIT)

Intellectual Property:

U.S. Patent Application Number 12/475740, filed on June 1, 2009

Publications:

J. W. Chung, J. Lee, E. L. Piner, and T. Palacios, “Seamless On-wafer Integration of Si(100) MOSFETs and GaN HEMTs”, IEEE Electron Device Lett., vol. 30, no. 10, pp. 1015-1017, Oct. 2009.

J. W. Chung, E. L. Piner, and T. Palacios, “N-face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology”, IEEE Electron Device Lett., vol. 30, no. 2, pp. 113-116, Feb. 2009.

Last revised:January 31, 2011

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