Wafer bonding technology, nitride semiconductors, GaN device, Si processing, heterogeneous integration
High-frequency electronics, digital electronic and high voltage power electronics, integration of optoelectronics with silicon electronics
Limited applications of wafer bonding technology in nitride semiconductors
This invention proposes several novel semiconductor device structures based on a new wafer bonding technique in nitride semiconductors. This invention utilizes an interlayer, such as hydrogen silsesquioxane (HSQ or SiO2), as an adhesive layer to create a robust defect-free bond. Potential applications include integration of GaN with Si electronics, fabrication of N-face GaN transistors, Ga-face GaN transistors on any substrate to reduce the leakage current and increase the breakdown voltage, and RESURF power GaN devices.
U.S. Patent Application Number 12/475740, filed on June 1, 2009
J. W. Chung, J. Lee, E. L. Piner, and T. Palacios, “Seamless On-wafer Integration of Si(100) MOSFETs and GaN HEMTs”, IEEE Electron Device Lett., vol. 30, no. 10, pp. 1015-1017, Oct. 2009.
J. W. Chung, E. L. Piner, and T. Palacios, “N-face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology”, IEEE Electron Device Lett., vol. 30, no. 2, pp. 113-116, Feb. 2009.
Last revised:January 31, 2011
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