Deposition of Ge on Si, Ge pin diodes, Germanium
Ge pin diodes, microphotonics
The Ge films deposited using the current technology contain a number of defects such as dislocations, leading to poor-performance Ge devices.
This invention presents a low-temperature deposition process of Ge on Si with high quality. The starting Si surface is first terminated with hydrogen by HF treatment, as in the previous method. Then the deposition follows three steps: 1. Removal of hydrogen atoms from the Si surface before the Ge deposition; 2. Use of Chemical vapor deposition (CVP) and deposition of Ge on the reactive Si surface without hydrogen. 3. Use of high-purity Ge source gas without dilution or high-purity Ge source gas diluted in an inert gas such as N2, Ar and He, being free from contaminants.
WO Patent Application PCT/US2010/49766 filed on 9/22/2010
Last revised: Aug 24, 2011