Nitride-based transistor, Si substrate, inverters, power conversion
High voltage power electronics, power amplification, hybrid vehicles, high efficient power inverters for solar cells, power converters for LEDs
GaN grown on Si substrate have high leakage current and limited breakdown voltage due to conducting Si substrate.
This invention introduces three new GaN-on-Si substrate structures that increase nitride transistor breakdown voltage, reduce device leakage, improve nitride material quality and potentially produce free standing GaN wafers. The new substrates use three different structures to block the leakage current through the substrate and substrate/nitride interface: (a) p-n junctions on the top Si surface, (b) p-n junctions above an oxide layer, (c) Si pillars above oxide.
Reduces leakage current so that GaN transistors with breakdown voltages above 300V can be achieved.
U.S. Patent Application Number 61/735604, filed on December 11, 2012
Last revised: April 30, 2013