Case 15195

New Structure and Technology for Power Semiconductor Devices


Nitride semiconductor, transistors


Power electronics, power amplification, and digital electronics


Current nitride-based transistors suffer from buffer leakage current and low performance of the normally-off nitride-based transistors.


This invention describes a new nitride-based transistor which has a 3-D trench structure between the Source and Drain contacts and a conductive electrode covering at least some portions of the top and sidewalls of the 3D trenches. High performance normally-off nitride transistors can be fabricated with the combination of the trench-structure and a normally-off gate region.

  • Reduced off-state leakage current
  • Improved performance of normally-off nitride based transistors
  • Reduced on-resistance and increased current density

  • Associate Professor Tomas Palacios (Department of Electrical Engineering and Computer Science, MIT)
  • Bin Lu (Department of Electrical Engineering and Computer Science, MIT)
  • Elison Matioli (Department of Electrical Engineering and Computer Science, MIT)

Intellectual Property:

US Patent Application 13/649658, filed on October 11, 2012

PCT Patent Application PCT/US2012/059744, filed on October 11, 2012


Corey J. Noone, Manuel Torrilhon, and A. Mitsos. Heliostat Field Optimization: A New Computationally Efficient Model and Biomimetic Layout. In Press: Solar Energy. December 09, 2011.

Corey J. Noone, Amin Ghobeity, A. H. Slocum, G. Tzamtzis, and A. Mitsos. Site Selection for Hillside Central Receiver Solar Thermal Plants. Solar Energy, 85(5):839-848. 2011.

Corey J. Noone and Alexander Mitsos. Heliostat Layout Optimization via Automatic Differentiation: Adjoints and Convex Relaxations. SIAM Computational Science and Engineering Conference, Reno,NV. 28 Feb–04 March 2011.

Last revised: April 30, 2013

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