Nitride semiconductor, transistors
Power electronics, power amplification, and digital electronics
Current nitride-based transistors suffer from buffer leakage current and low performance of the normally-off nitride-based transistors.
This invention describes a new nitride-based transistor which has a 3-D trench structure between the Source and Drain contacts and a conductive electrode covering at least some portions of the top and sidewalls of the 3D trenches. High performance normally-off nitride transistors can be fabricated with the combination of the trench-structure and a normally-off gate region.
US Patent Application 13/649658, filed on October 11, 2012
PCT Patent Application PCT/US2012/059744, filed on October 11, 2012
Corey J. Noone, Manuel Torrilhon, and A. Mitsos. Heliostat Field Optimization: A New Computationally Efficient Model and Biomimetic Layout. In Press: Solar Energy. http://dx.doi.org/10.1016/j.solener.2011.12.007. December 09, 2011.
Corey J. Noone, Amin Ghobeity, A. H. Slocum, G. Tzamtzis, and A. Mitsos. Site Selection for Hillside Central Receiver Solar Thermal Plants. Solar Energy, 85(5):839-848. http://dx.doi.org/10.1016/j.solener.2011.01.017. 2011.
Corey J. Noone and Alexander Mitsos. Heliostat Layout Optimization via Automatic Differentiation: Adjoints and Convex Relaxations. SIAM Computational Science and Engineering Conference, Reno,NV. 28 Feb–04 March 2011.
Last revised: April 30, 2013