Thin crystalline Si (ts-Si) layers, wire-sawing, silicon PV
The invention can be used in photovoltaic devices such as; single or dual homojunction device, tunable voltage device, and wafer splitting, among others.
Wire-sawn wafers are limited in thickness because of breakage and mechanical stability. Additionally, during the slicing process, a large fraction of material is lost as waste.
This invention describes a method to create thin, crystalline Si (tc-Si) layers, many of which can be grown and separated from the same crystalline silicon (c-Si) template.
US Patent Application Number 13/660213, filed on October 25, 2011
PCT Patent Application Number PCT/US2012/062064, filed on October 26, 2012
Last revised: April 30, 2013