Case 15405

 

High Voltage, Flexible, Thin Film Transistors

 

Keywords:

High Voltage Organic Semiconductor, High Voltage Thin Film Transistors/FET

 

Applications:

High voltage applications requiring flexible substrate: medical devices, electric cars

 

Problem:

Most current developments in flexible electronics and organic transistors are focused on low voltage applications, leaving high voltage (high power) applications requiring drive voltages larger than 100 V when compared to conventional silicon based semiconductors.

 

Technology:

This is a high voltage field effect transistor that has been fabricated using thin-film organic semiconductor technology. High driving voltages are achieved by offsetting the drain or source electrode from the gate creating an un-gated semiconductor region in series with a gated semiconductor region. This technology is remarkable due to its integrated, high voltage, thin film transistors which are based on an organic semiconductor technology fabricated under a low temperature (< 95 degrees Fahrenheit), completely lithographic manufacturing process that is compatible with both rigid and flexible substrates.

 

Advantages:

·         Achieves high output voltage with organic semiconductor technology

·         Uses a low temperature (<95 degrees Fahrenheit) process for manufacturing, potentially enabling low cost roll-to-roll printing technology

·         Compatible with both rigid and flexible substrates

 

Inventors:  

·         Professor Akintunde I. Akinwande (Department of Electrical Engineering and Computer Science MIT)

·         Dr. Melissa Alyson Smith (Microsystems Technology Laboratories, MIT)

 

Intellectual Property:

U.S. Patent Application Serial Number 61/601674 filed on February 22, 2012

 

Publications:

Kymissis, I., A.I. Akinwande, and V. Bulovic, A lithographic process for integrated organic field effect transistors. Journal of Display Technology, 2005. 1(2): p. 289-294.


Wang, H., et al., Top contact organic field effect transistors fabricated using a photolithographic process. Chinese physics B. 20(8): p. 087306.


Martin, R.A., et al., High- Voltage amorphous silicon thin-film transistors. IEEE Transactions on Electron Devices, 1993. 40(3): p. 634-644.


Wang, A., et al., Tunable threshold voltage and flatband voltage in pentacene field effect transistors. Applied Physics Letters, 2006. 89(11): p.112109.


Choi,Y., et al., Low voltage organic transistors and depletion-load inverters with high-K pyrochlore BZN gate dielectric on polymer substrate. IEEE Transactions of Electron Devices, 2005. 52 (12): p. 2819-2824.

 

 

Last revised:  April 3, 2013

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