Case 15405


High Voltage, Flexible, Thin Film Transistors



High Voltage Organic Semiconductor, High Voltage Thin Film Transistors/FET



High voltage applications requiring flexible substrate: medical devices, electric cars



Most current developments in flexible electronics and organic transistors are focused on low voltage applications, leaving high voltage (high power) applications requiring drive voltages larger than 100 V when compared to conventional silicon based semiconductors.



This is a high voltage field effect transistor that has been fabricated using thin-film organic semiconductor technology. High driving voltages are achieved by offsetting the drain or source electrode from the gate creating an un-gated semiconductor region in series with a gated semiconductor region. This technology is remarkable due to its integrated, high voltage, thin film transistors which are based on an organic semiconductor technology fabricated under a low temperature (< 95 degrees Fahrenheit), completely lithographic manufacturing process that is compatible with both rigid and flexible substrates.



·         Achieves high output voltage with organic semiconductor technology

·         Uses a low temperature (<95 degrees Fahrenheit) process for manufacturing, potentially enabling low cost roll-to-roll printing technology

·         Compatible with both rigid and flexible substrates



·         Professor Akintunde I. Akinwande (Department of Electrical Engineering and Computer Science MIT)

·         Dr. Melissa Alyson Smith (Microsystems Technology Laboratories, MIT)


Intellectual Property:

U.S. Patent Application Serial Number 61/601674 filed on February 22, 2012



Kymissis, I., A.I. Akinwande, and V. Bulovic, A lithographic process for integrated organic field effect transistors. Journal of Display Technology, 2005. 1(2): p. 289-294.

Wang, H., et al., Top contact organic field effect transistors fabricated using a photolithographic process. Chinese physics B. 20(8): p. 087306.

Martin, R.A., et al., High- Voltage amorphous silicon thin-film transistors. IEEE Transactions on Electron Devices, 1993. 40(3): p. 634-644.

Wang, A., et al., Tunable threshold voltage and flatband voltage in pentacene field effect transistors. Applied Physics Letters, 2006. 89(11): p.112109.

Choi,Y., et al., Low voltage organic transistors and depletion-load inverters with high-K pyrochlore BZN gate dielectric on polymer substrate. IEEE Transactions of Electron Devices, 2005. 52 (12): p. 2819-2824.



Last revised:  April 3, 2013

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