DRIFT-MURI Review (July 30, 2009)
Massachusetts Institute of Technology
50 Vassar Street, Building 34, Room 401
Carl Thompson (MIT): General Reliability Assessment Methods
Umesh Mishra (UCSB): Photo-Assisted HF CV Characterization of Si3N4/GaN Interface State Density
James Speck (UCSB): MBE of AlGaN/GaN HEMTs: Materials Developments and Effect of Growth Methods and Dislocations
Jesus del Alamo (MIT): A model for the critical voltage for electrical degradation in GaN HEMTs
Prashanth Makaram (MIT): Materials Reliability in AlGaN/GaN HEMTs
Tomas Palacios (MIT): InAlN/GaN HEMTs: Technology development and reliability analysis
Jasprit Singh (Univ. Michigan ): Hot carrier distributions in nitride and other HFETs
Aaron Arehart, Drew Malonis, Steven A. Ringel (OSU): Next Generation of Precision Defect Characterization in AlGaN/GaN Devices: Toward HEMT-Based Quantitative Trap Spectroscopy
Len Brillson (OSU): Nanoscale Lateral and Depth-Wise Mapping of Temperature and Defect Evolution Inside Operating AlGaN/GaN HEMTs
Sokrates Pantelides and Ron Schrimpf ( Vanderbilt Univ. ): Defect identification in new technologies based on first principles calculations and targeted experiments
Robert Trew and Griff Bilbro (NCSU): Modeling Physical Effects in AlGaN/GaN HFETs
Martin Kuball ( Univ. of Bristol ): Integrated Raman-EL-Electrical Analysis: Novel Analysis for Device Reliability