• T. Palacios, L. Shen, L. Ardaravicius, S. Keller, A. Chakraborty, S. Heikman, A. Matulionis, and U. K. Mishra: “Nitride-based High Electron Mobility Transistors with a GaN Spacer”, accepted in Appl. Phys. Letts. (Feb. 2006).

• T. Palacios, Y.-R. Wu, A. Chakraborty, N. Fichtenbaum, S. Keller, S. P. DenBaars, J. Singh, and U. K. Mishra: “Measurement of the Saturated Electron Velocity in AlGaN/GaN HEMTs”, to be submitted to Appl. Phys. Letts. (March 2006).

• T. Palacios, C. Suh, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra: “AlGaN/GaN Enhancement-Mode HEMT for mm-wave Applications”, Elect. Dev. Lett. 2006, vol. 27, pp. 428-430.

• T. Palacios, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra: “Output Power Results in AlGaN/GaN HEMTs with an InGaN Back-barrier”, to be submitted to Elect. Dev. Lett. (Dec. 2005).

• T. Palacios, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra: “Effect of Harmonic Tuning in the Output Power Performance of AlGaN/GaN HEMTs”, submitted to Elect. Dev. Lett. (Feb. 2006).

• T. Palacios, Y. Dora, A. Chakraborty, C. Sanabria, S. Keller, S. P. DenBaars, and U. K. Mishra: “Optimization of AlGaN/GaN HEMTs for High Frequency Operation”, phys. stat. sol. (a) 2006, vol. 203, no. 7, 1845-1850 (Editor´s choice).

• T. Palacios, A. Chakraborty, S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra: “AlGaN/GaN High Electron Mobility Transistors with InGaN Back-barrier”, Elect. Dev. Lett., 2006, vol. 27, pp. 13-15.

• T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra: “High Power AlGaN/GaN HEMTs for Ka-band Applications”, Elect. Dev. Lett., 2005, vol. 26, pp. 781-783.

• T. Palacios, A. Chini, D. Buttari, S. Heikman, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra: “Use of Multichannel Heterostructures to Improve the Access Resistance and Linearity in GaN-Based HEMTs”, to be published in IEEE Trans. On Electron Devices (February 2006).

• T. Palacios, S. Rajan, A. Chakraborty, S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra: “Influence of the Dynamic Access Resistance in the gm and fT Linearity of AlGaN/GaN HEMTs”, IEEE Trans. On Electron Devices, 2005, vol. 52, pp. 2117-2123.

• T. Palacios, L. Shen, S. Keller, A. Chakraborty, S. Heikman, D. Buttari, S. P. DenBaars, and U. K. Mishra: “Demonstration of a GaN-spacer High Electron Mobility Transistor with Low Alloy Scattering”, phys. stat. sol. (a), 2005, vol. 202, no. 5, pp. 837-840.

• T. Palacios, F. Calle, and J. Grajal: “Remote Collection and Measurement of Photogenerated Carriers Swept by Surface Acoustic Waves in GaN”, Appl. Phys. Lett., 2004, vol. 84, pp. 3166-3168.

• T. Palacios, F. Calle, E. Monroy, and E. Muñoz: “Submicron Technology for III-Nitride Semiconductors”. J. Vac. Sci. & Tech. B, 2002, vol. 20, pp. 2071-2074.

• T. Palacios, E. Monroy, F. Calle, and F. Omnès: “High-responsivity submicron MSM UV detectors”. Appl. Phys. Lett, 2002, vol. 81, pp. 1902-1904.

• T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eickhoff, O. Ambacher and C. Prieto: “Nanotechnology for SAW devices on AlN Epilayers”. Mat. Sci. Eng. B., 2002, vol. 93, 1-3, pp. 154-158.

• T. Palacios, F. Calle, E. Monroy, F. Naranjo, M. A. Sánchez-García, E. Calleja and E. Muñoz: “Wet Etching of GaN grown by molecular beam epitaxy on Si(111)”. Semic. Sci. and Tech., 2000, vol. 15, pp. 996-1000.

• T. Palacios, F. Calle, E. Monroy, and F. Omnès: “Novel approaches for metal-semiconductor-metal GaN UV photodetectors”. phys. stat. sol. (a),  2002, no. 1, pp. 476-479.

• Nidhi, T. Palacios, A. Chakraborty, S. Keller, and U. K. Mishra, “Impact of Access resistance on High Frequency Performance AlGaN/GaN HEMTs by Measurements at Low Temperaturas”, submitted to Electron Device Letters (Feb. 2006).

• L. Shen, T. Palacios, C. Poblenz, A. Corrion, A. Chakraborty, S. Keller, J. S. Speck, and U. K. Mishra, “Unpassivated High Power Deeply-Recessed GaN HEMTs with Fluorine Plasma Surface Treatment”, IEEE Electron Dev. Letts. 2006, vol. 27, 4, pp. 214-216.

• F. Calle, T. Palacios, J. Pedros, and J.Grajal: “Surface-acoustic-wave-controlled photodetectors”, SPIE-Int. Soc. Opt. Eng. Proceedings of Spie - the International Society for Optical Engineering, vol.5502, no.1, pp.439-42, 2004.

• F. Calle, T. Palacios, E. Monroy, J. Grajal, M. Verdú, Z. Bougrioua and I. Moerman: “AlGaN/GaN HEMTs: Material, Processing and Characterization”. Journal of Mat. Science: Material in Electronics, 2003, vol. 14, pp. 271-277.

• W. Snoeys, T. Palacios and G. Anelli: “New NMOS Layout Structure for Radiation Tolerance”. IEEE Trans. Nuc. Sci., 2002, vol. 49, 4, pp. 1829-1833.

• E. Monroy, T. Palacios, O. Hainaut, F. Omnès, F. Calle, and J.-F. Hochedez: “Assessment of GaN metal-semiconductor-metal photodiodes for high-energy ultraviolet photodetection”. Appl. Phys. Lett., 2002, vol. 80, 17, pp. 3198-3200.

• A. Corrion, C. Poblenz, T. Palacios, S. Rajan, U. K. Mishra, and S. J. Speck, “Review of recent developments in growth of AlGaN/GaN high-electron mobility transistors on 4H-SiC by plasma-assisted molecular beam epitaxy”. To be published in IEICE Trans.. on Electronics Special Section on Heterostructure Microelectronics (2006).

• C. S. Suh, E. Snow, T. Palacios, L. Shen, Y. Dora, N. Fichtenbaum, A. Chakraborty, L. McCarthy, S. Keller, and U. K. Mishra, “Systematic Characterization of Fluorine-Based Plasma Treatment on AlGaN/GaN HEMTs”, to be submitted to Elect. Dev. Letts. (Dec. 2005).

• F. Calle, J. Pedrós, T. Palacios, and J. Grajal: “Nitride-bases Surface Acoustic Wave Devices and Applications”. Phys. Stat. Sol. c, 2005, vol. 2, 3, pp. 976-983.

• C. Sanabria, H. Xu, T. Palacios, A. Chakraborty, S. Heikman, U. K. Mishra, and R. A. York: “Influence of Epitaxial Structure in the Noise Figure of AlGaN/GaN HEMTs”. IEEE Trans. Microwave Theory Tech., 2004, vol 53, pp. 762-769.

• D. Buttari, A. Chini, T. Palacios, R. Coffie, L. Shen, H. Xing, S. Heikman, L. McCarthy, A. Chakraborty, S. Keller, and U. K. Mishra: “Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures”. Appl. Phys. Lett., 2003, vol. 83, 23, pp. 4779-4781.

• E. Monroy, F. Calle, T. Palacios, J. Sánchez-Osorio, M. Verdú, F. J. Sánchez, M. T. Montojo, F. Omnès, Z. Bougrioua, and I. Moerman: “Reliability of Schottky contacts on AlGaN”, Phys. Stat. Sol. (a), 2001, 188, no. 1,  pp. 367-370.

• Y. Fu, L. Shen, Y. Pei, T. Palacios, Y. Dora, A. Chakraborty, and U. K. Mishra: “AlGaN Related Trap Level in MOCVD Ga-face GaN HEMTs”, to be submitted to J. Appl. Phys. (2006).

• E. Monroy, F. Calle, R. Ranchal, T. Palacios, M. Verdú, F. J. Sánchez, M. T. Montojo, M. Eickhoff, F. Omnès, Z. Bougrioua and I. Moerman: “Reliability of Pt and Ni based Schottky contacts on AlGaN”, Semic. Sci. and Tech., 2002, vol 17 No 9 , L47-L54.

• J. Rubio-Zuazo, R.J. Jiménez-Rioboó, E. Rodríguez-Cañas, C. Prieto, T. Palacios, F. Calle, E. Monroy and M. A. Sánchez-García: “Brillouin Characterization of the Acousticwaves Phase-Velocity in AlxGa1-xN Epilayers”. Mat. Sci. Eng. B., 2002, vol. 93, 1-3, pp. 168-171.

• R. J. Jiménez Riboo, E. Rodríguez-Cañas, M. Vila, C. Prieto, F. Calle, T. Palacios, M. A. Sánchez, F. Omnès, O. Ambacher, B. Assouar and O. Elmazria: “Hypersonic characterization of sound propagation velocity in AlGaN thin films”. J. Appl. Phys., 2002, vol. 92, pp. 6868-6874.

• Z. Bougrioua, I. Moerman, L. Nistor, B. van Daele, E. Monroy, T. Palacios, F. Calle and M. Leroux: “Engineering of an Insulating Buffer and Use of AlN Interlayers: Two Optimisations for AlGaN/GaN HEMT-Like Structures”, phys. stat. sol. (a), no. 3, 2003, pp. 93-100.

• A. M. Sánchez, F. J. Pacheco, S. I. Molina, P. Ruterana, F. Calle, T. Palacios, M. A. Sánchez-García, E. Calleja and R. García: “AlN Buffer Layer Thickness Influence on Inversion Domains in GaN/AlN/Si (111)”. Mat. Sci. Eng. B., 2002, vol. 93, 1-3, pp. 181-184.

CONFERENCE CONTRIBUTIONS

• T. Palacios, “Steps towards 300 GHz GaN amplifiers”, WOCSEMMAD 2008, Palm Springs , CA , Feb. 17-20, 2008.

• X. Zhao, J. W. Chung, and T. Palacios, “Atomic Layer Etching of AlGaN/GaN Structures”, International Conference on Nitride Semiconductors, Las Vegas, NV, Sept. 17-21, 2007. Oral presentation.

• X. Zhao, J. W. Chung, and T. Palacios, “Increase of Electron Velocity in GaN HEMTs by Electric Field Engineering”, International Conference on Nitride Semiconductors, Las Vegas, NV, Sept. 17-21, 2007. Poster presentation.

• J. W. Chung, X. Zhao, and T. Palacios, “Effect of Image Charges in the Drain Delay of AlGaN/GaN HEMTs”, International Conference on Nitride Semiconductors, Las Vegas , NV , Sept. 17-21, 2007. Poster presentation.

• J. W. Chung, X. Zhao, and T. Palacios, “Estimation of Trap Density in AlGaN/GaN HEMTs from Subthreshold Slope Study”, 65th Device Research Conference, University of Notre Dame, June 18-20, 2007. Poster presentation.

• X. Zhao, J. W. Chung, H. Tang, and T. Palacios, “Schottky Drain AlGaN/GaN HEMTs for mm-wave Applications”, 65th Device Research Conference, University of Notre Dame, June 18-20, 2007. Poster presentation.

• T. Palacios, Z. Xu, J. W. Chung: “Drain Delay: The Ultimate Limit for the Frequency Performance of AlGaN/GaN HEMTs”, 12th Advanced Heterostructure Workshop, Kohala Coast, Big Island of Hawai'I, December 3-8, 2006. Oral presentation.

• T. Palacios, N. Fichtenbaum, S. Keller, S. P. DenBaars, and U. K. Mishra: “50 nm AlGaN/GaN Technology for mm-wave Applications”, 64th Device Research Conference, Penn State University, June 26-28, 2006. Poster presentation.

• T. Palacios, C.-S. Suh, E. Snow, Y. Dora, and U. K. Mishra: “GaN HEMT’s enhanced by Fluorine Treatment”, WOCSEMMAD 2006, Phoenix, AZ, Feb. 20-22, 2006. Oral presentation.

• T. Palacios, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra: “High Power AlGaN/GaN HEMTs for mm-Wave Operation”. Government Microcircuit Applications and Critical Technology Conference, GomacTech 2006, San Diego, March 20-23, 2006. Oral presentation given by Prof. U. K Mishra.

• T. Palacios, E. Snow, Y. Pei, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra: “Ge-spacer Technology in AlGaN/GaN HEMTs for mm-Wave Applications”. International Electron Device Meeting, IEDM-2005, Washington, December 5-7, 2005. Late news paper. Oral Presentation.T. Palacios, S. Rajan, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra: “Dipole Engineering in Nitride-based HEMTs”. 208th Meeting of the Electrochemical Society, Los Angeles, October 16-21 2005. Invited talk.

• T. Palacios, A. Chakraborty, S. Keller, S. P. DenBaars and U. K. Mishra: “Optimization of Device Structure and Harmonic Tuning in AlGaN/GaN HEMTs for High Power Added Efficiency”. International Symposium on Compound Semiconductors, Freiburg, Germany, September 2005. Oral presentation.

• T. Palacios and U. K. Mishra: “Determing electron velocity in GaN-based HEMTs”. 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS-14, Chicago, July 24-29 2005. Oral presentation given by Prof. U. K. Mishra.

• T. Palacios, Y. Dora, A. Chakraborty, C. Sanabria, S. Keller, S. P. DenBaars, and U. K. Mishra: “Optimization of AlGaN/GaN HEMTs for High Frequency Operation”. International Conference on Nitride Semiconductors, ICNS-2005, Bremen, Germany, September 2005. Oral presentation.

• T. Palacios, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra: “AlGaN/GaN HEMTs with an InGaN-based back-barrier”. Device Research Conference, Santa Barbara, June 2005. Oral presentation.

• T. Palacios, L. Shen, S. Keller, A. Chakraborty, S. Heikman, D. Buttari, S. P. DenBaars, and U. K. Mishra: “GaN-spacer HEMTs: the impact of AlGaN in the ve of AlGaN/GaN HEMTs”. 11th Advanced Heterstructure Workshop, Hawai’i, December 2004. Oral presentation given by Prof. U. K. Mishra.

• T. Palacios, L. Shen, S. Keller, A. Chakraborty, S. Heikman, D. Buttari, S.P. DenBaars, and U.K. Mishra: “Demonstration of a GaN-spacer High Electron Mobility Transistor with Low Alloy Scattering”. International Workshop on Nitride Semiconductors, IWN-2004, Pittsburgh, July 2004. Oral presentation.

• T. Palacios, A. Chini, D. Buttari, S. Heikman, S. Keller, S.P. DenBaars, and U.K. Mishra: “Use of Multichannel Heterostructures to Improve the Access Resistance and fT Linearity in GaN-based HEMTs”. Device Research Conference, Notre Dame, June 2004. Oral presentation.

• T. Palacios, S. Rajan, L. Shen, A. Chakraborty, S. Heikman, S. Keller, S.P. DenBaars, and U.K. Mishra: “Influence of the Access Resistance in the rf Performance of mm-wave AlGaN/GaN HEMTs”. Device Research Conference, Notre Dame, June 2004. Poster presentation.

• T. Palacios, F. Calle, J. Grajal, E. Monroy, M. Eickhoff, O. Ambacher, and F. Omnès: “High Frequency SAW Devices on AlGaN: Fabrication, Characterization and Integration with Optoelectronics”. 2002 IEEE International Ultrasonic Symposium. Munich, 8-11 October 2002. Oral presentation given by Prof. F. Calle.

• T. Palacios, F. Calle, E. Monroy, F. Omnès: “Novel Approaches for Submicron Metal-Semiconductor-Metal GaN UV Photodetectors”. Internacional Workshop on Nitride Semiconductors. Aachen, 22-25 July 2002. Oral presentation.

• T. Palacios, E. Monroy, F. Calle, and F. Omnès: “Technology and Performance of Submicron Metal-Semiconductor-Metal GaN Ultraviolet Detectors”. 60th Annual Device Research Conference. Santa Barbara, 24-28 June 2002. Oral presentation.

• T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eickhoff, O. Ambacher, R. Jiménez, and C. Prieto: “AlGaN/Sapphire Epilayers for Acoustic Wave Devices”. 2002 Electronic Materials Conference. Santa Barbara, 28-30 June 2002. Oral presentation.

• T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eickhoff, O. Ambacher, F. Omnès, Z. Bougrioua, I. Moerman and E. Muñoz: “Sub-micron technology in group-III nitrides. Application to electronic devices”. 11th European Heterostructure Technology Workshop. Padova, 28-30 October 2001. Oral presentation.

• T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eickhoff, O. Ambacher and C. Prieto: “Nanotechnology for SAW devices on AlN Epilayers”. 11th International Travelling Summer School in Microwaves and Lightwaves. Madrid, 7-12 July 2001. Oral presentation.

• T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eickhoff, O. Ambacher and C. Prieto: “Nanotechnology for SAW devices on AlN Epilayers”. E-MRS Spring Meeting. Strasbourg, 5-8 June 2001. Poster presentation.

• T. Palacios, F. Calle, E. Monroy, O. Abril, C. Prieto and C. Zaldo: “Design and Processing of SAW Devices on AlN Epilayers”. 3ª Conferencia de Dispositivos Electrónicos. Granada, 15-16 February 2001. Oral presentation.

• C.-S. Suh, T. Palacios, S. Rajan, A. Chini, E. Snow, Y. Dora, L. Shen, C. Poblenz, N. Fichtenbaum, A. Chakraborty, S. Keller, S. DenBaars, J. Speck, and U. K. Mishra: “E-mode GaN HEMTs”. WOCSEMMAD 2006, Phoenix AZ, February 2006. Oral presentation.

• S. Rajan, T. Palacios, S. P. DenBaars, and U. K. Mishra: “Electron Mobility in Graded AlGaN Layers”. WOCSEMMAD 2005, Miami. February 2005. Oral presentation.

• F. Calle, T. Palacios, J. Pedrós and J. Grajal: “Surface-acoustic-waves controlled photodetectors”. 2nd European Workshop on Fibre Optical Sensors. Santander, 9-11 June 2004. Poster presentation.

• F. Calle, T. Palacios, E. Monroy, J. Grajal, J.M. Tirado, A. Jiménez, E. Muñoz, M. Verdú, F. J. Sánchez, M. T. Montojo, Z. Bougrioua and I. Moerman: “Fabrication and characterization of AlGaN/GaN HEMTs”. 4th International Conference on Materials for Microelectronics and Nanoengineering. Espoo, Finland, 10-12 June 2002. Oral presentation.

• M. H. Wong, R. Chu, T. Palacios, S. Rajan, J. S. Speck, and U. K. Mishra: “N-face High Electron Mobility Transistors with a GaN spacer”, submitted to the International Workshop on Nitride Semiconductors, IWN-2005, Kioto, Japan, October 2006.

• C. Sanabria, H. Xu, T. Palacios, A. Chakraborty, S. Heikman, U. K. Mishra, and R. A. York: “Noise Figure Measurement and Modeling of Field-Plated AlGaN/GaN HEMTs”. Submited to International Conference on Nitride Semiconductors, ICNS-2005, Bremen, Germany, August 2005. Poster presentation.

• C. Sanabria, H. Xu, T. Palacios, A. Chakraborty, S. Heikman, U.K. Mishra, R.A. York: “Influence of the Heterostructure Design in Noise Figure of AlGaN/GaN HEMTs”. Device Research Conference, Notre Dame, June 2004. Oral presentation.

• F. Calle, J. Pedrós, T. Palacios, and J. Grajal: “Nitride-bases Surface Acoustic Wave Devices and Applications”. European Meeting of the Material Research Society, E-MRS, Varsovia, Fall 2004. Invited presentation.

• W. Snoeys, G. Anelli and T. Palacios: “New NMOS Layout Structure for Radiation Tolerance”. IEEE Nuclear Science Symposium. San Diego (USA), 4-10 November 2001. Poster presentation.

• E. Monroy, F. Calle, T. Palacios, J. Sánchez-Osorio, M. Verdú, F. J. Sánchez, M. T. Montojo, F. Omnès, Z. Bougrioua and I. Moerman: “Reliability of Schottky contacts on AlGaN”. 4th International Conference on Nitride Semiconductors. Denver, 16-20 July 2001. Oral presentation.

• J. M. Montero, J. Colás, T. Palacios, R. de Córdoba, J. Macías and A. de Santos: “El Laboratorio en casa: un Sistema de Desarrollo basado en el Microcontrolador 68331, de bajo coste”. Congreso de Tecnologías Aplicadas a la Enseñanza de la Electrónica TAEE'2000 vol. II pp. 381-384, September 2000, Barcelona. ISBN: 84-600-9596-7 edited by Gabriel Abadal and Nuria Varonil (ETS Enginyeria- UAB). Oral presentation.

• A. Matulionis, J. Liberis, O. Kiprijanovic, T. Palacios, A. Chakraborty, S. Keller, and U. K. Mishra: “Effect of alloy scattering on electron drift velocity in GaN HEMTs”, 30th Workshop on Compound Semiconductors Devices and Integrated Circuits (WOCSDICE), Fiskebackskil, Sweden, May 13-17, 2006. Oral presentation.

• M. Singh, Y.-R. Wu, J. Singh, T. Palacios and U. Mishra: “Monte Carlo study of noise scaling in AlGaN/GaN HFETs”. 27th International Conference on the Physics of Semiconductors. Flagstaff, Florida, 26-30 July 2004. Poster presentation.

• J. Grajal, F. Calle, J. Pedrós and T. Palacios: “Voltage controlled SAW filters on 2DEG AlGaN/GaN heterostructures”. 2004 International Microwave Symposium. Fort Worth, Texas, 6-11 June 2004. Oral presentation.

• J. Pedrós, F. Calle, J. Grajal, T. Palacios, A. Jiménez. F. Omnès and Z. Bougrioua: “SAW devices on 2DEG AlGaN/GaN heterostructures”, 12th European Workshop on Heterostructure Technology (heTech 2003). Segovia (Spain), 12-15 October 2003.

• F. Recht, L. McCarthy, S. Rajan, A. Chakraborty, T. Palacios, C. Poblenz, J. S. Speck, and U. K. Mishra: “Origin of the Resistance in Unalloyed Ion Implanted Ohmics in AlGaN/GaN HEMTs”, International Symposium on Compound Semiconductors, Vancouver (Canada), 13-17 August 2006.

• A. Chini, D. Buttari, R. Coffie, L. Shen, T. Palacios, S. Heikman, A. Chakraborty, S. Keller, and U. K. Mishra: “Effect of Gate Recessing on the Linearity Characteristics of AlGaN/GaN HEMTs”. Device Research Conference, Notre Dame, June 2004. Oral presentation.

• J. Rubio-Zuazo, R.J. Jiménez-Rioboó, E. Rodríguez-Cañas, C. Prieto, T. Palacios, F. Calle, E. Monroy and M. A. Sánchez-García: “Brillouin Characterization of the Acoustic waves Phase-Velocity in AlxGa1-xN Epilayers”. E-MRS Spring Meeting. Strasbourg, 5-8 June 2001. Poster presentation.

• D. Buttari, A. Chini, A. Chakraborty, L. McCarthy, H. Xing, T. Palacios, L. Shen, S. Keller, and U. K. Mishra: “Selective dry etching of GaN over AlGaN in BCl3/SF6 mixtures”. Lester Eastman Conference on High Performance Devices. Troy, NY, 4-6 August 2004. Oral presentation.

• S. Rajan, H. Xing, A. Chakraborty, A. Chini, M. J. Grundmann, T. Palacios, S. P. DenBaars, D. Jena, and U. K. Mishra: “Tailoring the Transconductance Profile for Improved Linearity in AlGaN/GaN Polarization-Doped Field Effect Transistors”. International Workshop on Nitride Semiconductors, IWN-2004, Pittsburgh, July 2004. Oral presentation.

• Z. Bougrioua, I. Moerman, L. Nistor, B. van Daele, E. Monroy, T. Palacios, F. Calle and M. Leroux: “Engineering of an Insulating Buffer and Use of AlN Interlayers: Two Optimisations for AlGaN/GaN HEMT-Like Structures”. Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC, Budapest, May 2002. Oral presentation.

• M. Eickhoff, O. Ambacher, G. Steinhoff, J. Schalwig, R. Neuberger, T. Palacios, E. Monroy, F. Calle, G. Müller and M. Stutzmann: “Novel Sensor Applications of group-III nitrides”. MRS Fall Meeting, Boston 2001. Invited talk.

• F. Calle, E. Monroy, J. M. Tirado, R. Ranchal, A. Jiménez, T. Palacios, E. Muñoz, J. Grajal, M. Verdú, F. J. Sánchez, M. T. Montojo, Z. Bougrioua and I. Moerman: “Fabrication and characterization of AlGaN/GaN HEMTs”. 11th European Heterostructure Technology Workshop. Padova, 28-30 October 2001. Oral presentation.

• A. M. Sánchez, F. J. Pacheco, S. I. Molina, P. Ruterana, F. Calle, T. Palacios, M. A. Sánchez-García, E. Calleja and R. Garcia: “AlN Buffer Layer Thickness Influence on Inversion Domains in GaN/AlN/Si (111)”. E-MRS Spring Meeting. Strasbourg, 5-8 June 2001. Poster presentation.

• A. M. Sánchez, P. Ruterana, S. I. Molina, F. J. Pacheco, R. García, F. Calle, T. Palacios, M. A. Sánchez-García, E. Calleja: “Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si (111) grown by MBE”. MRS Fall Meeting. Boston, 2-6 November 2002. Poster presentation.