############################
Sample: VB138
Date: 8/23/11
Purpose:
To grow a GaSb/AlGaAsSb SL to determine the cladding and core layer compositions for 2.0 and 2.7um lasers
40nm Ga2Sb/80 nm Al0.8Ga2As0.07Sb / 40 nm Ga1Sb / 80nm Al0.3Ga1As0.027Sb on GaSb
Note there is a GaSb layer associated with each AlGaAsSb layer
The AlGaAsSb layers are designed to be lattice matched to GaSb
Ga1 and Ga2 tips are 150C hotter than the base
No DRS
WVASE Exists
Xray Data Exists
############################
Sample: VB137
Date: 8/18/11
Purpose:
To grow a GaSb/AlGaAsSb SL to determine the core layer compositions for 2.0 and 2.7um lasers
40nm Ga1Sb/80 nm Al0.8Ga2As0.07Sb
Note there is a GaSb layer associated with each AlGaAsSb layer
The AlGaAsSb layers are designed to be lattice matched to GaSb
Ga1 and Ga2 tip are 150C hotter than the base
No DRS
WVASE Exists
Xray Data Exists
############################
Sample: VB136
Date: 8/15/11
Purpose:
To grow a GaSb/AlGaAsSb SL to determine the core layer compositions for 2.0 and 2.7um lasers
40nm Ga2Sb/80 nm Al0.3Ga2As0.027Sb
Note there is a GaSb layer associated with each AlGaAsSb layer
The AlGaAsSb layers are designed to be lattice matched to GaSb
Ga2 tip is 150C hotter than the base
No DRS
WVASE Exists
Xray Data Exists
############################
Sample: VB135
Date: 8/9/11
Purpose:
To grow a GaSb/AlGaAsSb SL to determine the cladding and core layer compositions for 2.0 and 2.7um lasers
40nm Ga2Sb/80 nm Al0.8Ga2As0.07Sb / 40 nm Ga1Sb / 80nm Al0.3Ga1As0.027Sb on GaSb
Note there is a GaSb layer associated with each AlGaAsSb layer
The AlGaAsSb layers are designed to be lattice matched to GaSb
Ga1 and Ga2 tips are 150C hotter than the base
No DRS
No WVASE (too rough)
Xray Data Exists
############################
Sample: VB134
Date: 7/6/11
Purpose:
Te and Be SIMS Doping Calibration Film using Ga1 on GaSb
Te valve opened three revolutions
Film grown without breaks and with AlGaSb layers between the doped layers
Ga2 tip is 150C hotter than the base; Al tip is 240 C cooler than the base
No DRS
WVASE Exists
Xray Data Exists
############################
Sample: VB133
Date: 7/5/11
Purpose:
Te and Be SIMS Doping Calibration Film using Ga1 on GaSb
Te valve openned one revolution
Film grown without breaks and with AlGaSb layers between the doped layers
Ga1 tip is 150C hotter than the base; Al tip is 240 C cooler than the base
No DRS
WVASE Exists
Xray Data Exists
############################
Sample: VB132
Date: 6/22/11
Purpose:
OAWG AWG Structure
Should be identical to VA107 (VA68 and VB52)
MOS structure with Al0.27Ga0.73As/Al0.17Ga0.83As dilute waveguide core
Ga tips are 150C hotter than the base; AL tip is 220 cooler than the base
############################
Sample: VB131
Date: 6/21/11
Purpose:
Calibration of In2 Sb fudge factor via a InGaSb PL Structure
This film is grown on GaSb. Similar to VB130
Ga2 and In2 tips are 150C hotter than the base; Al tip is 240 C cooler than the base
No DRS
WVASE Exists
PL Exists
Xray Data Exists
############################
Sample: VB130
Date: 6/15/11
Purpose:
Calibration of In1 Sb fudge factor via a InGaSb PL Structure
This film is grown on GaSb.
Ga1and In1 tips are 150C hotter than the base; Al tip is 240 C cooler than the base
No DRS
WVASE Exists
PL Exists
Xray Data Exists
############################
Sample: VB129
Date: 6/14/11
Purpose:
To Grow A GaSb/AlGaAsSb SL to determine the Sb growth rate fudge factor to GaAs
20nm Ga1Sb/30 nm Al0.2Ga1As0.04Sb / 20 nm Ga2Sb / 30nm Al0.4Ga2As0.04Sb on 500nm GaSb on GaAs
Note there is a GaSb layer associated with each AlGaAsSb layer
The AlGaAsSb layers are not perfectly lattice matched to GaSb since the same As content was used.
Ga1 and Ga2 tips are 150C hotter than the base
No DRS
WVASE Exists
Xray Data Exists
############################
Sample: VB128
Date: 6/13/11
Purpose:
To Verifiy the calibration of the In1 and In2 cells via a strained InGaAs/InGaAs structure on InP
No P cell so all layers contained As
Similar to VB122
Ga1, Ga2, In1 and In2 tips are 150C hotter than the base
No DRS
WVASE Exists
PL Data Exists
Xray Data Exists
############################
Sample: VB127
Date: 6/9/11
Purpose:
Basically a repeat of VB125 and VB126 but during the GaSb the growth rate is increased
GaAsSb layers are being grown slowly with Ga2
GaSb is being first grown with Ga2 at ~0.33um/hr then with Ga1 at ~0.67 um /hr then finally with both Ga1 and Ga2
Sample became hazy when both Ga1 and Ga2 were open
Ga1 and Ga2 tips are 150C hotter than the base
No DRS
WVASE Exists
Xray Data Exists
############################
Sample: VB126
Date: 6/8/11
Purpose:
Basically a repeat of VB125 but with a higher Sb Flux
Significantly less N2 coming from the Sb source
Film is being grown slowly with Ga2
Ga2 tip is 150C hotter than the base
No DRS
WVASE Exists
Xray Data Exists
############################
Sample: VB125
Date: 6/7/11
Purpose:
Basically a repeat of VB124 but with a different Sb Cracker Temp (Same as VB113)
Significantly less N2 coming from the Sb source
Film is being grown slowly with Ga2
For the first 65 min of the first GaAsSb layer the As valve was at 90 as opposed to 95.
Fir the last 55 min of the first GaAsSb layer the As valve was at 95
Ga2 tip is 150C hotter than the base
No DRS
WVASE Exists
Xray Data Exists
############################
Sample: VB124
Date: 6/1/11
Purpose:
To test the 2000cc Valved Sb crkr
Somewhat based on VB113
Ga2 tip is 150C hotter than the base
No DRS
WVASE Exists
Xray Data Exists
############################
Sample: VB123
Date: 5/23/11
Purpose:
To grow an oxidable 2400nm SBR
Mirror based on VA175. Saturable Aborber section based on VA172
GaAs thickness (180nm) and AlAs thickness (412nm)
Ga#1As/AlAs SL
Sample Grown Over night unsupervised
Ga1 tip is 150C hotter than the base; Al tip is 240C COLDER than the base.
No DRS
WVASE Exists
Reflectivity Exists
Xray Data Exists
############################
Sample: VB122
Date: 5/12/11
Purpose:
To Verifiy the calibration of the In1 and In2 cells via a strained InGaAs/InGaAs structure on InP
No P cell so all layers contained As
Ga1, Ga2, In1 and In2 tips are 150C hotter than the base
No DRS
WVASE Exists
PL Data Exists
Xray Data Exists
############################
Sample: VB121
Date: 5/4/11
Purpose:
Calibration of In2 via a InGaAs PL Structure
Guess as the In content
Ga2 and In2 tips are 150C hotter than the base; Al tip is 240 C cooler than the base
No DRS
WVASE Exists
PL Data Exists
Xray Data Exists
############################
Sample: VB120
Date: 5/3/11
Purpose:
Calibration of In1 via a InGaAs PL Structure
Guess as the In content
Ga1and In1 tips are 150C hotter than the base; Al tip is 240 C cooler than the base
No DRS
WVASE Exists
PL Exists
Xray Data Exists
############################
Sample: VB119
Date: 4/28/11
Purpose:
Calibration of In2 via a Saturable absorber section for a 2.45um SBR
Similar to VB118 but with a higher growth rate
Ga2 and In2 tips are 150C hotter than the base
No DRS
WVASE Exists
Xray Data Exists
############################
Sample: VB118
Date: 4/27/11
Purpose:
Calibration of In1 via a Saturable absorber section for a 2.45um SBR
Ga1and In1 tips are 150C hotter than the base
No DRS
WVASE Exists
Xray Data Exists
############################
Sample: VB117
Date: 4/20/11
Purpose:
Verification of Ga1, Ga2 and Al Calibration via a 4 repeating layer SL structure (repeat 4 layers 7 times)
Ga1AlAs/Ga1As/Ga2AlAs/Ga2As
Ga2 tip is 150C hotter than the base (power supply limiting current to 8A, 55V even at 100%); Al tip is 240C COLDER than the base.
No DRS
WVASE Exists
Xray Data Exists
############################
Sample: VB116
Date: 4/19/11
Purpose:
Calibration of Ga2 and Al sources via a 3 pair SL
GaAs thickness (~115nm) and AlAs thickness (~250nm) are close to a 1.55um DBR mirror stack
Ga#2As/AlAs SL
Ga2 tip is 150C hotter than the base (power supply limiting current to 8A, 55V even at 100%); Al tip is 240C COLDER than the base.
No DRS
WVASE Exists
Reflectivity Exists
Xray Data Exists
############################
Sample: VB115
Date: 4/15/11
Purpose:
First Film after MBE repairs
Calibration of Ga1 and Al sources via a 3 pair SL
GaAs thickness (~115nm) and AlAs thickness (~240nm) are close to a 1.55um DBR mirror stack
Ga#1As/AlAs SL
Ga1 tip is 150C hotter than the base; Al tip is 240C COLDER than the base.
No DRS
WVASE Exists
Reflectivity Exists
Xray Data Exists
############################
Sample: VA176
Date: 6/29/10
Purpose:
1550nm Oxidizable SBR Structure with the VA86 Saturable Absorber Section
7 pair GaAs/AlAs DBR
GaAs grown with Ga2
60nm InGaAs grown with In2 and Ga2
Ga1 Cell not working
DRS Exists
Xray Data Exists
WVASE Exists
Spectrophotometer Data Exists
Ga2, In2 tip are 150C hotter than the base; Al tip is 240C colder than the base
############################
Sample: VA175
Date: 6/21/10
Purpose:
2450nm Oxidizable DBR Structure for testing purposes
7 pair GaAs/AlAs DBR
GaAs grown with Ga2
Film Grown over night unsupervised
Ga1 Cell not working
DRS Exists
Xray Data Exists
WVASE Exists
Spectrophotometer Data Exists
Ga2 tipis 150C hotter than the base; Al tip is 240C colder than the base
DRS Exists
Xray Data Exists
WVASE Exists
Spectrophotometer Data Exists
Ga2 tipis 150C hotter than the base; Al tip is 240C colder than the base
############################
Sample: VA173
Date: 6/16/10
Purpose:
OAWG AWG Structure
Should be identical to VA68, VB52, VA107
Grown with only Ga2; there was a 10 min hold for the Ga cell to ramp and stablize prior to use in the core of the dilute waveguide
MOS structure with Al0.27Ga0.73As/Al0.17Ga0.83As dilute waveguide core
DRS exists using GaAsSi.mtl file
PL Exists
WVASE exits
Xray Rocking Curves exist
Reflectivity Data Exist
Ga2 tip is 150C hotter than the base; Al tip is 240 cooler than the base
############################
Sample: VA172
Date: 5/7/10
Purpose:
2450nm SBR Structure: MS 1
18 pair GaAs/AlAs with 2 lambda/2 saturable absorber with a 40 nm InAs layer
GaAs grown with Ga2
InAs grown with In1
Ga1 Cell not working so the DBR contains AlAs as opposed to Al0.95GaAs
DRS Exists
Xray Data Exists
WVASE Exists
Spectrophotometer Data Exists
Ga2 and In1 tips are 150C hotter than the base; Al tip is 240C colder than the base
############################
Sample: VA171
Date: 5/7/10
Purpose:
2450nm SBR Test Structure: MS 1
6 pair GaAs/AlAs with 40nm InAs on top
InAs grown with In1
Note Ga1 tip heater resistance is low (<1 ohm); Insufficient to be used. Cell off
DRS Exists
Xray Data Exists
WVASE Exists
Spectrophotometer Data Exists
Ga2 and In1 tips are 150C hotter than the base; Al tip is 240C colder than the base
############################
Sample: VA170
Date: 5/6/10
Purpose:
2450nm SBR Test Structure: MS 1
6 pair GaAs/Al0.95GaAs with 40nm InAs on top
AlGaAs grown with Ga1 and Al
InAs grown with In1
Note Ga1 tip heater resistance is low. Ran in constant power mode at 15% (16 AMPS); the tip is ~55C cooler than the base
DRS Exists
Xray Data Exists
WVASE Exists
Spectrophotometer Data Exists
Ga2 and In1 tips are 150C hotter than the base; Al tip is 240C colder than the base
Ga1 tip is note working properly
############################
Sample: VA169
Date: 4/14/10
Purpose:
To grow a 1.55um Test Structure
Three Period SL of 8nm InGaAs/30nm InP
The entire structure will be grown at Tc=590 (DRS~490)
Comparison Structures: VA168 and VA165
InP using In1
Lattice matched InGaAs grown with In1 and Ga1
Manual 20min hold prior to the InGaAs to allow the Ga1 tip to restablize
############################
Sample: VA168
Date: 4/9/10
Purpose:
To grow a 1.55um Test Structure
Three Period SL of 8nm InGaAs/30nm InP
The entire structure will be grown at Tc=590 (DRS~490)
InP using In1
Lattice matched InGaAs grown with In1 and Ga1
############################
Sample: VA167
Date: 4/9/10
Purpose:
To grow InAs on GaAs for optical characterization
The material is to be evaluated for use in SBRs
Two wafers grown: Double side polished ~1E16 Doping and Single Side Polished ~1E18 Doping
The single side polished GaAs is the normal growth material
############################
Sample: VA166
Date: 3/30/10
Purpose:
To grow a 2.05um PL Structure with 2 Strained InGaAs QWs
The two InGaAs quantum wells are clad with InGaAlAs
The entire structure will be grown at an intermediate temperature (between VA137 and VA164)
InGaAlAs using In2 and Ga2
InP using In1 or In2
Strained InGaAs grown with both In1 and In2 with Ga1; Lattice matched InGaAs grown with In1 and Ga1
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
DRS Exists
Xray Rocking Curves exists
PL Exists
WVASE Exist but no fit
############################
Sample: VA165
Date: 3/23/10
Purpose:
To grow a 1.55um Test Structure
Four Period SL of 6nm InGaAs/30nm InP
The entire structure will be grown at Tc=590 (DRS~490)
InP using In1
Lattice matched InGaAs grown with In1 and Ga1
In1 and Ga1 tips are 150C hotter than the base
DRS Exists
Xray Rocking Curves exists
PL Exists
WVASE Exist but no fit
############################
Sample: VA164
Date: 3/22/10
Purpose:
To grow a 2.05um PL Structure with 2 Strained InGaAs QWs
The two InGaAs quantum wells are clad with InGaAlAs
The entire structure will be grown at a slightly higher temperature than usual (same temp at VA150)
InGaAlAs using In2 and Ga2
InP using In1 or In2
Strained InGaAs grown with both In1 and In2 with Ga1; Lattice matched InGaAs grown with In1 and Ga1
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
DRS Exists
Xray Rocking Curves exists
PL Exists
WVASE Exist but no fit
############################
Sample: VB114
Date: 3/18/10
Purpose:
Three strained In0.65GaAs QWs with 2ML InSb Quantum Dots embedded in In0.53GaAs on InP
InGaAs buffer layer; no P used in the structure
InSb grown by MEE at T_thermocouple=470C (~400C or so); only 2ML of In Deposited with In2
30 Sb exposures both prior to and after the In deposition
In0.53GaAs grown with In1 and Ga1
Strained InGaAs grown with In1, In2 and Ga1
Same Oxide Desorption method as VB109 (higher maximum temperature since desorbing with an As flux vs a P flux)
Base Line comparison Structure is VB110; VB112 has 1ML InSb Qdots
In1, In2, Ga tips are 150C hotter than the base
No DRS
Xray Data Exists
############################
Sample: VB113
Date: 3/17/10
Purpose:
To Grow two GaAsSb layers with different As concentrations to verify the flux ratio factor relating the flux to concentration
Tsub lowered to ~500C (570C on the thermocouple) in line with GaSb is typically grown.
The Sb flux is noisy
Ga1 tip is 150C hotter than the base
No DRS
Xray Data Exists
############################
Sample: VA163
Date: 3/5/10
Purpose:
To grow a 1.95um laser with 3 In0.70GaAs QWs
Corresponding PL structure is VA161; Corresponding Laser Structures are VA162 (1.95um), VA150 and VA152 (1.55um), VA153 and VA154 (1.75um) amd VA158 and VA159 (1.85um)
2 wafers grown; one is to be shipped to Covega for Processing
Laser design: collaborative effort of KACST and Covega
InGaAlAs using In2 and Ga2
InP using In1 and In2
InGaAs grown with In1, In2 and Ga1
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
############################
Sample: VA162
Date: 3/5/10
Purpose:
To grow a 1.95um laser with 2 In0.76GaAs QWs
Corresponding PL structure is VA161; Corresponding Laser Structures are VA150 and VA152 (1.55um) , VA153 and VA154 (1.75um) and VA158 and VA159 (1.85um)
2 wafers grown; one is to be shipped to Covega for Processing
Laser design: collaborative effort of KACST and Covega
InGaAlAs using In2 and Ga2
InP using In1 and In2
InGaAs grown with In1, In2 and Ga1
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
############################
Sample: VA161
Date: 3/3/10
Purpose:
To grow a 1.95um PL Structure with 2 Strained In0.77GaAs QWs
The two In0.77GaAs quantum wells are clad with InGaAlAs
The entire structure will be grown at a slightly higher temperature than usual (same temp at VA150)
InGaAlAs using In2 and Ga2
InP using In1 or In2
InGaAs grown with both In1 and In2 with Ga1
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
DRS Exists
Xray Rocking Curves exists
PL Exists; 1968nm on the 2mV scale
WVASE Exist but no fit
############################
Sample: VA160
Date: 3/2/10
Purpose:
To grow InAs on GaAs for optical characterization
The material is to be evaluated for use in SBRs
Repeat of VA157 except the InAs will be grown at a lower Tsub (400C) in attempt to maintain a specular surface
############################
Sample: VA159
Date: 2/27/10
Purpose:
To grow a 1.85um laser with 3 In0.70GaAs QWs
Corresponding PL structure is VA156; Corresponding Laser Structures are VA158 (1.85um), VA150 and VA152 (1.55um), and VA153 and VA154 (1.75um)
2 wafers grown; one is to be shipped to Covega for Processing
Laser design: collaborative effort of KACST and Covega
InGaAlAs using In2 and Ga2
InP using In1 and In2
InGaAs grown with In1, In2 and Ga1
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
############################
Sample: VA158
Date: 2/26/10
Purpose:
To grow a 1.85um laser with 2 In0.75GaAs QWs
Corresponding PL structure is VA156; Corresponding Laser Structures are VA150 and VA152 (1.55um) and VA153 and VA154 (1.75um)
2 wafers grown; one is to be shipped to Covega for Processing
Laser design: collaborative effort of KACST and Covega
InGaAlAs using In2 and Ga2
InP using In1 and In2
InGaAs grown with In1, In2 and Ga1
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
############################
Sample: VA157
Date: 2/23/10
Purpose:
To grow InAs on GaAs for optical characterization
The material is to be evaluated for use in SBRs
Two wafers grown: Double side polished ~1E16 Doping and Single Side Polished ~1E18 Doping
The single side polished GaAs is the normal growth material
############################
Sample: VA156
Date: 2/23/10
Purpose:
To grow a 1.9um PL Structure with 2 Strained In0.7GaAs QWs
The two In0.7GaAs quantum wells are clad with InGaAlAs
The entire structure will be grown at a slightly higher temperature than usual (same temp at VA150)
InGaAlAs using In2 and Ga2
InP using In1 or In2
InGaAs grown with both In1 and In2 with Ga1
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
DRS Exists
Xray Rocking Curves exists
PL Exists; Pk at 1867 on the 2mV scale
WVASE Exist but no fit
############################
Sample: VA155
Date: 2/22/10
Purpose:
To grow InAs on GaAs for optical characterization
The material is to be evaluated for use in SBRs
Two wafers grown: Double side polished ~1E16 Doping and Single Side Polished ~1E18 Doping
The single side polished GaAs is the normal growth material
ERROR in Recipe: instead of InAs, InGaAs was grown
############################
Sample: VA154
Date: 2/19/10
Purpose:
To grow a 1.75um laser with 3 In0.65GaAs QWs
Corresponding PL structure is VA151; Corresponding Laser Structures are VA153 and 1.55 um versions: VA150 and VA152
2 wafers grown; one is to be shipped to Covega for Processing
Laser design: collaborative effort of KACST and Covega
InGaAlAs using In2 and Ga2
InP using In1 and In2
InGaAs grown with In1, In2 and Ga1
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
############################
Sample: VA153
Date: 2/19/10
Purpose:
To grow a 1.75um laser with 2 In0.65GaAs QWs
Corresponding PL structure is VA151; Corresponding Laser Structures are VA150 and VA152
2 wafers grown; one is to be shipped to Covega for Processing
Laser design: collaborative effort of KACST and Covega
InGaAlAs using In2 and Ga2
InP using In1 and In2
InGaAs grown with In1, In2 and Ga1
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
############################
Sample: VA152
Date: 2/17/10
Purpose:
To grow a 1.55um laser with 3 In0.53GaAs QWs
The three InGaAs quantum wells are clad with InGaAlAs vs 2 QWs from VA150
2 wafers grown; one is to be shipped to Covega for Processing
Laser design: collaborative effort of KACST and Covega
InGaAlAs using In2 and Ga2
InP using In1 and In2
InGaAs grown with In1 and Ga1
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
############################
Sample: VA151
Date: 2/17/10
Purpose:
To grow a 1.9um PL Structure with 2 Strained In0.7GaAs QWs
The two In0.7GaAs quantum wells are clad with InGaAlAs
First Structure grown on InPACT wafers
The entire structure will be grown at a slightly higher temperature than usual (same temp at VA150)
InGaAlAs using In2 and Ga2
InP using In1 or In2
InGaAs grown with both In1 and In2 with Ga1
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
DRS Exists
Xray Rocking Curves exists
PL Exists; Pk at 1753 on the 1mV scale
WVASE Exist but no fit
############################
Sample: VB112
Date: 2/10/10
Purpose:
Three strained In0.65GaAs QWs with InSb Quantum Dots embedded in In0.53GaAs on InP
InGaAs buffer layer; no P used in the structure
InSb grown by MEE at T_thermocouple=470C (~400C or so); only 1ML of In Deposited with In2
30 Sb exposures both prior to and after the In deposition
In0.53GaAs grown with In1 and Ga1
Strained InGaAs grown with In1, In2 and Ga1
Same Oxide Desorption method as VB109 (higher maximum temperature since desorbing with an As flux vs a P flux)
Base Line comparison Structure is VB110
In1, In2, Ga tips are 150C hotter than the base
No DRS
Xray Data Exists
############################
Sample: VB111
Date: 2/8/10
Purpose:
To Grow three GaAsSb layers with different As concentrations to determine the flux ratio factor relating the flux to concentration
As flux lowered by roughly 80%, 60% and 40% from the usual flux for GaAs
Tsub lowered to ~500C (570C on the thermocouple) in line with GaSb is typically grown.
The Sb flux is noisy
Ga1 tip is 150C hotter than the base
No DRS
Xray Data Exists
############################
Sample: VB110
Date: 2/5/10
Purpose:
Three strained In0.65GaAs QWs embedded in In0.53GaAs on InP
InGaAs buffer layer; no P used in the structure
This film will be the base line structure for InSb QD structure
In0.53GaAs grown with In1 and Ga1
Strained InGaAs grown with In1, In2 and Ga1
Same Oxide Desorption method as VB109 (higher maximum temperature since desorbing with an As flux vs a P flux)
In1, In2, Ga tips are 150C hotter than the base
No DRS
Xray Data Exists
############################
Sample: VB109
Date: 2/5/10
Purpose:
Three strained In0.65GaAs QWs embedded in In0.53GaAs on InP
InGaAs buffer layer; no P used in the structure
This film will be the base line structure for InSb QD structure
In0.53GaAs grown with In1 and Ga1
Strained InGaAs grown with In1, In2 and Ga1
Oxide Desorbed at a higher maximum temperature since desorbing with an As flux vs a P flux
In1, In2, Ga tips are 150C hotter than the base
No DRS
Xray Data Exists
############################
Sample: VB108
Date: 2/3/10
Purpose:
Three strained In0.65GaAs QWs embedded in In0.53GaAs on InP
InGaAs buffer layer; no P used in the structure
This film will be the base line structure for InSb QD structure
In0.53GaAs grown with In1 and Ga1
Strained InGaAs grown with In2 and Ga1
From Xray, the Ga concentration is too high
Wafer 23 was left in the platen ungrown; It was found went Wafer 21 was unloaded
In1, In2, Ga1 tips are 150C hotter than the base
No DRS
Xray Data Exists
Reflectivity Data Exists
############################
Sample: VA150
Date: 1/20/10
Purpose:
To grow a 1.55um laser with 2 In0.54GaAs QWs
The two InGaAs quantum wells are clad with InGaAlAs
2 wafers grown; one is to be shipped to Covega for Processing
Laser design: collaborative effort of KACST and Covega
InGaAlAs using In2 and Ga2
InP using In1 and In2
InGaAs grown with In1 and Ga1
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
DRS Exists
Xray Rocking Curves exists
PL Exists
############################
Sample: VA149
Date: 1/15/10
Purpose:
To grow two In0.53GaAs quantum wells in a InGaAlAs based PL Structure at Tc=570C
InGaAlAs=60nm using In2 and Ga2
InP = 60nm using In1; 180nm Buffer with In2
InGaAs grown with In1 and Ga1
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
DRS Exists
Xray Rocking Curves exists
PL Exists
############################
Sample: VA148
Date: 1/8/10
Purpose:
1550nm SBR Structure: MS 1a
An additional 20nm of GaAs on two of the VA147 SBRs
GaAs grown with Ga1
DRS Exists
Xray Data Exists
WVASE Exists
Spectrophotometer Data Exists
Ga1 tip is 150C hotter than the base
############################
Sample: VA147
Date: 12/17/09
Purpose:
1550nm SBR Structure: MS 1
22 pair GaAs/Al0.95GaAs with 2 lambda/2 saturable absorber with a 70 nm In0.53GaAs layer
AlGaAs grown with Ga2 and Al
InGaAs grown with Ga1 and In1
NOTE: the GaAs cladding layers in the SA section are 70nm thick vs the desired 78nm thick
DRS Exists
Xray Data Exists
WVASE Exists
Spectrophotometer Data Exists
Ga1, Ga2 and In1 tips are 150C hotter than the base; Al tip is 240C colder than the base
############################
Sample: VA146
Date: 12/11/09
Purpose:
To grow In0.53GaAs on GaAs for optical characterization
The material is to be evaluated for use in SBRs
Two wafers grown: Double side polished ~1E16 Doping and Single Side Polished ~1E18 Doping
The single side polished GaAs is the normal growth material
Grown in In1 and Ga1 immediately after VA145; same fluxes
DRS Exists
Xray Rocking Curves exists
Wvase Exist but no fit
############################
Sample: VA145
Date: 12/11/09
Purpose:
To grow a 2.1um laser with 2 Strained In0.85GaAs QWs
The two In0.85GaAs quantum wells are clad with InGaAlAs
3 wafers grown; two are to be shipped to Covega for Processing
Laser design: collaborative effort of KACST and Covega
InGaAlAs using In2 and Ga2
InP using In1 and In2
InGaAs grown with both In1 and In2 with Ga1
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
DRS Exists
Xray Rocking Curves exists
Wvase Exist but no fit
PL Exists
############################
Sample: VA144
Date: 12/9/09
Purpose:
To grow Three In0.85GaAs quantum wells in a InGaAlAs based PL Structure at Tc=590
InGaAlAs=60nm using In2 and Ga2
InP = 60nm using In1; 180nm using In2
InGaAs grown with both In1 and In2 with Ga1
To be compared to VA134, VA135, VA136, VA137, VA138, VA143
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
DRS Exists
Xray Rocking Curves exists
Wvase Exist but no fit
PL Exists
############################
Sample: VA143
Date: 12/9/09
Purpose:
To grow two In0.85GaAs quantum wells in a InGaAlAs based PL Structure at Tc=570C
InGaAlAs=60nm using In2 and Ga2
InP = 60nm using In1; 180nm Buffer with In2
InGaAs grown with both In1 and In2 with Ga1
To be compared to VA137 and VA138
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
DRS Exists
Xray Rocking Curves exists
Wvase Exist but no fit
PL Exists
############################
Sample: VA142
Date: 11/23/09
Purpose:
To grow an AFM structure: 3ML InAs Qdots on In0.75GaAs on a InGaAlAs
InGaAlAs=60nm using In2 and Ga2
InP = 180nm using In1
InGaAs grown with both In1 and In2 with Ga1
InAs Qdots grown with In1
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
DRS Exists
Xray Rocking Curves exists
Wvase Exist but no fit
PL Exists
############################
Sample: VA141
Date: 11/23/09
Purpose:
To grow two In0.75GaAs quantum wells with InAs Quantum Dots in a InGaAlAs based PL Structure at Tc=570C
InGaAlAs=60nm using In2 and Ga2
InP = 60nm using In1
InGaAs grown with both In1 and In2 with Ga1
InAs quantum dots grown with In1=3ML=0.9nm
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
DRS Exists
Xray Rocking Curves exists
Wvase Exist but no fit
PL Exists
############################
Sample: VA140
Date: 11/13/09
Purpose:
To grow two In0.9GaAs quantum wells in a InGaAlAs based PL Structure at Tc=530
InGaAlAs=60nm using In2 and Ga2
InP = 60nm using In1
InGaAs grown with both In1 and In2 with Ga1
To be compared to VA134, VA135, VA136, VA137, VA138 and VA139
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
DRS Exists
Xray Rocking Curves exists
Wvase Exist but no fit
PL Exists
############################
Sample: VA139
Date: 11/13/09
Purpose:
To grow two In0.9GaAs quantum wells in a InGaAlAs based PL Structure at Tc=550C
InGaAlAs=60nm using In2 and Ga2
InP = 60nm using In1
InGaAs grown with both In1 and In2 with Ga1
To be compared to VA134, VA135, VA136, VA137 and VA138
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
DRS Exists
Xray Rocking Curves exists
Wvase Exist but no fit
PL Exists
############################
Sample: VA138
Date: 11/10/09
Purpose:
To grow two In0.85GaAs quantum wells in a InGaAlAs based PL Structure at Tc=590
InGaAlAs=60nm using In2 and Ga2
InP = 60nm using In1
InGaAs grown with both In1 and In2 with Ga1
To be compared to VA134, VA135, VA136, VA137
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
DRS Exists
Xray Rocking Curves exists
Wvase Exist but no fit
PL Exists
############################
Sample: VA137
Date: 11/10/09
Purpose:
To grow two In0.85GaAs quantum wells in a InGaAlAs based PL Structure at Tc=570C
InGaAlAs=60nm using In2 and Ga2
InP = 60nm using In1
InGaAs grown with both In1 and In2 with Ga1
To be compared to VA134, VA135, VA136
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
DRS Exists
Xray Rocking Curves exists
Wvase Exist but no fit
PL Exists
############################
Sample: VA136
Date: 10/16/09
Purpose:
To grow two In0.9GaAs quantum wells in a InGaAlAs based PL Structure
InGaAlAs=60nm using In2 and Ga2
InP = 60nm using In1
InGaAs grown with both In1 and In2 with Ga1
To be compared to VA134 and VA135
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
No DRS
Xray Rocking Curves exists
Wvase Exist but no fit
PL Exists
############################
Sample: VA135
Date: 10/16/09
Purpose:
To grow two In0.8GaAs quantum wells in a InGaAlAs based PL Structure
InGaAlAs=60nm using In2 and Ga2
InP = 60nm using In1
InGaAs grown with both In1 and In2 with Ga1
To be compared to VA134
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
No DRS
Xray Rocking Curves exists
Wvase Exist but no fit
PL Exists
############################
Sample: VA134
Date: 10/16/09
Purpose:
To grow two In0.65GaAs quantum wells in a InGaAlAs based PL Structure
InGaAlAs=60nm using In2 and Ga2
InP = 60nm using In1
InGaAs grown with both In1 and In2 with Ga1
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
No DRS
Xray Rocking Curves exists
Wvase Exist but no fit
PL Exists
############################
Sample: VA133
Date: 10/14/09
Purpose:
To grow a test structure suitable for testing electrical contacts
100nm InGaAs lattice matched to 500nm of undoped InP
In1 and Ga1 tips are 150C hotter than the base
DRS exists used but only the initial wafer yield meaningful data
Xray Rocking Curves exists
Wvase Exist
PL Exists
############################
Sample: VA132
Date: 10/9/09
Purpose:
To grow a 10 pair InGaAlAs/ InP SL to verify the In cell calibratation and to determine lattice matched InGaAlAs
InGaAlAs=50nm using In2 and Ga2
InP = 50nm using In1
In1, In2 and Ga2 tips are 150C hotter than the base; Al tip is 240 cooler than the base
DRS exists used but only the initial wafer yield meaningful data
Xray Rocking Curves exists
Wvase Exist
PL Exists
############################
Sample: VA131
Date: 10/8/09
Purpose:
To grow a 5 pair InGaAs/ InP SL to calibrate the In cells
InGaAs=30nm using In2 and Ga2
InP = 60nm using In1
In1, In2 and Ga2 tips are 150C hotter than the base
############################
Sample: VA129
Date: 10/2/09
Purpose:
To grow the saturable absorber QW of a 910nm SBR within a PL structure
Approx 60nm Al0.3GaAs Cladding layers with approx 80nm GaAs "waveguide" layers
MQW=6nm In0.15GaAs with 20nm GaAs barriers
In2 and Ga2 tips are 150C hotter than the base; Al tip is 250C COLDER than the base.
############################
Sample: VA128
Date: 10/1/09
Purpose:
To grow the saturable absorber section of a 910nm SBR within a PL structure
Approx 60nm Al0.3GaAs Cladding layers with approx 20nm Al0.17GaAs "waveguide" layers
QW=6nm In0.15GaAs
Ga1, In2 and Ga2 tips are 150C hotter than the base; Al tip is 250C COLDER than the base.
############################
Sample: VA127
Date: 9/30/09
Purpose:
850nm MQW Laser structure for Elisabeth Marley at SMU
SCH with Al0.4GaAs cladding layers; Al0.33GaAs barriers and three 10nm thick GaAs quantum wells
Design provided by Elisabeth
4 wafers were grown but three are slated to go to SMU
Ga2, In1 and Ga1 tips are 150C hotter than the base; Al tip is 250C COLDER than the base.
DRS exists
Xray Rocking Curves exists
Wvase Exist
############################
Sample: VA126
Date: 9/29/09
Purpose:
Saturable Absorber section of a 910nm SBR
20nm Al0.17GaAs/6nm In0.15GaAs/15nm Al0.17GaAs/5nm Al0.1GaAs
Designed by Fujimoto's group
Ga2, In1 and Ga1 tips are 150C hotter than the base; Al tip is 250C COLDER than the base.
DRS exists
Xray Rocking Curves exists
Wvase Exist
############################
Sample: VA125
Date: 9/25/09
Purpose:
Calibration of In1, Ga1 and Al sources via a MQW PL Structure
Approx 60nm Al0.3GaAs Cladding layers with approx 80nm GaAs "waveguide" layers
MQW= 3x of 15nm InGaAs with 20nm GaAs barriers
Should be identical to VA124
In1 and Ga1 tips are 150C hotter than the base; Al tip is 250C COLDER than the base.
DRS does not exist
Xray Rocking Curves exists
Wvase Exist
############################
Sample: VA124
Date: 9/24/09
Purpose:
Calibration of In2, Ga2 and Al sources via a MQW PL Structure
Approx 60nm Al0.3GaAs Cladding layers with approx 80nm GaAs "waveguide" layers
MQW= 3x of 15nm InGaAs with 20nm GaAs barriers
In2 and Ga2 tips are 150C hotter than the base; Al tip is 250C COLDER than the base.
DRS does not exist
Xray Rocking Curves exists
Wvase Exist
Spectrophotometer Reflectivity Scans exist
############################
Sample: VA123
Date: 9/22/09
Purpose:
Calibration confirmation of Ga1, Ga2 and Al sources via a 7 pair SL
Ga#1As/AlGa#2As SL
Similar to VA74 and VA75, VA121 and VA122
Ga tips are 150C hotter than the base; Al tip is 250C COLDER than the base.
DRS does not exist
Xray Rocking Curves exists
Wvase Exist
Spectrophotometer Reflectivity Scans exist
############################
Sample: VA122
Date: 9/22/09
Purpose:
Calibration of Ga1, Ga2 and Al sources via a 7 pair SL
Ga#2As/AlGa#1As SL
Similar to VA74, VA75, VA121
Ga tips are 150C hotter than the base; Al tip is 250C COLDER than the base.
DRS does not exist
Xray Rocking Curves exists
Wvase Exist
Spectrophotometer Reflectivity Scans exist
############################
Sample: VA121
Date: 9/21/09
Purpose:
Calibration of Ga1, Ga2 and Al sources via a 7 pair SL
Ga#1As/AlGa#2As SL
Similar to VA74 and VA75
Ga tips are 150C hotter than the base; Al tip is 250C COLDER than the base.
DRS does not exist
Xray Rocking Curves exists
Wvase Exist
Spectrophotometer Reflectivity Scans exist
############################
Sample: VB107
Date: 7/23/09
Purpose:
Single lattice matched InAlAs on InP.. Need to extract information from 1) PL, verify emission peak does not come from the interface layer between InP and InAlAs. 2) High Intensity XRD , based on VB105, VB106, SRO may extist in InAlAs layer. This sample is to reassure this assumption
Single layer on InP, no QW
Ga tips are 150C hotter than the base
No DRS
Xray Data Exists?
WVASE Data ?
Reflectivity Data ?
PL Data Exist
Al0.1GaAs grown with Ga2 and Al
Al0.95GaAs grown with Ga1 and Al
In0.1GaAs grown with Ga2 and In2
Sample Grown unsupervised over nite
DRS Exists
WVASE Exists
Reflectivity Data Exists
Xray Exists
Ga1, Ga2 and In2 tips are 150C hotter than the base; Al tip is 240C colder than the base
############################
Sample: VB106
Date: 7/14/09
Purpose:
Third sample of a serie-VB104, VB105, VB106. Sb flux~2.11e-8 torr with As flux~ 6e-6 Torr in InGaAsSb layer
3 pair InGaAs/InGaAsSb SL, total 3 QWs
Ga tips are 150C hotter than the base
No DRS
Xray Data Exists?
WVASE Data ?
Reflectivity Data ?
PL Data Exist
############################
Sample: VB105
Date: 7/14/09
Purpose:
Second sample of a serie-VB104, VB105, VB106. Sb flux~1.38e-8 torr with As flux~ 6e-6 Torr in InGaAsSb layer
3 pair InGaAs/InGaAsSb SL, total 3 QWs
Ga tips are 150C hotter than the base
No DRS
Xray Data Exists?
WVASE Data ?
Reflectivity Data ?
PL Data Exist
############################
Sample: VB104
Date: 7/14/09
Purpose:
First sample of a serie-VB104, VB105, VB106. Sb-free in InGaAs layer. Single Ga1 and In2 cell is used
3 pair InGaAs/InGaAs SL, total 3 QWs
Ga tips are 150C hotter than the base
No DRS
Xray Data Exists?
WVASE Data ?
Reflectivity Data ?
PL Data Exist
############################
Sample: VA118
Date: 6/26/09
Purpose:
1550nm Qdash Laser Structure #3 with two quat layers and InGaAlAs etch stop
Contact InGaAs layer grown with In2 and Ga1 cells: STRAINED
1190 quat grown with In2 and Ga2
1050 quat grown with In1 and Ga1
with an InGaAlAs etch stop in the upper InP cladding layer
p-type doping increase towards the surface
DRS Exists
PL exists
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base
############################
Sample: VB103
Date: 6/25/09
Purpose:
Standard Sample (Antimony free) for a serie of experiment. Shoot for perfectly lattice matched structure. Only single cell is used for Ga and In to facilitate xray fitting
Time calculation for top two layers are based on RGA spread sheet (reference VB87-VB90). Time calculation for other layers are based on only VB88 VB89 fitting result, corresponding spreadsheet is on Amy's computer.
3 pair InGaAs/InGaAs SL, total 3 QWs
Ga tips are 150C hotter than the base
No DRS
Xray Data Exists?
WVASE Data ?
Reflectivity Data ?
PL Data Exist
############################
Sample: VA117
Date: 6/24/09
Purpose:
1550nm Qdot Laser Structure #1 with two quat layers and InGaAlAs
Contact InGaAs layer grown with In2 and Ga1 cells: STRAINED
1190 quat grown with In2 and Ga2
1050 quat grown with In1 and Ga1
with an InGaAlAs etch stop in the upper InP cladding layer
p-type doping increase towards the surface
DRS Exists
HiInt Xray exists
PL exists
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base
############################
Sample: VA116
Date: 6/19/09
Purpose:
1550nm Qdot Laser Structure #1 with two quat layers and InGaAlAs
Contact InGaAs layer grown with In2 and Ga1 cells: STRAINED
1200 quat grown with In2 and Ga2
1100 quat grown with In1 and Ga1
with an InGaAlAs etch stop in the upper InP cladding layer
p-type doping increase towards the surface
InGaAlAs etch stop had an error: 1.5nm thicker slightly more Ga
DRS Exists
HiInt Xray exists
PL exists
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base
############################
Sample: VA115
Date: 6/18/09
Purpose:
InGaAlAs Property test
In0.5Ga0.4Al0.1As is grown to test it's suitability to be a QW for Quantum dot and Quantum dash structures
Grown with cryo #1 only
The InGaAlAs is grown with In2, Ga1 and Al
DRS Exists
PL Exists
Xray Data Exists
Ga2 and In2 tips are 150C hotter than the base;
############################
Sample: VA114
Date: 6/9/09
Purpose:
InAs QD Test Structure #5
0.75nm of InAs grown on 1.2nm of InGaAlAs on In0.75GaAs0.55P
Below the QD layers is a 25nm InGaAsP/ 10nm InP/25nm InGaAsP
Grown with cryo #1 only
DRS Exists
PL Exists
Xray Data Exists
WVASE Data Exists
Ga1 Ga2 and In2 tips are 150C hotter than the base;
############################
Sample: VA113
Date: 6/9/09
Purpose:
InAs QD Test Structure #5
0.75nm of InAs grown on 1.2nm of InGaAlAs embedded in In0.75GaAs0.55P repeated 3 times
has a 50nm InGaAsP:contact layer
Sample is doped. Grown with cryo #1 only
The InGaAlAs is grown with In2, Ga1 and Al
DRS Exists
PL Exists
Xray Data Exists
Ga1, Ga2 and In2 tips are 150C hotter than the base;
############################
Sample: VA112
Date: 6/2/09
Purpose:
InAs QD Test Structure #4
0.5nm of InAs grown on 0.81nm of InGaAlAs on In0.75GaAs0.55P
Below the QD layers is a 25nm InGaAsP/ 10nm InP/25nm InGaAsP
Grown with cryo #1 only
DRS Exists
PL Exists
Xray Data Exists
WVASE Data Exists
Ga1 Ga2 and In2 tips are 150C hotter than the base;
############################
Sample: VA111
Date: 6/2/09
Purpose:
InAs QD Test Structure #4
0.5nm of InAs grown on 0.5nm of InGaAlAs embedded in In0.75GaAs0.55P repeated 3 times
has a 50nm InGaAsP:contact layer
Sample is doped. Grown with cryo #1 only
The InGaAlAs is grown with In2, Ga1 and Al
DRS Exists
PL Exists
Xray Data Exists
Ga1, Ga2 and In2 tips are 150C hotter than the base;
############################
Sample: VA110
Date: 5/28/09
Purpose:
InAs QD Test Structure #3
1nm of InAs grown on 1nm of GaAs on 25nm of In0.72GaAs0.6P
Below the QD layers is a 25nm InGaAsP/ 10nm InP/25nm InGaAsP
Grown with cryo #1 only
DRS Exists
PL Exists
Xray Data Exists
WVASE Data Exists
Ga2 and In2 tips are 150C hotter than the base;
############################
Sample: VA109
Date: 5/27/09
Purpose:
InAs QD Test Structure #3
1nm of InAs grown on 1nm of GaAs embedded in In0.72GaAs0.6P repeated 3 times
has a 10nm InGaAsP:contact layer
Sample is doped. Grown with cryo #1 only
DRS Exists
PL Exists
Xray Data Exists
Ga2 and In2 tips are 150C hotter than the base;
############################
Sample: VB102
Date: 5/21/09
Purpose:
To test dopant concentration used for mid IR Laser growth on InP. Here is GsAs substrate
Test temperature set at Si:1120C 1080C 1040C Be:800C 830C 860C
Ga tips are 150C hotter than the base
No DRS
Xray Data Exists?
WVASE Data ?
Reflectivity Data ?
PL Data
SIMS data
############################
Sample: VB101
Date: 5/18/09
Purpose:
Same structure and growth condition as vb99. Remove In.52Al.48As cladding to eliminate suspicious absorption in PL test.. Barrier thickness change from 30nm to 20nm to prevent relaxaiton. However, QW relaxation might be another reason for no emission on VB99, for it hadd As BEP 3.35e-6 torr and Sb BEP 5.5e-8 Torr in Active region.
3 pair In.48Ga.42Al.10As/In.6768Ga.3232AsSb SL
Ga tips are 150C hotter than the base
No DRS
Xray Data Exists?
WVASE Data ?
Reflectivity Data ?
PL Data
############################
Sample: VA108
Date: 5/15/09
Purpose:
OAWG Etch Test Structure
This is the top few layers of the OAWG wafers (VA107, VB52,..)
DRS exists using GaAsSi.mtl file
WVASE exists
Xray Exists
Reflectivity Data Exists
PL Exists
Ga2 tip is 150C hotter than the base; Al tip is 240 cooler than the base
############################
Sample: VB100
Date: 5/13/09
Purpose:
Same structure as VB98. Only increase Qw layers' thickness from 8nm to 10nm.
Expecting longer emission in PL
Ga tips are 150C hotter than the base
No DRS
Xray Data Exists?
WVASE Data ?
Reflectivity Data ?
PL Data Exist
############################
Sample: VB99
Date: 5/11/09
Purpose:
1. To add cladding In.52Al.48As on both side of structure
2. To add Al protecting layer during Al and In2 bulk temp. change In.553Ga.447 As
3. Decrease As BEP at QW layer, keep Sb BEP the same to increase Sb incorporation. As: 3e-6 torr, Sb:5.6e-8 Torr
2 pair In.48Ga.42Al.10As/In.6768Ga.3232AsSb SL
Ga tips are 150C hotter than the base
No DRS
Xray Data Exists?
WVASE Data ?
Reflectivity Data ?
PL Data Exist-no clear emission
############################
Sample: VB98
Date: 5/8/09
Purpose:
Use VB97 structure and flux but add Sb in QW layers InGaAs(Sb). First try of mixed group Vs, keep Sb flux at 5.6e-8 Torr, As flux in QW also decrease to 6e-6Torr .
3 pair In.48Ga.42Al.10As/In.6768Ga.3232AsSb SL
Ga tips are 150C hotter than the base
No DRS
Xray Data Exists?
WVASE Data ?
Reflectivity Data ?
PL Data Exist
############################
Sample: VB97
Date: 5/8/09
Purpose:
Grow lattice matched InGaAlAS with 1% strained InGaAs QWs . Expect to have longer PL emission from Qw since the barrier height for InGaAlAs is lower than InAlAs
3 pair In.48Ga.42Al.10As/In.6768Ga.3232As SL
Ga tips are 150C hotter than the base
No DRS
Xray Data Exists?
WVASE Data ?
Reflectivity Data ?
PL Data Exist
############################
Sample: VB96
Date: 5/6/09
Purpose:
From vb95 HRXRD fitting, In2 GR is around 3.666e-1 (um/hr), which is based on two data point estimatino ((0,0) and (4.77e-9,0.366)). From this we estimate higher In2 BEP to grow a lattice matched InAsAs/InGaAs on InP
3 pair InAlAs/InGaSb SL, total 2 QWs
Ga tips are 150C hotter than the base
No DRS
Xray Data Exists?
WVASE Data ?
Reflectivity Data ?
PL Data Exist
############################
Sample: VB95
Date: 5/1/09
Purpose:
This film is the third one with the same structure as VB93 VB94. In VB95 , In2 flux is increased to 4.7e-7, expect to be lattice matched to InP. As overpressure during InP oxide desorption is also changed from 1.1e-5 to 5.5e-6 to avoid (?) interfacial layer btw InP and InAlAs during oxide desorption.
3 pair InAlAs/InGaSb SL, total 2 QWs
Ga tips are 150C hotter than the base
No DRS
Xray Data Exists?
WVASE Data ?
Reflectivity Data ?
PL Data Exist
############################
Sample: VB94
Date: 4/29/09
Purpose:
Largely the same structureas VB93. Due to PL result, In2 content is more than expected. tTHis sample intend to decrease In2 BEP and try to grow more lattice matched layers. Other BEPs (Ga2,Al) remain the same.
Flux measurement has funny activation energy and intercepts for all group III cells . Maybe because the sampling temperature interval are too small? Al cell appear to be unusual as the flux goes up when decrease the cell base temperature.
3 pair InAlAs/InGaSb SL, total 2 QWs
Ga tips are 150C hotter than the base
No DRS
Xray Data Exists?
WVASE Data ?
Reflectivity Data ?
PL Data Exist
############################
Sample: VB93
Date: 4/27/09
Purpose:
Grow lattie matched In.52 Al.48As and In.53Ga.47As PL structure on InP as the starting point of .>2um laser active region
3 pair InAlAs/InGaSb SL, total 2 QWs
Ga tips are 150C hotter than the base
No DRS
Xray Data Exists?
WVASE Data ?
Reflectivity Data ?
PL Data Exist
############################
Sample: VA107
Date: 4/22/09
Purpose:
OAWG AWG Structure
Should be identical to VA68 and VB52
Only Cryo #1 used during the growth. Cryo #2 was cooling done from a regeneration
MOS structure with Al0.27Ga0.73As/Al0.17Ga0.83As dilute waveguide core
DRS exists using GaAsSi.mtl file
PL Exists
WVASE exits
Xray Rocking Curves exist
Reflectivity Data Exist
Ga tips are 150C hotter than the base; AL tip is 220 cooler than the base
############################
Sample: VB92
Date: 4/21/09
Purpose:
Calibrate the antimony incorporation limit in standard GaAs-based growth condition by using highest antimony flux ~9E-8
5 pair GaAs/GaAsSb SL
Ga tips are 150C hotter than the base
No DRS
Xray Data Exists
WVASE Data ?
Reflectivity Data ?
############################
Sample: VA106
Date: 4/14/09
Purpose:
InAsP QD Test Structure #2 for AFM
3 ML of InAs0.9P0.1 grown on In0.72GaAs0.6P
DRS Exists
PL Exixts
WVASE Exists
Xray Exists
Ga2 and In2 tips are 150C hotter than the base;
############################
Sample: VA105
Date: 4/14/09
Purpose:
InAsP QD Test Structure #1
3 ML of InAs0.9P0.1 grown on In0.72GaAs0.6P embedded in In0.72GaAs0.6P
capped with 100nm InP
DRS Exists
PL Exists
WVASE Exists
Xray Exists
Ga2 and In2 tips are 150C hotter than the base;
############################
Sample: VA104
Date: 3/25/09
Purpose:
InAs QD Test Structure #1
2 ML of InAs grown on In0.72GaAs embedded in In0.72GaAs0.6P
One DWELL layer and one QW layer of InGaAs
Overall like a two QW SCH structure; not doped
Sample Grown unsupervised by mistake
No DRS Too weak of a signal (P-type substrate?)
PL Exists
WVASE Exists
Xray Exists
Ga2 and In2 tips are 150C hotter than the base;
############################
Sample: VB91
Date: 3/24/09
Purpose:
Calibration of In1 and vrification of Ga1 and Al sources via a superlattices
7 pair GaAs/AlGaAs SL and a 3 pair GaAs/InGaAs SL
Ga and In tips are 150C hotter than the base; Al tip is 220C COLDER than the base.
First Run after repairing the cluster chamber crash from VB90
No DRS
WVASE Exists
Reflectivity Exists
############################
Sample: VB90
Date: 3/13/09
Purpose:
Calibration of In2 and vrification of Ga2 and Al sources via a superlattices
7 pair GaAs/AlGaAs SL and a 3 pair GaAs/InGaAs SL
Ga and In tips are 150C hotter than the base; Al tip is 220C COLDER than the base.
No DRS
Xray Data Exists
WVASE Data Exists
Reflectivity Data Exists
############################
Sample: VB89
Date: 3/11/09
Purpose:
Calibration of Ga1, Ga2 and Al sources via a 7 pair SL
Ga#1As/AlGa#2As SL
Some layers grown overnight unsupervised
Ga tips are 150C hotter than the base; Al tip is 220C COLDER than the base.
No DRS
Reflectivity Data Exists
WVASE Data Exists
Xray Data Exists
############################
Sample: VB88
Date: 3/11/09
Purpose:
Calibration of Ga1, Ga2 and Al sources via a 7 pair SL
Ga#1As/AlGa#2As SL
Substrate power supply overheated briefly during oxide desorption
Ga tips are 150C hotter than the base; Al tip is 220C COLDER than the base.
No DRS
Reflectivity Data Exits
WVASE Data Exists
Xray Data Exists
############################
Sample: VB87
Date: 3/11/09
Purpose:
Calibration of Ga1, Ga2 and Al sources via a 7 pair SL
Ga#1As/AlGa#2As SL
Ga tips are 150C hotter than the base; Al tip is 220C COLDER than the base.
FILM ABORTED: Power supply current limited too low to allow for the oxide to be desorbed
############################
Sample: VA103
Date: 2/25/09
Purpose:
InAs QD Test Structure #1
2 ML of InAs grown on In0.72GaAs embedded in In0.72GaAs0.6P
One DWELL layer and one QW layer of InGaAs
Overall like a two QW SCH structure; not doped
Sample Grown unsupervised by mistake
DRS Exists
PL Exists
Xray Data Exists
Ga2 and In2 tips are 150C hotter than the base;
############################
Sample: VA102
Date: 2/10/09
Purpose:
850nm SBR Structure with an oxidizable DBR
5.5 pair 132nm AlAs/61.4nm Al0.17GaAs initial DBR
SA section: 10nm Al0.17GaAs/25nm GaAs/30nm Al0.17GaAs/5nm GaAs/Air
Similar to VA97 850nm SBR with an all AlGaAs DBR
Al0.17GaAs grown with Ga1 and Al
Ga2 tip is 150C hotter than the base; Al tip is 240C colder than the base
############################
Sample: VA100
Date: 11/25/08
Purpose:
1550nm Laser Structure #2 with two quat layers
InGaAs QWs grown with In1 with BOTH Ga cells
1300 quat grown with In2 and Ga2
1130 quat grown with In1 and Ga1
with an etch stop in the upper InP cladding layer
p-type doping increase towards the surface
DRS Exists
In1, In2, Ga1 and Ga2 tips are 150C hotter than the base
############################
Sample: VB86
Date: 12/1/08
Purpose:
Growth of AlSb/GaSb on GaSb(100):Te with Ga2. Note: use GaSb from Semiconductor Wafer Inc. new batch purchased Oct.08
This is the first sample of a serie of experiment. Changing the antimony cell cracking zone temperature to see if Sb flux could be elevated under different conditions.
Oxide desorbtion temp ramp up to 600c,hold 1min .Growth substrate temperature at 530c. This is the growth condition came up from antimony sub group meeting (Oct.08)
Ga2 flux is 2.08E-7 Al flus is 32.089E-9
Antimony bulk temperature is at 740C. Cracking zone temperature hold at 900C
Sample lost: fell into reactor
Ga tip is 150C hotter than the base
############################
Sample: VA99
Date: 11/24/08
Purpose:
Implant Structure
Desired: 50nm InGaAs:Be/30nm InGaAsP:Be
InGaAs using In2 and Ga2; doped to 2E18
InGaAsP (lambda=1180nm) using In1 and Ga1; doped to 1E18
NO DRS: Monochromator not responding
WVASE Exits
PL Exists
Ga1and Ga2 tips are 150C hotter than the base; Al tip is 240C colder than the base
############################
Sample: VA98
Date: 11/19/08
Purpose:
850nm SBR Structure: Design 3
25.5 pair 64.95nm Al0.95GaAs/57.15nm Al0.17GaAs DBR
SA section: 10nm Al0.17GaAs/15nm GaAs/35nm Al0.17GaAs/ 5nm GaAs /Air
Al0.95GaAs grown with Ga1 and Al
Al0.17GaAs grown with Ga2 and Al
Ga1and Ga2 tips are 150C hotter than the base; Al tip is 240C colder than the base
############################
Sample: VA97
Date: 11/3/08
Purpose:
850nm SBR Structure: Design 3
25.5 pair 69.32nm Al0.95GaAs/61.42nm Al0.17GaAs DBR
SA section: 10nm Al0.17GaAs/25nm GaAs/30nm Al0.17GaAs/ 5nm GaAs /Air
Al0.95GaAs grown with Ga2 and Al
Al0.17GaAs grown with Ga1 and Al
Sample Grown unsupervised over nite
DRS Exists
Xray Exists
Ga1, Ga2 and In1 tips are 150C hotter than the base; Al tip is 240C colder than the base
############################
Sample: VA96
Date: 10/29/08
Purpose:
1550nm Laser Structure #1 with In1, Ga1 and Ga2
InGaAs QWs grown with In1 with BOTH Ga cells
WVASE Exists
PL Exists: Lambda=1682 on the 200uV Scale
DRS Exists
X-Ray Data Exists
In1, Ga1 and Ga2 tips are 150C hotter than the base
############################
Sample: VA95
Date: 10/28/08
Purpose:
AlGaAs/GaAs Double Asymmetric QW HeteroStructure for Kieth Nelson
10 periods of 10nm Al0.3GaAs/10nm GaAs/3nm AlGaAs/12nm GaAs/01nm AlGaAs
PL Exists: Lambda=857 on the 200uV scale
Reflectivity Data Exits but doesn't show much
WVASE Data Exists
Xray Data Exists
DRS Exists
Ga2 tip is 150C hotter than the base; Al tip is 240C cooler than the base
Si temperatures: 1100, 1130, 1160
Be Temperatures: 825, 850, 875, 900
DRS Exists
In1 tip is 150C hotter than the base
############################
Sample: VB85
Date: 9/17/08
Purpose:
Growth of GaAsSb/GaSb on GaSb(100):Te with Ga2. Note: use GaSb from Semiconductor Wafer Inc.
Oxide desorbtion temp ramp DOWN to 550c,hold 3min .Growth substrate temperature at 530c.Based on temperature spread sheet-Auger data, this temperature show lowest oxygen signal at the substrate/buffer interface so far. All the temperature ramping rate back to normal -20 degree per minute
Ga2 flux is 4.63E-7, similar to VB77. From As Sb spread sheet , fudge factor (under Tc=530) btw As and Sb is 1:3.5, thus this film expect 60% As incorporated.
Antimony bulk temperature is at 740C. In this temperatrue, valve position gets less control, thus go to 300 directly at 300c ramping up.
############################
Sample: VB84
Date: 9/13/08
Purpose:
No Film
############################
Sample: VB83
Date: 9/11/08
Purpose:
Check Ga2 and Al growth rate on Reactor B , calibrate Al, Ga2 with 7 pair SL
Ga#2As/AlGa#2As SL
Xray rocking curves exist
AES scans exist
Ga tips are 150C hotter than the base; Al tip is 220C COLDER than the base.
############################
Sample: VB82
Date: 9/16/08
Purpose:
Growth of GaAsSb/GaSb on GaSb(100):Te with Ga2. Note: use GaSb from Semiconductor Wafer Inc.
Oxide desorbtion temp ramp to 600c,hold 3min. Growth substrate temperature at 550c. Highest temp used so far on GaAsSb system.. All the temperature ramping rate decrease to 10degree per minute
Ga2 flux is 4.63E-7, similar to VB77. From As Sb spread sheet , fudge factor (under Tc=530) btw As and Sb is 1:3.5, thus this film expect 60% As incorporated.
Antimony bulk temperature is at 740C. In this temperatrue, valve position gets less control, thus go to 300 directly at 300c ramping up.
After Oxide desorption process , camera open and see non-specular surface. 600c is too high for Sb flux (4.5E-7) , ramp rate 10deg/min environment
Xray rocking curves exist
AFM images exist
Ga tip is 150C hotter than the base
############################
Sample: VB81
Date: 9/10/08
Purpose:
GaSb-based film. No trend growth data.
The film probably does not exist.
############################
Sample: VA93
Date: 9/8/08
Purpose:
OAWG AWG Structure
Should be identical to VA68 and VB52
MOS structure with Al0.27Ga0.73As/Al0.17Ga0.83As dilute waveguide core
Sample Grown overnight without supervision
DRS exists using GaAsSi.mtl file
PL Data Exists; Pk at 692nm on the 20uV scale
Xray Data Exists
WVASE Data Exists
Reflectivity Data Exists
Ga tips are 150C hotter than the base; AL tip is 220 cooler than the base
############################
Sample: VB80
Date: 9/5/08
Purpose:
Same structure and condition as VB78, VB79
6 pairs GaSb/AlGaSb Superlattice structure to make more obvious features on XRD
Wafer Technology Quarter wafer loaded. Without p-Si cover on quarter wafer mount to increase weight, likely that Dummy Si cover may decrease thermal couple reading substrate temperature
Use LM 350C 1 hr pre bake
Substrate temperature is Tc=530C for buffer layer, Tc=570C for Al-containing Ternary layer. Oxide desorption temperature To=580. These changes are due toVB79 sees only substrate peak in HRXRD and no peaks in PL. This growing is mostly movoing to higher temperature.
Ga1 bulk temperature to 974c inorder to have V/III ratio=1.6. Al content turn out to be 17.9881% (from Mathmatica file calculation, based on Auger result from VB68 adn VB70 Discrepency exist between 9/5/08 reactor 2 spread sheet, which shows 30.2547 ), strain problem would be counterbalanced by thicker GaSb layer(30nm) in superlattice structure
Cryo pump #2 is down
Sb bulk zone is 740C and flux correspondingly to 4.5Ee-7
BEP ratio V/III=1.6 for Ternary layer, 1.73 for GaSb layer
############################
Sample: VB79
Date: 9/4/08
Purpose:
Same structure and condition as VB78, due to wafer lost in reactor B on 9/2/08
6 pairs GaSb/AlGaSb Superlattice structure to make more obvious features on XRD
Wafer Technology Quarter wafer loaded. With p-Si cover on quarter wafer mount to increase weight
Use 350 fast bake recipe for Prep, which is not correct. 350C fast bake is for InP substrate.
Substrate temperature is Tc=530C for buffer layer, Tc=540C for Al-containing Ternary layer. Oxide desorption temperature To=570. These changes are due to 7/24/08 Auger analysis. Higher To (570c) lead to lower oxygen signal while approaching substrate/buffer interface. 530c for buffer layer is identical to VB55 (530c), 540c for AlGaSb is also close to VB55 (530c for GaAsSb). Increase the growth temperature and oxide desorption temperature is expected to have smoother surface.
Ga2 bulk temperature to 987c inorder to have at least V/III ratio=2. Al content turn out to be 18.2514% (from Mathmatica file calculation, error of 107.56% exist between 9/4/08 reactor 2 spread sheet and new calculation based on Auger result), strain problem would be counterbalanced by thicker GaSb layer(30nm) in superlattice structure
Cryo pump #2 is down
Sb bulk zone is 740C and flux correspondingly to 4.5Ee-7
BEP ratio V/III=2.00178 for Ternary layer, 2.21675 for GaSb layer
############################
Sample: VA92
Date: 9/3/08
Purpose:
InGaAsP Calibration (Desired Lambda=1130nm)
Desired Structure=InP buffer with 6 pairs of 50nm InGaAsP/50nm InP
Note: InP layers may contain ~0.5% As
26% Ga and 60% As in the InGaAsP
Ga1 and In1 tips are 150C hotter than the base
DRS Exists
PL Exists: emits at 1171 on the 20mV scale
WVASE Data Exists
############################
Sample: VA91
Date: 9/3/08
Purpose:
InGaAsP Calibration (Desired Lambda=1330nm)
Desired Structure=3210nm InP buffer with 6 pairs of 52nm InGaAsP/50nm InP
Note: InP layers may contain ~0.5% As
26% Ga and 60% As in the InGaAsP
Ga1 and In1 tips are 150C hotter than the base
DRS Exists
PL at 1352nm on the 20mV scale
WVASE exists
############################
Sample: VB78
Date: 9/2/08
Purpose:
6 pairs GaSb/AlGaSb Superlattice structure to make more obvious features on XRD
Wafer Technology Quarter wafer loaded. No p-Si cover on quarter wafer mount to increase weight
Substrate temperature is Tc=530C for buffer layer, Tc=540C for Al-containing Ternary layer. Oxide desorption temperature To=570. These changes are due to 7/24/08 Auger analysis. Higher To (570c) lead to lower oxygen signal while approaching substrate/buffer interface. 530c for buffer layer is identical to VB55 (530c), 540c for AlGaSb is also close to VB55 (530c for GaAsSb). Increase the growth temperature and oxide desorption temperature is expected to have smoother surface.
Ga2 bulk temperature to 990c inorder to have higher V/III ratio. Al content (calc all flux) turn out to be 20%, strain problem would be counterbalanced by thicker GaSb layer(30nm) in superlattice structure
Cryo pump #2 is down
Sb bulk zone is 740C and flux correspondingly to 4.5Ee-7
BEP ratio V/III=1.946 for Ternary layer, 2.153 for GaSb layer
DRS doesn't exists
Ga tips is 150C hotter than the base
############################
Sample: VA90
Date: 8/29/08
Purpose:
InGaAsP Calibration (Desired Lambda=1330nm)
Desired Structure=550nm InP buffer with 6 pairs of 50nm InGaAsP/50nm InP
Note: InP layers may contain ~0.5% As
26% Ga and 60% As in the InGaAsP
Ga2 and In2 tips are 150C hotter than the base
DRS Exists
PL Exists: emits at 1350 on the 20mV scale
WVASE Data Exists
Xray Data Exists
############################
Sample: VA89
Date: 8/21/08
Purpose:
1550nm SBR Structure: HMS 3
22 pair GaAs/Al0.95GaAs with a lambda/2 saturable absorber composed of AlGaAs/20nm InGaAs/GaAs
AlGaAs grown with Ga2 and Al
InGaAs grown with Ga1 and In1
Top AlGaAs layer grown with Ga1 and Al
Sample Grown unsupervised over night
DRS Exists
Reflectivity Data Exists
Xray Data Exists
Ga1, Ga2 and In1 tips are 150C hotter than the base; Al tip is 240C colder than the base
############################
Sample: VA88
Date: 8/19/08
Purpose:
1550nm SBR Structure: HMS 4
22 pair GaAs/Al0.95GaAs with a lambda/2 saturable absorber composed of AlGaAs/60nm InGaAs/GaAs with a 3 pair resonant overlayer
AlGaAs grown with Ga2 and Al
InGaAs grown with Ga1 and In1
The surface is AlGaAs grown with Al and Ga1
Sample Grown over night. (i.e. no one monitored the growth other than the initial few layers)
DRS Exists but very weak and noisy
No PL observed
X-ray Rocking curves exists
Reflectivity Data exists
Ga1, Ga2 and In1 tips are 150C hotter than the base; Al tip is 240C colder than the base
############################
Sample: VB77
Date: 8/8/08
Purpose:
Growth of GaAsSb/GaSb on GaSb(100):Te with Ga2. Note: First time using GaSb wafer from Wafer Technology.
Elongated oxide desorption holding time from 1 min to 3 min, idling at the temp of 550c. Reason for this is the antimony oxide will turn in to gallium oxide when temperature goes up and produce pure antimony. When temperature goes up , newly formed pure antimony will be removed thus facilitate the reaction going toward Ga2O3+Sb side. Increase the holding time might let the chemical reaction to equilibrate and facilitate the Ga2O3 to desorb during this period.
This sample could be seen as a conterpart of VB55, which share the same structure but with p-GaAs substrate. While in this growth I have higher Sb flux ( Sb valve position doesn't change flux, although I had observed the valve position changed both on the monitor and on the cell, see group V trend file for details), but the Sb/As ratio is kept as close as possible (Sb/As=17.62) and Ga2 flux changed to fit according V/III ratio
This sample has comparable Ga2 and Sb flux and 4x more As flux than Sb flux. Based on VB76, flux sensitivity factor between those two Vs is ~9.52, thus this film would expect 35%As incorporated. AES and XRD data will be collected.
Antimony bulk temperature is at 740C. In this temperatrue, valve position gets less control.
############################
Sample: VB76
Date: 8/6/08
Purpose:
Calibration of Sb via GaAsSb/GaSb on p-GaAs with Ga2
To collect second data point for As Sb flux sensitivity under growth temperature Tc=530
Ga2 flux (5.06E-7)is comparable to Sb(4.87E-7) flux . As flux is over pressure and bulk temp is adjusted to 370 to reach 1.37E-5 for GaAs buffer layer.
For Arsenic source, given the constraint on Sb flux, it's not possible to reach 1E-5(bulk temp=370) for GaAs buffer and have high valve sensitivity at low flux range(comparable to Sb flux).Thus the Sb rich GaAsSb could only be done on GaSb substrate.
(valve open 50mil) As calibration was done after (valve open 300mil) As calibration.
############################
Sample: VB75
Date: 8/5/08
Purpose:
Quarter wafer loaded. One p-Si cover on quarter wafer mount to increase weight
Substrate temperature is Tc=520C for buffer layer, Tc=540C for Al-containing Ternary layer. Oxide desorption temperature To=570. These changes are due to 7/24/08 Auger analysis. Higher To (570c) lead to lower oxygen signal while approaching substrate/buffer interface. 520c for buffer layer is close to VB55 (530c), 540c for AlGaSb is also close to VB55 (530c for GaAsSb). Increase the growth temperature and oxide desorption temperature is expected to have smotther surface.
Decrease Ga2 bulk temperature to 990c inorder to have higher V/III ratio. Al content (calc all flux) turn out to be 40%, may lead to highly strained or relaxed film
Cryo pump #2 is down
Sb bulk zone is raised to 750C and flux correspondingly to 5Ee-7
BEP ratio V/III=1.94 for Ternary layer, 2.24 to GaSb layer
Xray rocking curves exist
AES scans exist
AFM images exist
DRS doesn't exists
Ga tips is 150C hotter than the base
############################
Sample: VB74
Date: 7/22/08
Purpose:
Growth of GaAsSb/GaSb on n-GaSb with Ga2
To verify the oxide desorption carried our properly? Based on previous sample, an observation show that film with any material combination (Al, Ga, As,Sb) grew on GaSb substrate generate a single substrate peak in HRXRD. Possibility could be that all the film are amorphous. The cause for amorphous film could be 1)incomplete oxide desorption 2) Too low growth temperature
This sample could be seen as a conterpart of VB55, which share the same structure but with p-GaAs substrate. While in this growth I have higher Sb flux ( Sb valve position doesn't change flux, although I had observed the valve position changed both on the monitor and on the cell, see group V trend file for details), but the Sb/As ratio is kept as close as possible (Sb/As=17.62) and Ga2 flux changed to fit according V/III ratio
Arsenic bulk temperature is at 360C, valve fully open (300mil) gives 8.02E-6 Torr. Such that Sb/As ratio is not the same as VB55 (Sb/As~29)
Antimony bulk temperature is at 740C, and we observed a malfuntion of valve position vs. flux quatity. Another small calibration was carried out the next day for lower bulk zone temperature. See the Sb_Bulk_600c trend file
After the Sb_Bulk_600c calibration, valve position does work properly. The bulk temperature is too high at 740c and seriously decrease the valve sensitivity. On the other hand, Sb_Bulk_600c is able to change the flux by changing valve position in 50 valve increment test.
Xray Rocking Curves exist
AES scans exist
AFM images exist
Ga tip is 150C hotter than the base
############################
Sample: VB73
Date: 7/21/08
Purpose:
Grow lattice mismatch Ternary to make sure the incorporation of Al
Quarter wafer loaded. One p-Si cover on quarter wafer mount to increase weight
Substrate temperature is Tc=500C for buffer layer, Tc=450C for Ternary layer
Cryo pump #2 is down
Sb bulk zone is raised to 750C and flux correspondingly to 5Ee-7
BEP ratio V/III=1.23 for Ternary layer, 1.358 to GaSb layer
Xray Rocking curves exist
AES scans exist
DRS doesn't exists
Ga tips is 150C hotter than the base
############################
Sample: VA87
Date: 7/18/08
Purpose:
1550nm SBR Structure: HMS 2b
22 pair GaAs/Al0.95GaAs with a lambda/2 saturable absorber composed of AlGaAs/20nm InGaAs/GaAs
AlGaAs grown with Ga2 and Al
InGaAs grown with Ga1 and In1
DRS Exists
WVASE Exists
Xray Data Exists
Spectrophotometer Data Exists
Note there are multiple recipes associated with this growth. The original SA section
was changed during the growth of the DBR. Hence after the DBR, the original recipe
was aborted and a second recipe containing the SA section was started.
The GaAs layer of pair #16 is approximately 5nm thinner than desired due to the moving of the manual/remote controller.
Ga1, Ga2 and In1 tips are 150C hotter than the base; Al tip is 240C colder than the base
############################
Sample: VB72
Date: 7/17/08
Purpose:
Grow lattice mismatch Ternary to make sure the incorporation of Al
Quarter wafer loaded. One p-Si cover on quarter wafer mount to increase weight
Substrate temperature is Tc=500C for buffer layer, Tc=490C for Ternary layer
Cryo pump #2 is down
Sb bulk zone is raised to 750C and flux correspondingly to 5Ee-7
BEP ratio V/III=1.23 for Ternary layer, 1.358 to GaSb layer
############################
Sample: VA86
Date: 7/16/08
Purpose:
1550nm SBR Structure: HMS 1
22 pair GaAs/Al0.95GaAs with a lambda/2 saturable absorber with a 60 nm In0.53GaAs layer
AlGaAs grown with Ga2 and Al
InGaAs grown with Ga1 and In1
DRS Exists
Xray Data Exists
WVASE Exists
Spectrophotometer Data Exists
Ga1, Ga2 and In1 tips are 150C hotter than the base; Al tip is 240C colder than the base
############################
Sample: VB71
Date: 7/15/08
Purpose:
Grow lattice mismatch Ternary to make sure the incorporation of As
Quarter wafer loaded. One p-Si cover on quarter wafer mount to increase weight
Substrate temperature is Tc=500C for buffer layer, Tc=490C for Ternary layer
Cryo pump #2 is down
As valve doesn't open properly when goes from 0 to 20, thus boost the valve to 50 first (last for 10 sec) and than go back to 20 to make sure the valve is open. (see group V trend data)
Flux of As valve 20 is different from As valve 50->20 value due to a surge overpressure and one cryopump malfunction
Sb bulk zone is raised to 740C and flux correspondingly to 4.75Ee-7
BEP ratio V/III=2.6 for Ternary layer, 2 to GaSb layer
Xray Rocking curves exist
AES scans exist
DRS doesn't exists
Ga tips is 150C hotter than the base
############################
Sample: VB70
Date: 7/15/08
Purpose:
Grow lattice mismatch Ternary to make sure the incorporation of Al
Quarter wafer loaded. One p-Si cover on quarter wafer mount to increase weight
Substrate temperature is Tc=500C for buffer layer, Tc=490C for Ternary layer
Cryo pump #2 is down Base pressure increase to 2.15E-10 Torr
Ga tips is 150C hotter than the base; Al tip is 220 colder than the base
Sb bulk zone is raised to 740C and flux correspondingly to 4.75Ee-7
BEP ratio V/III=2.33 for Ternary layer, 2.487 to GaSb layer
############################
Sample: VA85
Date: 7/14/08
Purpose:
1550nm SBR Test Structure
10 pair GaAs/Al0.95GaAs with a lambda/2 saturable absorber with a 60 nm In0.53GaAs layer
AlGaAs grown with Ga2 and Al
InGaAs grown with Ga1 and In1
Ga1, Ga2 and In1 tips are 150C hotter than the base; Al tip is 240C colder than the base
DRS Exits
############################
Sample: VB69
Date: 7/10/08
Purpose:
Calibration of Sb via GaSb/AlGaAsSb 7 pair superlattice with Ga1
III/V=2.52, aim for Al0.3Ga0.7As0.02Sb0.98
Sb flux still oscillating but similar average value from previous Sb-containing sample (start from VB65 Sb bulk zone temperature raised to 740)
Cryo pump #2 shut down due to over temperature base pressure=8.69E-11 Torr
As valve doesn’t' open properly when goes from 0 tp 20. (see Group V trend file) Recipe embed a valve step (0->50->20) to ensure As valve open to 20
Xray rocking curves exist
AES scans exist
DRS doesn't exists
Ga tips is 150C hotter than the base;
Al tip is 220C cooler than the base
############################
Sample: VA84
Date: 7/9/08
Purpose:
InGaAsP Calibration (Desired Lambda=1330nm)
Desired Structure=300nm InP/ 50nm InGaAsP/50nm InP/50nm InGaAsP/50nm InP
Note: InP layers may contain ~0.5% As
26% Ga and 60% As in the InGaAsP
Ga2 and In2 tips are 150C hotter than the base
DRS Not operational
############################
Sample: VA83
Date: 7/9/08
Purpose:
InGaAsP Calibration (Desired Lambda=1180nm)
Desired Structure=300nm InP/ 50nm InGaAsP/50nm InP/50nm InGaAsP/50nm InP
Note: InP layers may contain ~0.5% As
20% Ga and 45% As in the InGaAsP
Ga2 and In2 tips are 150C hotter than the base
DRS Not operational
Xray Data Exists
WVASE Data Exits
############################
Sample: VB68
Date: 7/7/08
Purpose:
Calibration of Sb via AlGaAsSb on GaSb with Ga1
Target the quaternary layer growth temperature window and Group V sensitivity
Desired Structure=AlGaAsSb/GaSb/AlGaAsSb with Al at 25% As=2%
First quarter wafer loaded. One p-Si cover on quarter wafer mount to increase weight
Substrate temperature is Tc=500C for buffer layer, Tc=490C for quaternary layer
Cryo pump #2 is down Base pressure increase to 2.15E-10 Torr
Ga tips is 150C hotter than the base; Al tip is 220 colder than the base
Sb bulk zone is raised to 740C and flux correspondingly to 5Ee-7
BEP ratio V/III=2.5 for quaternary layer, 2.17 to GaSb layer
############################
Sample: VA82
Date: 7/2/08
Purpose:
InGaAs:Be Calibration and Ohmic Contact test layer
Desired Structure=500nm InP/ 150nm InGaAs:Be
Note undoped buffer layer that may contain ~0.5% As
T_Be=875 as opposed to T_Be=825 on VA80 and T_Be=850 on VA81
Ga1 and In1 tips are 150C hotter than the base
DRS Not operational
############################
Sample: VB67
Date: 7/1/08
Purpose:
Calibration of Sb via GaSb with Ga2
Aiming for optimal oside desorption temperature. III/V=2.4
Grow thin (~70nm) buffer layer to tell degree of oxide desorption by buffer surface morphology.
May do regrowth if good surface morphology is observed.
Sb flux still oscillating but similar average value compared with VB65obtained (grew in the same day)
Ga2 flux had two off point at temperature 975~980, eliminated from Regression /activation energy calculation
DRS doesn't exists
Ga tips is 150C hotter than the base;
############################
Sample: VB66
Date: 6/26/08
Purpose:
Calibration of Sb via GaSb with Ga1
Grow thick (~1000nm) buffer layer to get HRXRD confirmation on crystallization quality.
This is a regrowth sample from VB64 due to good surface morphology (pit still exist but very low in density and small in radius)
This sample was SEMed before the regrowth
############################
Sample: VB65
Date: 7/1/08
Purpose:
Calibration of Sb via GaSb with Ga2
Aiming for optimal oside desorption temperature. III/V=2.4
Grow thin (~70nm) buffer layer to tell degree of oxide desorption by buffer surface morphology.
This sample along with VB66_VB64 and VB67 share the same V/III ratio and same Sb bulk zone temperature (740c)
Sb flux still shaky at Tc,sb=740c. Periodical fluctuation still observed but with less distinct period feature. Sb flux is lower than the previous measurement (VB66_VB64) by 0.85E-7
Ga2 flux is also shaky compared to Ga1
############################
Sample: VB64
Date: 6/25/08
Purpose:
Calibration of Sb via GaSb with Ga1
Used as a substrate for VB66
Aiming for optimal oxide desorption temperature(Tc,ox=550C). V/III=2.4
Grow thin (~70nm) buffer layer to tell degree of oxide desorption by buffer surface morphology. But with higher GR and V/III flux.
If surface morphology gets better might do regrowth on this wafer to get HRXRD data.
DRS doesn't exists
Ga tips is 150C hotter than the base;
############################
Sample: VB63
Date: 6/23/08
Purpose:
Calibration of Sb via GaSb with Ga1
Aiming for optimal oside desorption temperature. III/V=1 for comparison with previous samples (optimal ratio is around 2.4, from Lit.)
Grow thin (~70nm) buffer layer to tell degree of oxide desorption by buffer surface morphology. Desorption temp too high would cause Ga droplet on substrate and buffer layer inherit the drop morphology as well as generating pits to release strain
############################
Sample: VA81
Date: 6/13/08
Purpose:
InGaAs:Be Calibration and Ohmic Contact test layer
Desired Structure=500nm InP/ 150nm InGaAs:Be
Note undoped buffer layer that may contain ~0.5% As
T_Be=850 as opposed to T_Be=825 on VA80
Ga and In tips are 150C hotter than the base
DRS died during growth
############################
Sample: VA79
Date: 6/11/08
Purpose:
Calibration of In2 and Ga2 sources via InGaP
Verification of VA77 Flux calibration
Structure=InGaP/GaAs/InGaP each 60nm thick
Ga and In tips are 150C hotter than the base
Only low Temp DRS scans exist. The p-type Zn doped GaAs wafer are too absorbing; transmitted light signal is weak
Xray Rocking Curves Exist
############################
Sample: VB62
Date: 6/11/08
Purpose:
Calibration of Sb via AlGaAsSb on GaSb with Ga1 and Ga2.
Target the quaternary layer growth temperature window and Group V sensitivity
Desired Structure=AlGaAsSb/GaSb/AlGaAsSb with Al at 25% As=2%
Substrate temperature is Tc=530C for buffer layer, Tc=540C for quaternary layer
Sb bulk zone is raised to 640C and flux correspondingly to 1.18Ee-7
Ga tips is 150C hotter than the base; Al tip is 220 colder than the base
############################
Sample: VB61
Date: 6/10/08
Purpose:
Calibration of Sb via AlGaAsSb on GaSb with Ga1 and Ga2.
Desired Structure=AlGaAsSb/GaSb/AlGaAsSb with Al at 25% As=2%
Substrate temperature is Tc=530C for buffer layer, Tc=500C for quaternary layer
Sb bulk zone is raised at 630C
############################
Sample: VA77
Date: 5/16/08
Purpose:
Calibration of In2 and Ga2 sources via InGaP
Ga and In tips are 150C hotter than the base
DRS doesn't exists. First film using p-type Zn doped GaAs wafer. Substrate too absorbing, transmitting light signal weak
############################
Sample: VA76
Date: 5/9/08
Purpose:
Calibration of In1 and Ga1 sources via InGaP
Ga and In tips are 150C hotter than the base
DRS exists
RGA scan exists
############################
Sample: VB54
Date: 5/7/08
Purpose:
Calibration of Sb via GaAsSb/GaSb on GaAs
DRS exists
SEM Images Exists
AES Scans Exists
Ga tip is 150C hotter than the base
############################
Sample: VB53
Date: 5/6/08
Purpose:
Calibration of Sb via AlGaAsSb on GaSb
surface not specular. Ga puddles observed under optical microscope
DRS doesn't exists
Xray Data Exists
SEM Data Exists
AES Data Exists
Ga tips is 150C hotter than the base; Al tip is 220 colder than the base
############################
Sample: VA75
Date: 4/29/08
Purpose:
Calibration of Ga1, Ga2 and Al sources via a 7 pair SL
Ga#1As/AlGa#2As SL
Ga tips are 150C hotter than the base; Al tip is 250C COLDER than the base.
DRS exists
RGA scan exists
############################
Sample: VA74
Date: 4/29/08
Purpose:
Calibration of Ga1, Ga2 and Al sources via a 7 pair SL
Ga#1As/AlGa#2As SL
This is the first run after outgassing
Ga tips are 150C hotter than the base; Al tip is 250C COLDER than the base.
DRS exists
RGA scan exists
############################
Sample: VB52
Date: 4/8/08
Purpose:
OAWG AWG Structure
Should be identical to VA68
MOS structure with Al0.27Ga0.73As/Al0.17Ga0.83As dilute waveguide core
DRS exists using GaAsSi.mtl file
WVASE Data Exists
PL exists
Xray Rocking Curves exist
Ga tips are 150C hotter than the base; AL tip is 220 cooler than the base
############################
Sample: VB51
Date: 4/4/08
Purpose:
PL structure (InGaAs with SCH) with underlying Al0.27Ga0.73As/GaAs Stack
Using Ga2 and In2
DRS exists using GaAsSi.mtl file
PL at 936 and 872 on the 1mV scale
Xray Rocking Curve Exists
WVASE Data Exists
In and Ga tips are 150C hotter than the base; AL tip is 220 cooler than the base
############################
Sample: VB50
Date: 4/1/08
Purpose:
PL structure (InGaAs with SCH) with underlying Al0.3Ga0.7As/GaAs Stack
In2 and Ga 2 used
DRS exists using GaAsSi.mtl file
PL at 872 and 889nm on the 1mV scale
Xray Rocking Curve Exists
WVASE Data Exisits
In and Ga tips are 150C hotter than the base; AL tip is 220 cooler than the base
############################
Sample: VB49
Date: 3/26/08
Purpose:
Calibration of In2 and Ga2 via InGaP
should be ~200nm of InGaP
DRS exists using GaAsSi.mtl file
Xray Rocking Curve Exist on Bruker and Panalytic Systems
AES Data Exists
Sample baked twice in the prep module due to cluster cryo pump problems
In and Ga tips are 150C hotter than the base;
############################
Sample: VB48
Date: 3/19/08
Purpose:
Calibration of In1 and Ga1 via InGaP
DRS exists using GaAsSi.mtl file
PL scans exist; only weak GaAs observed
Xray Rocking Curves Exist
XPS Data Exists
AES Data Exists
TEM Data Exists
SEM Data Exisits
In and Ga tips are 150C hotter than the base;
############################
Sample: VB47
Date: 3/13/08
Purpose:
Calibration of Ga1, Ga2 and Al sources via a 9 pair SL
Ga#1As/AlGa#2As SL with Al0.26Ga0.74As
Ga tips are 150C hotter than the base; Al tip is 220C COLDER than the base.
DRS exists at the end and wafer loading;
PL scans exist; only weak GaAs observed
Xray data exists
############################
Sample: VB46
Date: 3/6/08
Purpose:
First Film after MBE repairs
Calibration of Ga1, Ga2 and Al sources via a 6 pair SL
Ga#1As/AlGa#2As SL
Ga tips are 150C hotter than the base; Al tip is 220C COLDER than the base.
DRS Exists
WVASE Exists
Reflectivity Exists
Xray Data Exists
############################
Sample: VA73
Date: 11/12/07
Purpose:
To grow a 7 pair GaAs/AlAs DBR to check the Ga2 flux
Ga2 cell basically emptied during the growth of the DBR
DRS Exists ( No stop band observed in the DRS spectrum)
PL Exists; Peaks at 689, 721, 873, 768 in decreasing intensities
(quantum wells grown as opposed to lambda/4 layers)
WVASE Exists
############################
Sample: VA72
Date: 11/12/07
Purpose:
1150nm QW Test with Innolume;
Ga flux dropping during flux measurements
Contains both InGaAs QW and InGaAsN QW grown at T DRS~400C
Substrate ramp at 20C/min
PL pks at 1165nm and 1339nm (InGaAs and InGaAsN respectively)
DRS Exists
WVASE Exists
############################
Sample: VA71
Date: 11/6/07
Purpose:
1150nm QW Calibration run for Innolume, Germany
Film Grown immediately after VA70; same cell temps as VA70 except that 0.5sccm of N2 was introduced into the reactor during the growth of the QW and 1 min prior to QW.
Structure by Innolume: GaAs substrate/Al0.35GaAs/GaAs/InGaAs/GaAs at QW Tsub/ GaAs at normal Tsub/ AlGaAs/ GaAs
Similar to VA60, VA61, VA62, VA63, VA66, VA69, VA70
InGaAs QW grown a low Ts; T_DRS=407C
DRS exists
PL=1151 (still weaker than VA62; about 33%;0.7 vs 2.2)
N2 lines baked and leak checked
############################
Sample: VA70
Date: 11/6/07
Purpose:
1150nm QW Calibration run for Innolume, Germany
Testing if the reactor has recovered from the introduction of N2 (and the unintential water vapor) The system sat idle for ~1 month just pumping
Structure by Innolume: GaAs substrate/Al0.35GaAs/GaAs/InGaAs/GaAs at QW Tsub/ GaAs at normal Tsub/ AlGaAs/ GaAs
Similar to VA60, VA61, VA62, VA63, VA66, VA69
InGaAs QW grown a low Ts; T_DRS=407C
DRS exists
PL=1146 (still weaker than VA62; about 55%; 1.2 vs 2.2)
############################
Sample: VA69
Date: 10/5/07
Purpose:
1150nm QW Calibration run with Innolume, Germany
Grown to see if the had recovered from the introduction of N2 (plus unintentional residue water vapor)
Structure by Innolume: GaAs substrate/Al0.35GaAs/GaAs/InGaAs/GaAs at QW Tsub/ GaAs at normal Tsub/ AlGaAs/ GaAs
Similar to VA60, VA61, VA62, VA63, VA66
InGaAs QW grown a low Ts; T_DRS=403C
DRS exists
PL=1143 (still weak; weaker than VA62)
############################
Sample: VA68
Date: 10/4/07
Purpose:
All AlGaAs OAWG structure for an AWG structure
Waveguides confined vertically with AlAs (to be oxidized) layers
Dilute waveguide core composed of four Al0.27GaAslayers embedded in Al0.17GaAs
Al cell ramped; Ga2 Cell fixed
PL at 690nm
DRS exists
WVASE data exists
############################
Sample: VA67
Date: 10/3/07
Purpose:
To grow GaAsN at Tsub =510C (DRS); Sample grown with Innolume Inc.
Structure GaAs/GaAsN/GaAs
Second time with N2 Plasma Cell
N2=0.5sccm, 100W
Weak PL
DRS exisits
Xray from Innolume => N content ~1.85%
############################
Sample: VA66
Date: 10/3/07
Purpose:
1150nm QW Calibration run with Innolume, Germany
Structure by Innolume: GaAs substrate/Al0.35GaAs/GaAs/InGaAs/GaAs at QW Tsub/ GaAs at normal Tsub/ AlGaAs/ GaAs
Similar to VA60, VA61, VA62, and VA63
Cell temperatures from VA64
InGaAs QW grown a low Ts; T_DRS=399C
DRS exists; WVASE exists
PL=1131
############################
Sample: VA65
Date: 10/3/07
Purpose:
1150nm QW System Verification with Innolume, Germany
Structure by Innolume: GaAs substrate/Al0.35GaAs/GaAs/InGaAs/GaAs at QW Tsub/ GaAs at normal Tsub/ AlGaAs/ GaAs
Similar to VA60, VA61, VA62 and VA64
RUN FAILED: Wrong Tsub ramp rate used; 10C/min as opposed to 20C/min
Oxide not removed
No Nitrogen
DRS exists
############################
Sample: VA64
Date: 10/2/07
Purpose:
To grow GaAsN at Tsub =497C (DRS); Sample grown with Innolume Inc.
Structure GaAs/GaAsN/GaAs
First time with N2 Plasma Cell
N2=0.8sccm, 135W
No PL
DRS exisits
############################
Sample: VA63
Date: 10/2/07
Purpose:
1150nm QW Calibration run with 1sccm of N2 with Innolume, Germany
Structure by Innolume: GaAs substrate/Al0.35GaAs/GaAs/InGaAs/GaAs at QW Tsub/ GaAs at normal Tsub/ AlGaAs/ GaAs
Similar to VA60, VA61and VA62
Grown immediately after VA61 (sources not lowered to idle between runs)
InGaAs QW grown a low Ts; T_DRS=400C
DRS exists
PL=1140
############################
Sample: VA62
Date: 8/15/07
Purpose:
1150nm QW Calibration run for Innolume, Germany
Structure by Innolume: GaAs substrate/Al0.35GaAs/GaAs/InGaAs/GaAs at QW Tsub/ GaAs at normal Tsub/ AlGaAs/ GaAs
Similar to VA60 and VA61
Grown immediately after VA61 (sources not lowered to idle between runs)
InGaAs QW grown a low Ts; T_DRS=418C
DRS exists
PL=1158 (very strong)
############################
Sample: VA61
Date: 8/15/07
Purpose:
1150nm QW Calibration run for Innolume, Germany
Structure by Innolume: GaAs substrate/Al0.35GaAs/GaAs/InGaAs/GaAs at QW Tsub/ GaAs at normal Tsub/ AlGaAs/ GaAs
Similar to VA60
InGaAs QW grown a low Ts; T_DRS=410C
DRS exists
PL=1118 (very strong)
############################
Sample: VA60
Date: 8/14/07
Purpose:
1150nm QW Calibration run for Innolume, Germany
Structure by Innolume: GaAs substrate/Al0.35GaAs/GaAs/InGaAs/GaAs at QW Tsub/ GaAs at normal Tsub/ AlGaAs/ GaAs
InGaAs QW grown a low Ts; T_DRS=439C
DRS exists
PL=1065 (very strong)
############################
Sample: VA59
Date: 8/10/07
Purpose:
1150nm QW Calibration run for Innolume, Germany
Structure by Innolume: GaAs substrate/Al0.35GaAs/GaAs/InGaAs/GaAs at QW Tsub/ GaAs at normal Tsub/ AlGaAs/ GaAs
PROBLEM: as opposed to a 6.3nm In0.35GaAs QW, InAs QDs were grown
############################
Sample: VA51
Date: 3/9/07
Purpose:
OAWG Modulator Structure #2
Arsenide Based with Dilute Waveguide
DRS Exists
Repeat of VA24, VA49 and VA50 with VA25 fluxes
############################
Sample: VA50
Date: 1/1/07
Purpose:
OAWG arsenide based modulator.
Repeat of VA25 and VA49
4 25nm thick InGaP layers embedded in 750nm thick Al0.8Ga0.2As layer
DRS spectrum exists
PL: peak at 660nm
Al tip is only 30 deg cooler than the base
############################
Sample: VA49
Date: 12/15/06
Purpose:
OAWG arsenide based modulator.
Repeat of VA25
4 25nm thick InGaP layers embedded in 750nm thick Al0.8Ga0.2As layer
DRS spectrum exists at the beginning and at the end
PL exists: a peak at 960nm (cause unknown at this time 12/06)
Al tip is only 30 deg cooler than the base
############################
Sample: VA48
Date: 12/8/06
Purpose:
1550nm SBR; GaAs cladding layers with 2 InGaAs quantum wells
Mirror consists of 4.25 pair Al0.95GaAs/GaAs DBR from VA48 on 20.75pair Al0.95GaAs/GaAs DBR from VA42. This sample was from the outer ring when VA42 was grown (mirror 5 of 5)
This is a comparison to VA47 (just with a change in the cladding layer ideally)
Reflectivity spectrum exists
DRS spectrum exists before and after growth
PL exists (no emission at ~1580nm)
WVASE exists of the structure including just of VA42 only
Al tip is only 30 deg cooler than the base
############################
Sample: VA47
Date: 11/24/06
Purpose:
1550nm SBR; InP cladding layers with 2 InGaAs quantum wells
Mirror consists of 4.25 pair Al0.95GaAs/GaAs DBR from VA47 on 20.75pair Al0.95GaAs/GaAs DBR from VA42. This sample was from the inner ring when VA42 was grown (mirror 4 of 5)
Reflectivity spectrum exists
DRS spectrum exists; however does not include the complete stop band
PL exists; weak PL at ~1580
WVASE exists of the structure including just of VA42 only
Sample grown immediately after VA46 except that the growth times slightly adjusted from the flux measurements between VA46 and VA47
Al tip is only 30 deg cooler than the base
############################
Sample: VA46
Date: 11/24/06
Purpose:
1550nm SBR; InP cladding layers with 1 InGaAs quantum well
Mirror consists of 4.25 pair Al0.95GaAs/GaAs DBR from VA46 on 20.75pair Al0.95GaAs/GaAs DBR from VA42. This sample was from the inner ring when VA42 was grown (mirror 3 of 5)
Reflectivity spectrum exists
DRS spectrum exists; however does not include the complete stop band
PL exists; weak PL at ~1580
############################
Sample: VA45
Date: 11/18/06
Purpose:
1550nm SBR; GaAs cladding layers with 2 InGaAs quantum wells
Mirror consists of 4.25 pair Al0.95GaAs/GaAs DBR from VA45 on 20.75pair Al0.95GaAs/GaAs DBR from VA42. This sample was from the inner ring when VA42 was grown (mirror 2 of 5)
Reflectivity spectrum exists; 1550 is at the very edge of the stop band
PL exists; basically, no PL at 1580nm
WVASE exists
The film started at 7:00am after an automatic sample transfer. Growth times were set from VA42.
############################
Sample: VA44
Date: 11/18/06
Purpose:
1550nm SBR; GaAs cladding layers with 1 InGaAs quantum well
Mirror consists of 4.25 pair Al0.95GaAs/GaAs DBR from VA44 on 20.75pair Al0.95GaAs/GaAs DBR from VA42. This sample was from the inner ring when VA42 was grown (mirror 1 of 5)
Reflectivity spectrum exists; 1550 is at the very edge of the stop band
PL exists; basically, no PL at 1580nm
WVASE exists
The film started at 2:00am. Growth times were set from VA42 although the fluxes were measured prior to this film (fluxes were slightly lower).
############################
Sample: VA43
Date: 11/17/06
Purpose:
20.75pair Al0.95GaAs/GaAs DBR; Ended on a lambda/8 GaAs layer
4 mirrors grown
Reflectivity spectrum exists; Mirror centered at ~1440nm as opposed to ~1550nm
WVASE exists
The film started at 2pm. Growth times were set from VA42 although the fluxes were measured prior to this film (fluxes were slightly lower).
############################
Sample: VA42
Date: 11/16/06
Purpose:
20.75pair Al0.95GaAs/GaAs DBR; Ended on a lambda/8 GaAs layer
5 mirrors grown
Reflectivity spectra do not exist; as all of these samples were re-grown (VA44-VA48).
WVASE exists on wafer #28 (inner row) and on wafer #29 (outer row)
The film started at 7:30pm. Growth times were set from reflectivity measurement of VA41. The times were increased, but the fluxes just prior to growth were not verified.
############################
Sample: VA41
Date: 11/16/06
Purpose:
3pair Al0.95GaAs/GaAs DBR; Calibration run for the 1550nm DBRs
Reflectivity spectra exists.
WVASE exists
The film started at 12:30pm. Growth times were set from reflectivity measurement of VA41. The times were increased, but the fluxes just prior to growth were not verified.
This was grown after the cluster cryo pump was decontaminated for the first time
############################
Sample: VA40
Date: 11/9/06
Purpose:
1580 nm QW calibration Run #3
for the 1550nm SBRs
DRS exists
WVASE exists
PL at 1593nm
Approx 100nm of InP on an 8nm quantum well
############################
Sample: VA39
Date: 11/8/06
Purpose:
1580 nm QW calibration Run #2
for the 1550nm SBRs
DRS exists
WVASE exists
PL at 1515nm
Approx 100nm of InP on an 8nm quantum well
############################
Sample: VA38
Date: 11/7/06
Purpose:
1580 nm QW calibration Run #1
for the 1550nm SBRs
DRS exists
WVASE exists
PL at 1460nm
Approx 100nm of InP on an 8nm quantum well
############################
Sample: VA37
Date: 10/18/06
Purpose:
Laser structure suitable for the nanocavity photonic crystal laser or a ridge waveguide laser. (2 wafers)
Contains 4 quantum dot layers in 8nm InGaAs (In=0.15) quantum well that were separated with normal temperature 35nm thick GaAs barriers (5 nm were doped with Be).
The lower waveguide consisted of a silicon doped digital alloy of InGaP (19nm)/GaAs(1nm) (20 pairs).
Growth times were set from the flux measurements of VA36
Film grown automatically starting at 6pm and ran overnite
PL exists; 1249nm emission on the 10uV scale
############################
Sample: VA36
Date: 10/18/06
Purpose:
Laser structure suitable for the nanocavity photonic crystal laser or a ridge waveguide laser. (2 wafers)
Repeat of VA34 except that the AlAs and GaAs buffer layers were doped with Si
Contains two 8nm InGaAs (In=15%) quantum wells that were separated with 15nm of GaAs.
The lower waveguide consisted of a silicon doped InGaP
PL exists; 958nm emission on the 10mV scale
############################
Sample: VA35
Date: 10/5/06
Purpose:
Laser structure suitable for the nanocavity photonic crystal laser. (2 wafers)
Similar to VA28
Contains 2 quantum dot layers in 8nm InGaAs (In=0.15) quantum well that were separated with normal temperature 35nm thick GaAs barriers (5 nm were doped with Be).
The lower waveguide consisted of a silicon doped InGaP (400nm).
Growth times were set from the flux measurements of VA34
Film grown automatically starting at 12:50am and ran overnite
PL exists; 1250 on the 100uV scale
############################
Sample: VA34
Date: 10/4/06
Purpose:
Laser structure suitable for the nanocavity photonic crystal laser or a ridge waveguide laser. (2 wafers)
Note the AlAs and GaAs buffer layers are undoped; Devices will require front side contacts
Contains two 8nm InGaAs (In=15%) quantum wells that were separated with 15nm of GaAs.
The lower waveguide consisted of a silicon doped InGaP
PL exists; 960nm emission on the 20mV scale
############################
Sample: VA33
Date: 9/5/06
Purpose:
1064nm SBR for Q-Peak
Total of 8 InGaAs/GaAs quantum wells; 4 QWs in each of the two Lambda/2 saturable absorber sections. (each lambda/2 section is designed to be indentical to the saturable absorber section of VA32)
30 pairs of Al0.95GaAs/GaAs for the bottom DBR
1.5 pair (GaAs/AlGaAs/GaAs) DBR above the two Lambda/2 saturable absorber sections
Reflectivty exists (strong reflectivity dip due to the InGaAs absorption)
PL = two peaks ~1060 and ~1050 (possibly due to strain relaxation)
WVASE exits
DRS exists
############################
Sample: VA32
Date: 8/28/06
Purpose:
1064nm SBR for Q-Peak
25 pair Al0.95GaAs/GaAs bottom DBR
4 InGaAs/GaAs QW structure embedded in a lambda/2 GaAs saturable absorber section
Reflectivity Data exists in the Misc Data file section
PL at 1062nm at the 1mV Lock-In scale
DRS exists
WVASE exists; fairly good simulation
############################
Sample: VA31
Date: 8/18/06
Purpose:
Four InGaAs/GaAs QW Structure
1064nm Calibration run for the Q-Peak SBRs
Grown immediately after VA30 (i.e. the same day)
PL=1064nm at 100uV Lock-In scale
DRS exists
############################
Sample: VA30
Date: 8/18/06
Purpose:
Single 1064nm QW calibration run for the Q-Peak SBR program
InGaAs/GaAs structure
PL=1064nm at 10uV Lock-In scale
DRS exists
############################
Sample: VA29
Date: 7/7/06
Purpose:
OAWG Modulator based on MOS structure Design 2
Basically are Repeat of VA26 except with an InAlP etch stop immediately after the oxidizable AlAs layer
Waveguide core= 4 InGaP layers embedded in Al.8Ga.2As
Lower Output waveguide: InGaP embedded in InAlP (doped n type)
Upper waveguide: AlGaAs based
InAs Quantum dots in an InGaAs well with GaAs barriers (repeated twice)
Everything resides on AlAs
Two wafers grown
DRS exists
PL exists
############################
Sample: VA27
Date: 7/3/06
Purpose:
2um of 3E16 Si Doped GaAs on 2um of undoped Al.4Ga.6As
For Prof. Orlando's Group
DRS exists
Doping determined from the previous SIMS measurements
First time Platen 1003 was used (was the original Reactor A shutter)
############################
Sample: VA26
Date: 6/28/06
Purpose:
OAWG Modulator based on a MOS design
4 InGaP QW embedded in Al.8Ga.2As
with two oxidizable AlAs layers surrounding the waveguide core
Temperatures from Reactor B
############################
Sample: VA14
Date: 11/21/05
Purpose:
InGaP/AlAs Mirror Stack (6 pairs) suitable for oxidation;
In2 and Ga2 used; Used for Al cell calibration
Column V switch: 3 sec hold with As and P followed by a 15 sec stabilization
Temperatures from Reactor B
PL at 659nm
Essentially Lattice Matched
Xray: 94.6nm InGa0.468P / 98.1nm AlAs
############################
Sample: VA13
Date: 11/15/05
Purpose:
Al Cell Calibration via an AlGaAs / InGaP Structure using In2 and Ga2
No DRS on Reactor; Substrate temps based from Reactor B
Simulataneous/Abrupt change in As and P fluxes with a 15 sec hold with As prior to AlGaAs and 15 sec hold with P prior to InGaP
PL: InGaP=657.7nm
InGaP is for all practical purposes latticed matched to GaAs (<200"away)
The wafer was load when VA6 was removed from the system
############################
Sample: VB44
Date: 8/29/05
Purpose:
InAsP Quantum Dot Laser
3 3ML layers of InAs dots on InGa0.25As symmetrically placed within 120nm of InGaAsP (PL=1292nm) placed with 60nm claddings of InGaAsP (desired PL=1120nm);
Core Grown at TC=470C
DRS exists; ver 2.0 with InPS.mtl material file; T_DRS=467C and 389C
(the evolution of the spectrum exists in a *.ppt file)
Xray:
PL at 1355nm (possible from the 50nm InGaAsP etch stop layer)
(weaker than VB42 and VB43)
Doping graded next to the core
############################
Sample: VB43
Date: 8/25/05
Purpose:
InAsP Quantum Dash Laser (very similar to VB42)
3 4ML layers of dashes symmetrically placed within 120nm of InGaAsP (PL=1291nm) placed with 60nm claddings of InGaAsP (desired PL=1120nm)
DRS exists; ver 2.0 with InPS.mtl material file; T_DRS=467C
Xray:
Strong PL at 1291nm (possible from the 50nm InGaAsP etch stop layer)
Doping graded next to the core
############################
Sample: VB42
Date: 8/23/05
Purpose:
InAsP Quantum Dash Laser
2 4ML layers of dashes symmetrically placed within 120nm of InGaAsP (PL=1292nm) placed with 50nm claddings of InGaAsP (desired PL=1120nm)
DRS exists; ver 2.0 with InPS.mtl material file; T_DRS=467C
Xray: multiple sharp peaks centered around -300"
Strong PL at 1292nm (possible from the 50nm InGaAsP etch stop layer)
Doping graded next to the core
############################
Sample: VB41
Date: 6/27/05
Purpose:
4 ML of InAs0.9P Quantum Dashes embedded in InGaAsP clad with InP
Structure identical to VB40 except this is grown at a higher substrate temperature (+40C by the Tc and ~35C by the DRS)
For pump probe experiments
DRS exists: ver 2 with InPFe2.mtl material file. scaning 900-1250nm at 75nm/min. DRS Spectrum file exists
Weak PL: Quat peak ~1365nm. basically no InAsP peak
Xray: peaks to the right of the substrate peak: Insufficient As?
############################
Sample: VB40
Date: 6/21/05
Purpose:
4 layers of 4ML InAs0.9P01 Quantum dashes separated by 25nm of InGaAsP cladd with InP
For pump probe experiments
Very similar to VB38 and VB39 except with less quantum dash layers
DRS exists; ver 2.0 with InPFe.mtl material file 900-1250nm at 75nm/min
DRS spectrum file exists
During the oxide desorption; Tc was increased by 20C
weak PL: InGaAsP exists with possibly a very weak broad background due to the InAsP
############################
Sample: VB39
Date: 6/20/05
Purpose:
10 Layers of InAs0.9P0.1 with 30nm InGaAsP between the Quantum dash layers; clad with InP
For pump probe experiments
Very similar to VB38 except with more InGaAsP between the dash layers and with a higher Ga temperature hopefully of offset the strain from the InAsP layers
DRS exists; ver 2.0 with InPFe.mtl material file; 900 to 1250nm at 75nm/min
DRS spectrum exists (big change after the quantum dash layers)
Sample slightly cloudy; oxide may not have been completely desorbed
weak PL: InGaAsP peak with a broad background possibly due to the InAsP
############################
Sample: VB38
Date: 6/18/05
Purpose:
10 layers of 4ML InAs0.9P0.1 each seperated by 15nm of InGaAsP clad with InP
For pump probe experiments
DRS exists: ver 2.0 with InPS.mtl material file initially then with InPFe.mtl material file after InPFe.mtl in the ver 2.0 folder was modified with the ver1.9 coefficients.
DRS spectrum also exists
Note this is a double polished undoped sample
PL at 1380 (InGaAsP) (weak). no InAsP signal
############################
Sample: VB37
Date: 6/17/05
Purpose:
4ML of InAs0.9P0.1 Quantum dashes embedded in 120nm of InGaAsP with InP cladding layers.
Grown at Tc=470 C; this is the capped structure similar to VB25 but at a lower growth temperature.
DRS exists; ver 2.0 with InPS.mtl material file 900 to 1250nm at 75nm/min
DRS spectrum file also exists
PL =~1384 (InGaAsP) and 1600nm
Xray fitting being done by Elisabeth
############################
Sample: VB36
Date: 6/16/05
Purpose:
Deposit 4ML of InAs0.9P0.1 Quantum dashes on InGaAsP at 570C
Basically this is Sample VB35 capped with InGaAsP and InP
DRS exists with ver 2.0 and InPS.mtl material file; scanning 900 to 1250 nm at 75nm/min
Due to an apparent backlash in the As valve, each InGaAsP layer was growth at lightly different As valve settings
PL at 1345, 1425 (InGaAsP layers) and 1603 (InAsP)
Xray to Elisabeth for curve fitting
############################
Sample: VB35
Date: 6/10/05
Purpose:
3ML of InAs QDs on InGa0.7As on InGaAsP
DRS Data Exists; version 2.0 with InPS.mtl material file (used a sulfur doped substrate)
Substrate temp Tc=570
Comparison to VB30 and VB31
PL=1359 (Quat layer); Xray=?
############################
Sample: VA6
Date: 6/9/05
Purpose:
Si and Be doping calibration InP film for SIMS
Two different Si and Be temperatures
On Reactor 1
############################
Sample: VB34
Date: 6/8/05
Purpose:
4ML of InAsP Quantum dashes on InGaAsP
Substrate temperature of 470
DRS Exists; version 2 with InPS.mtl material file (the wafer is sulfur doped)
For comparison to VB25
PL=?; Xray=?
############################
Sample: VA5
Date: 6/7/05
Purpose:
InGaAsP Calibration run on Reactor 1 for In1 and Ga1
48nm InP/56.2nm InGa0.144As0.511P on InP
During the last 5 min of the buffer layer P_R and P_BFM was starting to drop. Managed to deposit the 5min InGaAsP as desired but only 5 mins of the InP cap layer. P started to rapidily decrease ~7 mins after the upper InP layer growth was terminated.
PL= 1348; Xray=-1660"
############################
Sample: VB33
Date: 6/3/05
Purpose:
InGaAsP Calibration with In2 and Ga2
DRS exists; ver 2.0 with InPS.mtl material file even though the substrate was Zn doped
PL at 1118nm; Xray at +120"
############################
Sample: VB32
Date: 6/2/05
Purpose:
3ML of InAs QD sample embedded within the center of a 120nm thick InGa0.28As0.6P layer. The QDs are deposited on InGa0.7As.
Substrate temperature during the dot deposition was 470C
DRS exists. Ver 2.0 with InPS.mtl material file even though the substrate was doped with Zn
PL at 1370 nm for the InGaAsP layer
PL peak at 1550nm but with a weird long wavelength intensity drop possibly due to the roll off of the Ge detector
Xray=~347" (broad flat topped peak possibly due to an interference affect)
############################
Sample: VB31
Date: 6/1/05
Purpose:
3ML InAs QDs on InGa0.7As on InGa0.28As0.6P
For AFM
Substrate temperature is 470C
DRS exists v2.0 with InPS.mtl material file although the substrate was Zn doped
PL not observed; Xray= 170"
############################
Sample: VB30
Date: 5/26/05
Purpose:
3ML of InAs QDs in InGa0.7As on InGa0.28As0.6P
Grown at Tc=520; DRS=~475
DRS exists; ver 2.0 with InPS.mtl material file even though this is a p-type substrate
PL at 1315nm; Xray=~-400"
############################
Sample: VB29
Date: 5/25/05
Purpose:
2ML of InAs QDs in InGa0.7As on InGa0.28As0.6P
Grown at Tc=520; DRS=~475
DRS exists; ver 2.0 with InPS.mtl material file even though this is a p-type substrate
PL at 1340nm; Xray=~-250"
AFM showed a few QDs in a 1um x 1um scan
############################
Sample: VB28
Date: 5/24/05
Purpose:
InGaAsP Calibration confirmation with In2 and Ga2
DID NOT WORK AS EXPECTED
wanted 31% Ga and 67% As
DRS with ver 2.0 and InPS.mtl material file even though this was a P-type sample.
NO PL
Xray appears just to be relaxed InP; the quat pk is >-3000" away.
Structure: InP/InP:Be/InP:Si/InP:Be/InP:Si where the upper Be and Si layers were grown with the dopant cells 50 deg lower than the lower Be and Si layers. Each layer should be 290 nm thick
The sample was grown for SIMS
DRS data: Version 2.0 with InPS.mtl material file even though the substrate was Fe doped (semiinsulating) . The material file InPFe.mtl just gave Error #-58
PL at 925 nm
############################
Sample: VB26
Date: 5/16/05
Purpose:
InAs Quantum Dots on InGa0.7As at low substrate temperature
Both Ga1 and Ga2 were used during the InGaAs layer
DRS data: version 2.0 with InPS.mtl material file even though the substrate was doped with Zn
This is the first run after a P conversion
No PL. Xray=~ -330"
This is an AFM sample.
############################
Sample: VB25
Date: 5/12/05
Purpose:
InAs0.9P0.1 Quantum dots grown at a lower substrate temperature
DRS Data with version 2.0 and InPS.mtl material file even though the substrate was p type
QDs on 60.5 nm InGa0.25As0.626P
P flux decreasing as the substrate temperature was decreasing (running out of P)
PL at 1380; Xray=-692" (basically short of P)
AFM results exist (dashes smaller that VB 23)
############################
Sample: VB24
Date: 5/11/05
Purpose:
InGaAsP calibration run with In2 and Ga2
DRS used; ver 2.0 with InPS.mtl file; 950-1250nm at 35nm/s (Zn doped substrate)
115nm of InGa0.22As0.47P Between InP layers
PL at 1208nm, Xray=+65nm
According to xray there is an interface layer of InAs between the InGaAsP and the upper InP layer
############################
Sample: VB23
Date: 5/10/05
Purpose:
InAs based QD sample suitable for AFM
4ML of InAs0.9P QD dot layer on InGaAsP (lambda~1280nm)
The QD layer is the uppermost layer so that the QDs can be examined by AFM
DRS exists; Ver 2.0 with InPS.mtl (note the substrate is Zn doped)
PL: broad peak from 1500 to 1800nm (the Ge detector response may be affecting the upper wavelength end)
AFM indicated that dots were not formed like in the case of InAs on GaAs but perhaps quantum dashes were formed
4ML of InAs0.9P0.1 QD layer surrounded by InGaAsP (lambda=1245nm) and InP
DRS data exists using ver 2 with InPS.mtl (note the substrate is Zn doped)
PL=1245nm from the cladding layer AND 1530nm from the InAsP layer
the 1530 nm peak is very strong
############################
Sample: VB21
Date: 5/6/05
Purpose:
First Attempt to achieve InAs based Quantum dots
InAs0.9P0.1 quantum dots embedded in InGa0.28As0.61P (PL=1280nm)
PL peaks at 1280 and 1450nm
From xray, the InAsP is acting as a layer as opposed to QDs
DRS operational Ver2.0 with InPS.mtl material file
Used In1 and Ga1 cells
############################
Sample: VB20
Date: 5/5/05
Purpose:
InGaAsP with In2 and Ga2
DRS ver2 with InPS.mtl material file
Weak PL at 1080nm; Xray pk at ~840nm
25nm of InGa0.202As0.325P
############################
Sample: VB19
Date: 5/4/05
Purpose:
InGaAsP Calibration using In2 and Ga2
No DRS; Bulb not working
No PL observed but no obvious InGaAsP xray peak only a relaxed InP peak
############################
Sample: VB18
Date: 5/3/05
Purpose:
InGaAsP Calibration with In1 and Ga1
In0.577Ga0.423As0.915P0.085 surrounded by InP
Zn doped substrate
DRS not used; bulb burnt out
As BFM is 144% of the P BFM measurement
PL at 1505nm; Xray Pk separation=-51" (0% relaxed film)
############################
Sample: VB17
Date: 5/2/05
Purpose:
InGaAsP Calibration with In1 and Ga1
In0.776Ga0.224As0.5615P0.4385 surrounded by InP
Zn doped substrate
DRS not used; bulb burnt out
As BFM is 24% of the P BFM measurement
PL at 1280nm; Xray Pk separation=-558" (0% relaxed film)
############################
Sample: VB16
Date: 4/29/05
Purpose:
InGaAsP Calibration with In1 and Ga1
In0.844Ga0.156As0.415P0.585 surrounded by InP
Zn doped substrate
DRS used; Version 2.0 and InPS.mtl material file (note the material file assumes S doping). For the same Tc (570C), DRS measures a higher temperature than the sulfur doped samples
As BFM is 11% of the P BFM measurement
PL at 1167nm; Xray Pk separation=-633" (0% relaxed film)
############################
Sample: VB15
Date: 4/28/05
Purpose:
InGaAsP Calibration with In1 and Ga1
In0.989Ga0.091AsP surrounded by InP
Zn doped substrate
DRS used; Version 2.0 and InPS.mtl material file (note the material file assumes S doping). For the same Tc (570C), DRS measures a higher temperature than the sulfur doped samples
As BFM is 11% of the P BFM measurement
PL at 1222nm; Xray Pk separation>-1000" (Partially relaxed film)
############################
Sample: VB14
Date: 4/27/05
Purpose:
InGaAsP Calibration with In1 and Ga1
In0.989Ga0.0.091As0.3155P0.6845 surrounded by InP
Zn doped substrate
DRS used; Version 2.0 and InPS.mtl material file (note the material file assumes S doping). For the same Tc (570C), DRS measures a higher temperature than the sulfur doped samples
As BFM is 8% of the P BFM measurement
PL at 1132nm; Xray Pk separation=-984" (0% relaxed film)
DRS used; v2.0 with InP1.mtl (Reads high) and with InPS.mtl (reads correct for n type samples)
Growth initiated 1 min after a column V change
PL ~1170nm implying roughly In0.84Ga0.16As0.5P0.5
Quat layer is partially relaxed as indicated by the strain upper InP layer as determined by xray
############################
Sample: VB12
Date: 4/22/05
Purpose:
To determine lattice matched InGaAsP with low Ga and As content
Used In1 and Ga1 to grow In0.95Ga0.05As0.1P0.9
P_BFM with As was 10% of the P_BFM with P
Used the DRS v1.96 with InPS.mtl data file
Oxide Desorption achieved by increasing Tc to 600C (T_DRS=500)
############################
Sample: VB11
Date: 4/21/05
Purpose:
To determine a lattice-matched InGaAsP film using In1 and Ga1
This is the first InP film grown on Reactor 2
No RHEED pattern visible
Oxide desorption failed. The film was gray after the buffer layer was grown as observed via the camera
Ramped Tc to 500.
Used DRS v2.0 with InP1.mtl. In theory, the substrate temperature was ramped to 490C.
############################
Sample: VB10
Date: 4/15/05
Purpose:
To grow an InGaAlP/InGaP/InGaAlP Red Emitter to reverify the In cell
temperatures
In0.5Ga0.3Al0.2P using In1 and Ga1
InGaP using In2 and Ga2
3" Substrate allowing DRS to be used throughout the entire film even when the sample was rotating
RHEED pattern seen prior to GaAs buffer layer
The film came out "gray". Turns out the As flux was low although
it was not realized during the growth. The low As flux was notice during
the VB11 experiment flux measurements
############################
Sample: VA4
Date: 4/13/05
Purpose:
To calibrate the In2 cell via the growth of InGaP using the Ga2 cell
A RHEED pattern was observed after the GaAs buffer layer
No RHEED pattern observed after the InGaP layer
The film did not look dark as observed from the camera
2" GaAs substrates used
############################
Sample: VB9
Date: 4/11/05
Purpose:
GaAs film on a 3" GaAs substrate to determine to see if one can observe a RHEED pattern.
RHEED pattern observed, but not RHEED oscillations
Only a GaAs film was grown
Due to the 3" substrate, there is continuous DRS trend data
############################
Sample: VA3
Date: 4/7/05
Purpose:
To calibration the In1 cell via the growth of InGaP using the Ga1 cell
No RHEED
P cell measured the white zone while operating the red zone heater
############################
Sample: VA2
Date: 3/4/05
Purpose:
To Calibrate the Ga2 and Al cells on Reactor #1
No RHEED or DRS
There is an error in the recipe: Ga2 shutter did not open correctly.
Instead of an hour of AlGaAs, it was ~40min of AlAs and 20min of
AlGaAs.
############################
Sample: VA1
Date: 3/3/05
Purpose:
To Calibrate the Ga1 and Al cells on REACTOR #1
No DRS or RHEED
First film on Reactor 1
############################
Sample: VA0
Date: 3/1/04
Purpose:
Initial Flux vs temperature data
############################
Sample: VB8
Date: 2/28/05
Purpose:
To calibrate In2 using Ga2 via the growth in InGaP
DRS Used
No RHEED
First time using a Wafer Technology 2" GaAs wafer
############################
Sample: VB7
Date: 2/25/05
Purpose:
Calibrate In2 cell via the growth of InGaP
Used the Ga2 cell
Ran out of P after ~0.5 hr (total growth time was suppose to be 4 hrs)
Ga2 cell temperature was determined by matching the In2 cell flux * a fudge factor (1/1.751)
DRS Used
No RHEED
############################
Sample: VB6
Date: 2/23/05
Purpose:
Calibrate the In1 Cell via the Growth of InGaP
############################
Sample: VB4
Date: 1/18/05
Purpose:
To growth a PBG test structure for Reggie; Also to confirm/calibrate the
Ga1, Ga2 and Al cells
No RHEED or DRS
############################
Sample: VB3
Date: 1/10/05
Purpose:
Ga1, Ga2 and Al Cell calibrations
No RHEED
FILM FAILED- As shutter was not open when the buffer layer was started.