6.     Kan E. W. H., Choi W. K., Leoy C. C., Chim W. K., Antoniadis D. A.&  Fitzgerald E. A., “Effect of Annealing             Profile on Defect Annihilation, Crystallinity and Size Distribution of Germanium Nanodots”, Applied             Physics Letters, Vol. 83, No. 10, pp. 2058-2060 (2003).

    7.     Ho V., Teo L. W., Choi W. K., Chim W. K., Tay M. S., Antoniadis D. A.,  Fitzgerald E. A., Du A. Y., Tung C. H.,             Liu R. & Wee A. T. S., “Effect of Germanium Concentration and Tunnel Oxide Thickness on Nanocrystal             Formation and Charge Storage/Retention Characteristics of a Trilayer Memory Structure”, Applied
            Physics Letters, Vol. 83, No. 17, pp. 3558- 3560 (2003).

    8.     Kan E. W. H., Choi W. K., Chim W. K., Fitzgerald E. A. & Antoniadis D. A.,    “Origin of Charge Trapping in             Germanium Nanocrystal Embedded SiO2 System: Role of Interfacial Traps?”, Journal of Applied Physics,             Vol. 95, No. 6, pp. 3148-3152 (2004).

    9.     Kan E. W .H., Leoy C. C., Choi W. K., Chim W. K. Chow S. Y. Fitzgerald E.  A. & Antoniadis D. A.,             “CrystallinityStudy of Germanium Nanodots Synthesized via the Reduction of Si0.54Ge0.46 Oxides”,              Transactions of the Materials Research Society of Japan, Vol. 29, No. 1, pp. 107-110 (2004).

Conference Publications

    1.     Choi W. K., Pey K. L. & Zhao H. B., “Nickel Silicidation on Polycrystalline  Silicon Germanium Films”, 8th             International Conference on Electronics Materials, Xian, China, 10-15 June 2002.

    2.     Choi W. K., Leoy C. C., Arianto J., Kan E. W. H., Wee A. T. S. & Liu Y. J.,  “Oxidation Study and Formation of             Ge Nanocrystals in RF Sputtered Polycrystalline Silicon Germanium Films”, 8th International Conference             on Electronics Materials, Xian, China, 10-15 June 2002.

    3.     Teo L. W., Heng C. L., Ho V., Tay M., Choi W. K., Chim W. K., Antoniadis D. A. & Fitzgerald E. A.,             “Manipulation of Germanium Nanocrystals in a Tri- Layer Insulator Structure of a Metal-Insulator-
            Semiconductor Memory Device”, presented at the Materials Research Society Symposium Proceedings,             Vol. 728, pp. S5.7.1-S5.7.6, USA, April 2002.

    4.     Heng C. L., Choi W. K., Chim W. K., Teo L. W., Ho V., Tjiu W. W & Antoniadis  D. A., “Charge Storage Effect in             a Tri-Layer Structure Comprising Germanium Nanocrystals”, The 2nd Singapore-MIT Alliance Annual             Symposium, Singapore, 14-16 January 2002.

    5.     Teo L.W., Heng C. L., Ho V., Tay M., Choi W. K., Chim W. K., Antoniadis D. A . & Fitzgerald E. A., “Synthesis of
             Germanium Nanocrystals and its Possible Application in a Memory Device”, The 2nd Singapore-MIT             Alliance  Annual Symposium, Singapore, 14-16 January 2002.

    6.     Teo L. W., Ho V., Tay M. S., Lei Y., Choi W. K., Chim W. K., Antoniadis D. A. & Fitzgerald E. A., “Charge             Storage Mechanism and Size Control of Germanium Nanocrystals in a Tri-Layer Insulator Structure of a  MIS             Device”, The 3rd Singapore-MIT Alliance Annual Symposium, Singapore, 17-18 January 2003.

    7.     Kan E. W. H., Leoy C. C., Choi W. K., Chim W. K., Antoniadis D. A. & Fitzgerald E. A., “Formation of             Nanocrystalline Germanium via Oxidation of Si0.54Ge0.46 for Memory Device Applications”, The 3rd             Singapore- MIT Alliance Annual Symposium, Singapore, 17-18 January 2003.

    8.     Kan E. W .H., Leoy C. C., Choi W. K., Chim W. K., Chow S. Y., Fitzgerald E. A. & Antoniadis D. A., “Crystallinity             Study of Germanium Nanodots Synthesized via the Reduction of Si0.54Ge0.46 Oxides”, IUMRS-ICAM 2003,             Yokohama, Japan, 8-13 October 2003.

    9.     Leoy C. C., Kan E. W. H., Tan J. M. T., Choi W. K., Chim W. K., Ji R., Du A., Tung C. H. & Chow S. Y,             “Synthesis of Ge Nanocrystals from Oxidation of Si0.54Ge0.46 Films and Observation of Memory Effect”,             International Conference on Materials for Advanced Technologies (ICMAT 2003), Singapore, 7-12             December 2003.

    10.   Ng T. H., Ho V., Teo L. W., Tay M. S., Koh B. H., Chim W. K., Choi W. K., Du A. & Tung C. H., “Fabrication             and Characterization of a Trilayer Germanium Nanocrystal Memory Device with Hafnium Dioxide as the             Tunnel Dielectric”, International Conference on Materials for Advanced Technologies (ICMAT 2003),             Singapore, 7-12 December 2003.

    11.   Chen Z., Lei Y., Chew H. G., Teo L. W., Choi W. K. & Chim W. K., “Synthesis of Germanium Nanodots on             Silicon using an Anodic Alumina Membrane Mask”, International Conference on Materials for Advanced             Technologies (ICMAT 2003), Singapore, 7-12 December 2003.
   
 Mechanical Behavior of Bulk Metallic Glasses

Journal Publications

    1.     Lee M. L., Li Y., Feng Y. P. & Carter C. W., “Study of Frequency Dependence Modulus of Bulk Amorphous             Alloys around the Glass Transition by Dynamic Mechanical Analysis”, Intermetallics, Vol. 10, Issues 11-12,             pp. 1061-1064 (2002).

    2.     Lee M. L., Li Y., Feng Y. P. & Carter C. W., “Frequency-Dependent Complex  Modulus at the Glass Transition             in Pd40Ni10Cu30P20 Bulk Amorphous Alloys”, Physical Review B, Vol. 67, pp. 132201(2003).

Conference Publication

Lee M. L., Li Y. & Carter C. W., “Mechanical Properties of La-based Bulk  Amorphous Alloy and Composites”, Proceedings of MRS Fall 2002 Meeting. Oxidation and Silicidation of Epitaxial SiGe Films
    
Oxidation and Silicidation of Epitaxial SiGe Films

Journal Publications


    1.     Tan C. S., Choi W. K., Bera L. K., Pey K. L., Antoniadis D. A. & Fitzgerald E. A., “N2O Oxidation of Strained             Si/Relaxed SiGe Heterostructure Grown by UHVCVD”, Solid State Electronics, Vol. 45, pp. 1945 (2001).

    2.     Zhao H. B., Pey K. L., Choi W. K., Chattopadhyay S., Fitzgerald E. A. & Antoniadis D. A., “Interfacial Reactions             of Ni on Si1-xGex (x=0.2, 0.3) at Low Temperature by Rapid Thermal Annealing”, Vol. 92, No. 1, pp. 214- 217             (2002).

    3.     Pey K. L., Choi W. K., Chattopadhyay S., Zhao H. B., Fitzgerald E. A., Antoniadis D. A. & Lee P. S., “Thermal             Reaction of Nickel and Si0.75Ge0.25 Alloy”, Journal of Vacuum Science Technology A, Vol. 20, No. 6, pp.             1903 (2002).

    4.    Pey K. L., Choi W. K., Chattopadhyay S., Miron Y., Fitzgerald E. A., Antoniadis D. A. & Ospowicz T., “On the             Stability and Composition of Ni- Germanosilicided Si1-xGex Films”, Journal of Vacuum Science Technology             B, Vol. 22, No. 2, pp. 852 (2004) (accepted).


Conference Publication

Jin L. J., Pey K. L., Choi W. K., Fitzgerald E. A., Antoniadis D. A., Pitera A. J.,     Lee M. L. & Chi D. Z., “Study of Nickel (Platinum) (Pt at.% = 0, 5, 10)     Germanosilicide Formation using MicroRaman Spectroscopy”, to be presented at MRS’04 Spring meeting.


Piezoelectric Ceramics

Journal Publication

Yao L. Q. & Lu L., “Hybrid-Stabilized Solid-Shell Model of Laminated Composite Piezoelectric Structures under Nonlinear Distribution of Electric Potential Through-Thickness”, Journal of Numerical Method in Engineering, Vol. 58, pp. 1499-1522 (2003).

Conference Publications

    1.     Sanatan C., Pey K. L., Choi W. K., Chi D. Z., Antoniadis D. A. & Fitzgerald E. A., “Identification of Deep Traps             in a Compositionally Graded n- Si0.75Ge0.25 Alloy using Ti Schottky Diode”, presented at The International             Conference on Communications, Computer & Devices, IIT Kharagpur, India, 14-16 December 2000.

    2.    Zhu T. J. & Lu L., “Improvement of Pb(Zr0.52Ti0.48)O3 Thin Films with LaNiO3 as Bottom Electrodes on Si             Substrates”, The 8th IUMRS International Conference on Advanced Materials, Yokohama, Japan, 8-13            October 2003.

SiGe Optical Communication Component

Journal Publications

    1.     Li B. J., Chua S. J., Leitz C. W. & Fitzgerald E. A., “1x2 Optical Waveguide Filters based on Multi-Mode             Interference for 1.3- and 1.55- µm Operation”, Optical Engineering, Vol. 3, No. 3, pp. 723-727 (2002).

    2.     Li B. J., Chua S. J. & Fitzgerald E. A., “Theoretical Analysis of Si1-x-yGexCy Near-Infrared Photodetectors”,             Optical Engineering, Vol. 42, No. 7, pp. 1993-1999 (2003). Structure Evolution of Growth of III-Nitrides on             Silicon


Structure Evolution of Growth of III-Nitrides on Silicon

Journal Publication

Zang K. Y., Chua S. J., Wang L. S. & Thompson C. V., “Evolution of AlN Buffer Layers on Silicon and Effects on the Properties of Epitaxial GaN Films”, Physica Status Solidi (c), No. 7, pp. 2067- 2071 (2003).
    
Conference Publication

Zang K. Y., Wang L. S., Chua S. J. & Thompson C. V. , “Structural Analysis of     Metalorganic Chemical Vapor Deposited AlN Nucleation Layers on Si (111)” presented at International Conference for Materials and Technology (ICMAT 03), pp. 8-12, Singapore, December 2003. Thin Film Microbatteries for Integration with Microelectronics


Thin Film Mircobatteries for Integration with Microelectronics

Journal Publication

Zhao J., Lu L., Thompson C. V., Lu Y. F. & Song W. D., “Preparation of (001)- Oriented PZT Thin Films on Silicon Wafers using Pulsed Laser Deposition”, Journal of Crystal Growth, Vol. 225, pp. 173 (2001).

  
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