Atomic-layer-deposited atomically thin In2O3 channel for BEOL logic and memory applications
13th October 2021
Timing : 1 pm EST
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In this talk, we report on the first demonstration of atomically thin In2O3 channel for logic and memory devices by a back-end-of-line (BEOL) compatible atomic layer deposition (ALD) process. High performance planar In2O3 transistors with high mobility of 113 cm2/V⋅s and record high maximum drain current of 2.5 mA/um are achieved by channel thickness engineering and post-deposition annealing. High-performance ALD In2O3 based zero-VGS-load inverter is demonstrated with maximum voltage gain of 38 V/V and minimum supply voltage (VDD) down to 0.5 V. ALD In2O3 3D Fin transistors are also demonstrated, benefiting from the conformal deposition capability of ALD. High-performance In2O3 ferro-electric transistors are demonstrated using ALD HfZrO2 gating with >2.2V large memory window, >10 years retention and >108 endurance. These results suggest ALD oxide semiconductors and devices have unique advantages and are promising toward BEOL-compatible monolithic 3D integration.