Atomic-layer-deposited atomically thin In2O3 channel for BEOL logic and memory applications

13th October 2021

Timing : 1 pm EST

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For a list of all talks at the NanoBio seminar Series Fall'21, see here


In this talk, we report on the first demonstration of atomically thin In2O3 channel for logic and memory devices by a back-end-of-line (BEOL) compatible atomic layer deposition (ALD) process. High performance planar In2O3 transistors with high mobility of 113 cm2/V⋅s and record high maximum drain current of 2.5 mA/um are achieved by channel thickness engineering and post-deposition annealing. High-performance ALD In2O3 based zero-VGS-load inverter is demonstrated with maximum voltage gain of 38 V/V and minimum supply voltage (VDD) down to 0.5 V. ALD In2O3 3D Fin transistors are also demonstrated, benefiting from the conformal deposition capability of ALD. High-performance In2O3 ferro-electric transistors are demonstrated using ALD HfZrO2 gating with >2.2V large memory window, >10 years retention and >108 endurance. These results suggest ALD oxide semiconductors and devices have unique advantages and are promising toward BEOL-compatible monolithic 3D integration.




Snow
Peide (Peter) Ye
Richard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering
Purdue University

Dr. Peide (Peter) Ye is Richard J. and Mary Jo Schwartz Chair Professor of Electrical and Computer Engineering at Purdue University in USA. He received Ph.D. from Max-Planck-Institute of Solid State Research, Stuttgart, Germany, in 1996. Before joining Purdue faculty in 2005, he worked for NTT, NHMFL/Princeton University, and Bell Labs/Lucent Technologies/Agere Systems. His current research is focused on ALD high-k integration on novel channel materials include III-V, Ge, complex oxides and 2D crystals. He authored and co-authored more than 300 peer reviewed articles and 500 conference presentations. He is Fellow of IEEE and APS. He is also recognized as a Highly Cited Researcher among 6000 world wide in all fields.