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To date, SMA Fellows have published 366
articles in 289 journals while 51 articles have been accepted for publication in 43 journals. Some
articles are listed under more than one category. |
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AMM&NS Programme |
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Collaborative Research Projects with SMA-MIT Fellows |
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Carbon Nanotubes
Journal Publication
Krishnan R., Nguyen H. Q., Thompson C. V., Choi W. K. & Foo Y. L., “Wafer-Level Ordered Arrays of Aligned Carbon Nanotubes with Controlled Size and Spacing on Silicon”, Nanotechnology (accepted).
Copper Reliability
Journal Publications
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Gan C. L., Thompson C. V., Pey K. L., Choi W. K., Tay H. L., Yu B. & Radhakrishnan M. K., “Effect of Current Direction on the Lifetime of Different Levels of Cu Dual-Damascene Metallization”, Applied Physics Letters, Vol. 79, pp. 4592 (2001).
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Gan C. L., Thompson C. V., Pey K. L. & Choi W. K., “Experimental Characterization and Modeling of the Reliability of 3-Terminal Dual-Damascene Cu Interconnect Trees”, Journal of Applied Physics, Vol. 94, No. 2, pp. 1222-1228 (2003).
Conference Publications
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Gan C. L., Thompson C. V., Pey K. L., Choi W. K., Wei F., Yu B. & Hau-Riege S. P., “Experimental Characterization of the Reliability of 3-Terminal Dual-Damascene Copper Interconnect Tress”, Proceedings of MRS Spring 2002 Meeting.
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Wei F., Gan C. L., Thompson C. V., Clement J. J., Hau-Riege S. P., Pey K. L., Choi W. K., Tay H. L., Yu B. & Radhakrishnan M. K., “Length Effects on the Reliability of Dual-Damascene Cu Interconnects”, Proceedings of MRS Spring 2002 Meeting.
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Gan C. L., Wei F., Thompson C. V., Pey K. L., Choi W. K. & Yu B., “Consequence of Preferential Void Formation at the Cu/Si3N4 Interface on the Multiple Failure Mechanisms of Cu Dual-Damascene Metallization”, presented at IPFA2002.
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Gan C. L., Thompson C. V., Pey K. L., Choi W. K., Chang C. W. & Guo Q., “Effect of Current Direction on the Reliability of Multi-Terminal Cu Dual-Damascene Interconnect Trees”, Proceedings of IEEE IRPS2003, pp. 594-595.
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Gan C. L., Wei F., Thompson C. V., Pey K. L., Choi W. K., Hau-Riege S. P. & Yu B., “Contrasting Failure Characteristics of Different Levels of Cu Dual-Damascene Metallization”, 2002 European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Rimini, Italy, 9 October 2002.
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Gan C. L., Thompson C. V., Pey K. L., Choi W. K., Chang C. W. & Guo Q.,“Experimental Characterization of the Reliability of Multi-Terminal Dual-Damascene Copper Interconnect Trees”, MRS 2003, Vol. 766.
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Chang C. W., Gan C. L., Thompson C. V., Pey K. L. & Choi W. K, “Observation of Joule-Heating-Assisted Electromigration Failure Mechanisms for Dual Damascene Cu/SiO2 Interconnects”, Proceedings of IEEE IPFA2003, pp. 69-74.
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Chang C. W., Gan C. L., Thompson C. V., Pey K. L., Choi W. K. & Hwang N. “Mortality Dependence of Cu Dual Damascene Interconnects on Adjacent Segment”, presented at MRS’04 Spring Meeting, 13-15 April 2004. Proceeding MRS Spring meeting, pp. F7.2.1-F7.2.6, 2004
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Choi Z. S., Gan C. L., Wei F., Thompson C. V., Lee J. H., Pey K. L. & Choi W. K., “Fatal Void Size Comparisons in Via-Below and Via-Above Cu Dual-Damascene Interconnects”, presented at MRS’04 Spring meeting, April 2004, USA. Proceeding MRS Spring meeting, F7.6.1-F7.6.6, 2004.
GaN on Si
Journal Publications
- Wang L. S., Zang K. Y., Tripathy S. & Chua S. J., “Effects of Periodic Delta-Doping on the Properties of GaN:Si Films Grown on Si (111) Substrate”, Applied Physics Letters, Vol. 85, No. 24, pp. 5881-5883 (2004).
- Zang K. Y., Wang L. S., Chua S. J. & Thompson C. V., “Structural Analysis of Metalorganic Chemical Vapor Deposited AlN Nucleation Layers on Si(111)”, Journal Crystal Growth, Vol. 268, No. 3-4, pp. 515-520 (2004).
GaN Nanostructures
Journal Publication
Wang Y. D., Chua S. J., Sander M. S., Chen P., Tripathy S. & Fonstad C. G.,“Fabrication and Properties of Nanoporous GaN Films”, Applied Physics Letters, Vol. 8, No. 5, pp. 816-818 (2004).
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