To date, SMA Fellows have published 366 articles in 289 journals while 51 articles have been accepted for publication in 43 journals. Some articles are listed under more than one category.

Advanced Silicide

Journal Publications

1. Zhao H. B., Pey K. L., Choi W. K., Chattopadhyay S., Fitzgerald E. A., Antoniadis D. A. & Lee P. S., “Interfacial Reactions of Ni on Si1-xGex (x = 0.2, 0.3) at Low Temperature by Rapid Thermal Annealing”, Journal of Applied Physics, Vol. 92, No. 1, pp. 214-217 (2002).
   
   
2. Pey K. L., Choi W. K., Chattopadhyay S., Zhao H. B., Fitzgerald E. A., Antoniadis D. A. & Lee P. S., “Thermal Reaction of Nickel and Si0.75Ge0.25 Alloy”, Journal of Vacuum Science Technology A., Vol. 20(6), pp. 1903-1910 (2002).
   
   
3. Choi W. K., Pey K. L., Zhao H. B., Osipowicz T. & Shen Z. X., “Nickel Silicidation on Polycrystalline Silicon Germanium Films”, International Journal of Modern Physics B, Vol. 16, Issues 28-29, pp. 4323-4326 (2002).
   
   
4. Pey K. L., Choi W. K., Chattopadhyay S., Miron Y., Fitzgerald E. A., Antoniadis D. A. & Ospowicz T., “On the Stability and Composition of Ni-ermanosilicided Si1-xGex films”, Journal of Vacuum Science Technology B, Vol. 22(2), pp. 852-858, (2004).
   
   
5. Li Y. S., Lee P. S. & Pey K. L., “Ti/Co and Co/Ti Silicidation of Poly-Si Capped Poly-Si0.7Ge0.3 Substrate”, Thin Solid Films, Vol. 462-463, pp. 209-212 (2004).
   
   
6. Toledo N. G., Lee P. S. & Pey K. L., “Characterization of Junction Leakage of Ti-Capped Co- and Ni-Silicided Junctions”, Thin Solid Films, Vol. 462-463, pp. 202-208 (2004).
   
   
7. Jin L. J., Pey K. L., Choi W. K., Fitzgerald E. A., Antoniadis D. A., Chi D. Z. & Tung C. H., “The Interfacial Reaction of Ni on (111) Ge & (100) Si”, Thin Solid Films, Vol. 462-463, pp. 151-155 (2004).
   
   
8. Jin L. J., Pey K. L., Choi W. K. , Fitzgerald E. A., Antoniadis D. A., Pitera A. J., Lee M. L. & Tung C. H., “Highly Oriented Ni(Pd)SiGe Formation at 400 ºC”, Journal of Applied Physics, Vol. 97, pp. 104917-1-104917-5.

Conference Publications

1. Choi W. K., Pey K. L. & Zhao H. B., “Nickel Silicidation on Polycrystalline Silicon Germanium Films”, 8th International Conference on Electronics Materials, Xian, China, 10-15 June 2002.
   
   
2. Jin L. J., Pey K. L., Choi W. K., Fitzgerald E .A., Antoniadis D. A., Pitera A. J., Lee M. L. & Chi D. Z., “Study of Nickel (Platinum) (Pt at.% = 0, 5, 10) Germanosilicide Formation using Micro-Raman Spectroscopy”, presented at MRS’04 Spring meeting, USA, April 2004.
   
   
3. Li Y. S., Lee P. S. & Pey K. L., “Ti/Co and Co/Ti Silicidation of Poly-Si Capped Poly-Si0.7Ge0.3 Substrate”, Presented at ICMAT, Singapore, 7-12 December 2003.