Simple Process Sequences
This page allows you to quickly add some basic process sequences. Details are given below, and you can add the tools and descriptions by clicking the buttons below. Most of these sequences are designed for TRL users. If you are unsure about the sequences, and recipe parameters, please contact the staff in charge of the tool for a detailed discussion and advice.Instructions: Expand the appropriate sequence, and click the "add" button to add the sequence to the current process.
Standard thin-resist lithography, 1um (SPR700).
Step | Lab | Tool | Details | |
---|---|---|---|---|
Standard Resist Lithography | ||||
1 | TRL | HMDS-TRL | Dehydrate and enhance adhesion | |
2 | TRL | coater | Spin on 1um of SPR700 resist at 3500 rpm | |
3 | TRL | hotplate1 | Bake at 95C for 5 minutes | |
4 | TRL | EV1 | Expose for 2.5 seconds | |
5 | TRL | photo-wet-l | Develop in CD-26 for 70 to 90 seconds and inspect under microscope | |
6 | TRL | hotplate1 | Hard-bake at 120C for 2 minutes |
Image reversal lithography, 1.5um (AZ5214E).
Step | Lab | Tool | Details | |
---|---|---|---|---|
Image-reversal Lithography | ||||
1 | TRL | HMDS-TRL | Dehydrate and enhance adhesion | |
2 | TRL | coater | Spin on 1.5um of AZ5214E resist at 3500 rpm | |
3 | TRL | hotplate1 | Bake at 95C for 5 minutes | |
4 | TRL | EV1 | Expose for 1.3 seconds | |
5 | TRL | hotplate2 | Image-reversal bake at 120C for 2 minutes | |
6 | TRL | EV1 | Flood expose for 60 seconds | |
7 | TRL | photo-wet-l | Develop in AZ422MIF for 75 to 90 seconds and inspect under microscope |
Image reversal lithography followed by metal liftoff.
Step | Lab | Tool | Details | |
---|---|---|---|---|
Image-reversal Lithography | ||||
1 | TRL | HMDS-TRL | Dehydrate and enhance adhesion | |
2 | TRL | coater | Spin on 1.5um of AZ5214E resist at 3500 rpm | |
3 | TRL | hotplate1 | Bake at 95C for 5 minutes | |
4 | TRL | EV1 | Expose for 1.3 seconds | |
5 | TRL | hotplate2 | Image-reversal bake at 120C for 2 minutes | |
6 | TRL | EV1 | Flood expose for 60 seconds | |
7 | TRL | photo-wet-l | Develop in AZ422MIF for 75 to 90 seconds and inspect under microscope | |
Liftoff Deposition | ||||
8 | TRL | eBeamAu | Deposit ... nm of ... (less than 500 nm) | |
9 | TRL | photo-wet-r | liftoff: soak in acetone, usually overnight. if needed, clean sample ultrasonic bath in fresh acetone |
Thick photoresist lithography, 8-10um (AZ4620).
Step | Lab | Tool | Details | |
---|---|---|---|---|
Thick Photoresist | ||||
1 | TRL | HMDS-TRL | Dehydrate and enhance adhesion | |
2 | TRL | coater | Spin on 8um of AZ4620 resist at 3000 rpm | |
3 | TRL | hotplate1 | Bake at 110C for 3 minutes | |
4 | TRL | EV1 | Expose in 8 intervals of 3 seconds with 6 second wait | |
5 | TRL | photo-wet-l | Develop in AZ405MIF for 1-2 minutes and inspect under microscope | |
6 | TRL | prebakeovn | Bake in 90C oven for 30 minutes |
Thick photoresist followed by Si-wafer through-etch (DRIE)
Step | Lab | Tool | Details | |
---|---|---|---|---|
Thick Photoresist | ||||
1 | TRL | HMDS-TRL | Dehydrate and enhance adhesion | |
2 | TRL | coater | Spin on 8um of AZ4620 resist at 3000 rpm | |
3 | TRL | hotplate1 | Bake at 110C for 3 minutes | |
4 | TRL | EV1 | Expose in 8 intervals of 3 seconds with 6 second wait | |
5 | TRL | photo-wet-l | Develop in AZ405MIF for 3-5 minutes and inspect under microscope | |
Through Etch | ||||
6 | TRL | coater | Handle-mount wafer onto carrier with thick resist | |
7 | TRL | prebakeovn | Bake in 90C oven for 30 minutes | |
8 | TRL | sts-Pegasus | DRIE etch through wafer | |
Dismount and clean | ||||
9 | TRL | photo-wet-l | Dismount in acetone overnight and solvent clean | |
10 | TRL | asher-TRL | Optional: Ash 1 hour to clean up any remaining resist residues |
SU8 Lithography
Step | Lab | Tool | Details | |
---|---|---|---|---|
Thick Photoresist | ||||
1 | TRL | hotplate300 | dehydration bake for 5 mins | |
2 | TRL | SU8spinner | coat with SU8 | |
2 | TRL | hotplate300 | prebake ... mins @ ...C | |
2 | TRL | EV1 | expose ... seconds on special SU8 holder | |
2 | TRL | SU8spinner | develop ... mins in ... | |
2 | TRL | hotplate300 | hard-bake for ... mins at ...C |
6.152J Solar Cell Module - Process Flow
Step | Lab | Tool | Details | |
---|---|---|---|---|
Lab Session 1 | ||||
1 | ICL | DCVD | Deposit 10 nm of SiO2 | |
2 | ICL | DCVD | Deposit 60 nm of SiNx | |
3 | ICL | UV1280 | Measure film thickness and properties | |
4 | ICL | pTrack | Spin on 1um of SPR700 resist | |
5 | ICL | EV-LC | Expose with mask layer 1, 3.5 seconds | |
6 | ICL | pTrack | Develop resist with CD26, standard recipe. Inspect under microscope | |
7 | ICL | AME5000 | Etch the frontside dielectrics using SF6 and recipe JK NITRIDE | |
8 | ICL | AME5000 | Etch the backside dielectrics and epi layer. Epi etch is Cl based, recipe BASELINE POLY | |
9 | ICL | asher-ICL | Remove resist in 3 min ash | |
Lab Session 2 | ||||
8 | ICL | premetal-Piranha | Prianha clean (1:3 H2O2:H2SO4) for 10 mins, then 15 second 50:1 HF dip | |
9 | ICL | endura | Sputter 1 um of Al on the backside, followed by 2 um of Al on the frontside | |
10 | ICL | pTrack | Spin on 1um of SPR700 resist | |
11 | ICL | EV-LC | Expose with mask layer 2, 3.5 seconds, aligned to layer 1 | |
12 | ICL | pTrack | Develop resist with CD26, standard recipe. Inspect under microscope | |
13 | ICL | rainbow | Etch the frontside metal until almost all Al removed | |
14 | TRL | acid-hood | Remove the remainder of the metal with a wet Al etch | |
15 | ICL | photo-wet-r | Remove the resist using acetone, followed by an isopropyl rinse | |
16 | ICL | semZeiss | Optional - Inspect device in SEM | |
Lab Session 3 | ||||
15 | Other | OutsideLab | Test devices in bldg 13 |