Machines by Process Category: Etch
Many materials are either etched by chlorine or fluorine chemistries, and the etchers follow those lines (e.g. SAMCO is Cl based, while plasmaquest is F based). The type of etch gas (e.g. Cl2 vs BCl3, or SF6 vs CF4) and additional gases (e.g. Ar, O2, N2) can be critical for enabling certain types of etches over others. The mixing of fluorine and chlorine chemistries is strongly discouraged, as it can result in chamber hysteresis and irreproducible results.
A plasma can be generated by different means. Some tools heat or cool the sample, or apply a bias to modify the reactions taking place. Often, photoresist is used as a mask material (but not if the sample is heated - as this would burn the resist) but depending on the tool a hard mask (e.g. SiO2) may be necessary.
Process | Lab | Tool | Subcategory | Description | |
---|---|---|---|---|---|
EML | plasmatherm | PECVD, RIE | Plasma Etch and Deposition | ||
ICL | AME5000 | RIE | RIE etcher for frontend silicon processes | ||
ICL | LAM490B | RIE | Chlorine based plasma etching of silicon | ||
ICL | LAM590-ICL | RIE | Fluorine based plasma etching of silicon oxide and nitrides | ||
ICL | Oxford-100_PECVD | PECVD | Dual chamber PECVD and plasma etch tool | ||
ICL | Oxford-100_Etch | RIE | Dual chamber PECVD and plasma etch tool | ||
ICL | rainbow | RIE | Chlorine based plasma etcher for metals | ||
TRL | LAM590-TRL | RIE | Fluorine based plasma etching of oxide and nitrides | ||
TRL | plasmaquest | RIE | Fluorine and Chlorine general purpose plasma deposition and etch tool | ||
TRL | SAMCO | RIE | Chlorine based plasma etcher for III-V materials | ||
TRL | sts1 | DRIE | Deep reactive ion etcher for silicon | ||
TRL | sts2 | DRIE | Deep reactive ion etcher for silicon | ||
TRL | sts-Pegasus | DRIE | Deep reactive ion etcher for silicon | ||
TRL | UVozone-Au | Clean | Cleans residual organics | ||
TRL | XeF2 | RIE | XeF2 isotropic etching of silicon |