The solid source, dual-reactor Veeco GEN200 Molecular Beam System (MBE) system is capable of the epitaxial growth of dilute nitrides and antimony-based films in addition to arsenide- and phosphide-based films. The system platens hold 14-2”, 7-3" or 4-4" wafers, or a single 6" or 8" wafer. The system incorporates a low wobble manipulator that will enable in-situ feedback control of the epitaxial processes using optical sensors such as band edge absorption spectroscopy and spectroscopic ellipsometry.
The Veeco GEN200 Molecular Beam System Load Lock within the NanoPrecision Deposition Laboratory.
The Veeco GEN200 Molecular Beam System at the Veeco Compound Semiconductor factory in St. Paul, Minnesota during the system factory acceptance.
The Veeco Spector Ion Beam Deposition System was graciously donated to MIT by Veeco Ion-Tech. The system is design to deposit dielectric stacks for anti-reflective and high-reflective coatings on optical components. An optical monitor system consisting of a tunable laser (1460nm to 1580nm), motion controllers and quarter-wave monitoring capability controls the deposition process. The system currently has two silicon dioxide and one tantalum pentoxide targets.
The M-88 Variable Angle Spectroscopic Ellipsometer from J. A. Woollam Company Inc. is used to characterize thin films. The ellipsometer uses 88 discrete wavelengths of light between 280nm and 780nm to determine the thicknesses and indices of refraction of the thin films.
