Equipment
| Lab and Coral Name | ICL / 4-pt-probe |
| Model | 0 |
| Specialist | Bernard Alamariu (Eric Lim) |
| Physical Location | 2F 1-South Metrology |
Classification
| Process Category | Metrology |
| Subcategory | Electrical |
| Material Keywords | CMOS Metals, Non-CMOS Metals |
| Sample Size | 6" Wafers |
| Alternative | TRL / IV-probe |
| Keywords | single wafer, manual load, top side of sample, manual operation, alignment |
Description
The 4-pt-probe allows for sheet resistance measurements of Si or Ge films or substrates (no metals). Samples are loaded via vacuum wand onto the stage. Manual translational and rotational movements allow measurements at different sample locations.
| Best for | Annealed in-situ doped or dopant-implanted Si and Ge films |
| Limitations | |
| Characteristics/FOM | |
| Caution with | Probing current ranges must be adjusted according to the doping level of the film. Thin film measurements require a pn junction below the film to be measured. |
| Machine Charges | 2/hour |
Documents
Process Matrix Details
Permitted
Not Allowed
Ever been in EMLSamples from EML are never permitted to return to ICL or TRL
For more details or help, please consult PTC matrix, email ptc@mtl.mit.edu, or ask the research specialist (Bernard Alamariu)