Equipment
| Lab and Coral Name | ICL / cv |
| Model | Boonton |
| Specialist | Bernard Alamariu (Eric Lim) |
| Physical Location | 2F 1-South Metrology |
Classification
| Process Category | Metrology |
| Subcategory | Electrical |
| Material Keywords | CMOS Metals, Non-CMOS Metals |
| Sample Size | 6" Wafers |
| Alternative | TRL / IV-probe |
| Keywords | single wafer, manual load, top side of sample, manual operation, alignment |
Description
The cv is a Capacitance-Voltage meter connected to and open probe station with temperature-controlled chuck. The system is designed to perform temperature-bias stress in order to measure the level of mobile ion contamination in MOS gate dielectrics.
| Best for | SiO2 quality characterization |
| Limitations | only one frequency (1MHz) available |
| Characteristics/FOM | frequency 1MHz, bias XX, Temperature up to 200C |
| Caution with | |
| Machine Charges | 1/wafer |
Documents
Process Matrix Details
Permitted
Not Allowed
Ever been in EMLSamples from EML are never permitted to return to ICL or TRL
For more details or help, please consult PTC matrix, email ptc@mtl.mit.edu, or ask the research specialist (Bernard Alamariu)