Equipment
| Lab and Coral Name | ICL / epi-Centura |
| Model | AMAT Centura 5200 |
| Specialist | Gary Riggott (Eric Lim) |
| Physical Location | 39-528 |
Classification
| Process Category | Deposition |
| Subcategory | CVD |
| Material Keywords | Silicon |
| Sample Size | 6" Wafers |
| Alternative | none |
| Keywords | multi wafer, load lock, top side of sample, conformal dep, vacuum, plasma, temperature, requires flat |
Description
The epi-Centura is an UHV chemical vapor deposition system that grows Si and SiGe epilayers. This tool is not open to public use.
| Best for | |
| Limitations | This tool is not open to public. |
| Characteristics/FOM | |
| Caution with | |
| Machine Charges | 32/run + 11/um |
Documents
Process Matrix Details
Permitted
Not Allowed
Ever been in EMLSamples from EML are never permitted to return to ICL or TRL
For more details or help, please consult PTC matrix, email ptc@mtl.mit.edu, or ask the research specialist (Gary Riggott)