Equipment
| Lab and Coral Name | EML / RTA-EML |
| Model | AG Associates Heatpulse 410 |
| Specialist | Kurt Broderick (Timothy Turner, Gary Riggott) |
| Physical Location | TBD |
Classification
| Process Category | Diffusion |
| Subcategory | Bake |
| Material Keywords | SiO2, SiNx, Dielectrics, CMOS Metals, Non-CMOS Metals, Non-Standard Materials |
| Sample Size | 4" Wafers, Pieces |
| Alternative | EML / anneal-furnace |
| Keywords | single wafer, manual load, multiple pieces, top side of sample, vacuum, temperature, manual operation |
Description
The RTA tool in EML allows for short anneals with fast temperature ramps in N2, O2, or N2/H2 ambients. Samples are manually placed on a 4" handle Si wafer. Sample temperature is indirectly measured by a TC connected to the handle wafer. Gas ambient is controlled manually by the user. Time and temperature parameter values are entered before each run.
| Best for | Annealing in controlled ambient |
| Limitations | Sample temperature varies by ~30C across the handle wafer. |
| Characteristics/FOM | Temperature range: 400-1100C (need to confirm max. possible temp.), time range: 0-300 seconds. |
| Caution with | Even after purging the chamber with only N2, the ambient will never be completely free of oxygen. |
| Machine Charges | 4/wafer |
Documents
SOP
| RTA in EML | SOP for the RTA |
Process Matrix Details
PTC Matrix does not apply for EML
Ever been in EMLSamples from EML are never permitted to return to ICL or TRL